• 제목/요약/키워드: Semiconductor detector

검색결과 192건 처리시간 0.026초

Analytic simulator and image generator of multiple-scattering Compton camera for prompt gamma ray imaging

  • Kim, Soo Mee
    • Biomedical Engineering Letters
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    • 제8권4호
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    • pp.383-392
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    • 2018
  • For prompt gamma ray imaging for biomedical applications and environmental radiation monitoring, we propose herein a multiple-scattering Compton camera (MSCC). MSCC consists of three or more semiconductor layers with good energy resolution, and has potential for simultaneous detection and differentiation of multiple radio-isotopes based on the measured energies, as well as three-dimensional (3D) imaging of the radio-isotope distribution. In this study, we developed an analytic simulator and a 3D image generator for a MSCC, including the physical models of the radiation source emission and detection processes that can be utilized for geometry and performance prediction prior to the construction of a real system. The analytic simulator for a MSCC records coincidence detections of successive interactions in multiple detector layers. In the successive interaction processes, the emission direction of the incident gamma ray, the scattering angle, and the changed traveling path after the Compton scattering interaction in each detector, were determined by a conical surface uniform random number generator (RNG), and by a Klein-Nishina RNG. The 3D image generator has two functions: the recovery of the initial source energy spectrum and the 3D spatial distribution of the source. We evaluated the analytic simulator and image generator with two different energetic point radiation sources (Cs-137 and Co-60) and with an MSCC comprising three detector layers. The recovered initial energies of the incident radiations were well differentiated from the generated MSCC events. Correspondingly, we could obtain a multi-tracer image that combined the two differentiated images. The developed analytic simulator in this study emulated the randomness of the detection process of a multiple-scattering Compton camera, including the inherent degradation factors of the detectors, such as the limited spatial and energy resolutions. The Doppler-broadening effect owing to the momentum distribution of electrons in Compton scattering was not considered in the detection process because most interested isotopes for biomedical and environmental applications have high energies that are less sensitive to Doppler broadening. The analytic simulator and image generator for MSCC can be utilized to determine the optimal geometrical parameters, such as the distances between detectors and detector size, thus affecting the imaging performance of the Compton camera prior to the development of a real system.

Characteristics of radiographic images acquired with CdTe, CCD and CMOS detectors in skull radiography

  • Queiroz, Polyane Mazucatto;Santaella, Gustavo Machado;Lopes, Sergio Lucio Pereira de Castro;Haiter-Neto, Francisco;Freitas, Deborah Queiroz
    • Imaging Science in Dentistry
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    • 제50권4호
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    • pp.339-346
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    • 2020
  • Purpose: The purpose of this study was to evaluate the image quality, diagnostic efficacy, and radiation dose associated with the use of a cadmium telluride (CdTe) detector, compared to charge-coupled device (CCD) and complementary metal oxide semiconductor(CMOS) detectors. Materials and Methods: Lateral cephalographs of a phantom (type 1) composed of synthetic polymer filled with water and another phantom (type 2) composed of human skull macerated with polymer coating were obtained with CdTe, CCD, and CMOS detectors. Dosimeters placed on the type 2 phantom were used to measure radiation. Noise levels from each image were also measured. McNamara cephalometric analysis was conducted, the dentoskeletal configurations were assessed, and a subjective evaluation of image quality was conducted. Parametric data were compared via 1-way analysis of variance with the Tukey post-hoc test, with a significance level of 5%. Subjective image quality and dentoskeletal configuration were described qualitatively. Results: A statistically significant difference was found among the images obtained with the 3 detectors(P<0.05), with the lowest noise level observed among the images obtained with the CdTe detector and a higher subjective preference demonstrated for those images. For the cephalometric analyses, no significant difference (P>0.05) was observed, and perfect agreement was seen with regard to the classifications obtained from the images acquired using the 3 detectors. The radiation dose associated with the CMOS detector was higher than the doses associated with the CCD (P<0.05) and CdTe detectors(P<0.05). Conclusion: Considering the evaluated parameters, the CdTe detector is recommended for use in clinical practice.

짧은 펄스로 구동되는 반도체 발광소자의 파장측정에 관한 연구 (A Study on the Measurement of Spectral Characteristics of Semiconductor Light Sources driven by Very Short Pulse Currents)

  • 김경식;김재창;조호성;홍창희
    • 한국광학회지
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    • 제1권2호
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    • pp.198-203
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    • 1990
  • 본 논문에서는 매우 짧은 전류펄스에 의해 구동되는 반도체 발광소자의 파장특성을 측정하기 위한 장치를 고안하였다. 이 장치는 600grooves/mm의 회절격자에 초점거리가 275mm인 분광기와 X-Y recorder 그리고 아날로그 분석을 위한 scanning motor와 최대값 검출기가 결합된 증폭기로 구성하였다. 특히, 최대값 검출기는 짧은 펄스 신호를 연속적인 값으로 변환하기 위하여 사용되었다. 이 장치를 이용하여 상용화된 발광다이오드와 AlGaAs/GaAs LD 및 InGaAsP/InP BH-LD를 duty cycle이 0.01인 전류펄스로 구동하면서 그 파장특성을 분석한 결과 약 1$\AA$ 정도의 분해능과 10$\mu$W 정도의 수신감도를 감지는 것을 확인하였다.

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중성자선과 감마선 동시측정이 가능한 휴대용 계측시스템 개발에 관한 연구 (Development of a Portable Detection System for Simultaneous Measurements of Neutrons and Gamma Rays)

  • 김희경;홍용호;정영석;김재현;박수연
    • 대한방사선기술학회지:방사선기술과학
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    • 제43권6호
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    • pp.481-487
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    • 2020
  • Radiation measurement technology has steadily improved and its usage is expanding in various industries such as nuclear medicine, security search, satellite, nondestructive testing, environmental industries and the domain of nuclear power plants (NPPs). Especially, the simultaneous measurements of gamma rays and neutrons can be even more critical for nuclear safety management of spent nuclear fuel and monitoring of the nuclear material. A semiconductor detector comprising cadmium, zinc, and tellurium (CZT) enables to detect gamma-rays due to the significant atomic weight of the elements via immediate neutron and gamma-ray detection. Semiconductor sensors might be used for nuclear safety management by monitoring nuclear materials and spent nuclear fuel with high spatial resolution as well as providing real-time measurements. We aim to introduce a portable nuclide-analysis device that enables the simultaneous measurements of neutrons and gamma rays using a CZT sensor. The detector has a high density and wide energy band gap, and thus exhibits highly sensitive physical characteristics and characteristics are required for performing neutron and gamma-ray detection. Portable nuclide-analysis device is used on NPP-decommissioning sites or the purpose of nuclear nonproliferation, it will rapidly detect the nuclear material and provide radioactive-material information. Eventually, portable nuclide-analysis device can reduce measurement time and economic costs by providing a basis for rational decision making.

직독식 측정기 PID와 능동식 시료채취기에 의한 GC-FID 정량분석법의 VOCs 농도 비교 연구 (Comparative Analysis between Direct-reading Meter of PID and GC-FID using the Active Type Air Sampler for VOCs Measurement)

  • 여진희;최광민
    • 한국산업보건학회지
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    • 제26권3호
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    • pp.301-306
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    • 2016
  • Objectives: Direct-reading instrument(Photoionization detectors, PID) and quantitative analysis using active type air sampling (Gas chromatography-flame ionization detector, GC-FID) were tested to evaluate their ability to detect volatile organic compounds(VOCs) in a semiconductor manufacturing plant. Methods: The organic compounds used were acetone and ethanol which are normally used as cleaning solutions in the semiconductor manufacturing. The evaluation was based on the preparation of test solutions of known acetone and ethanol concentration in a chamber($600{\times}600{\times}1150mm$). Samples were prepared that would be equivalent to 5~100 ppm for acetone and 10~ 200 ppm ethanol. GC-FID and PID were evaluated simultaneously. Quantitative analysis was performed after sampling and the direct-reading instrument was checked using real-time data logging. Results: Positive correlations between PID and GC-FID were found for acetone and ethanol at 0.04~2.4% for acetone(TLV: 500 ppm) and 0.1~8.3% for ethanol(TLV: 1000 ppm). When the sampling time was 15 min, concentration of test solution was the most similar between measurement methods. However, the longer the sampling time, the less similar the results. PID and GC-FID had similar exposure patterns. Conclusions: The results indicate that PID and GC-FID have similar exposure pattern and positive correlation for detection of acetone and ethanol. Therefore, PID can be used for exposure monitoring for VOCs in the semiconductor manufacturing industry. This study has significance in that it validates measuring occupational exposure using a portable device.

Pt/AIGaN 쇼트키 다이오드의 수광특성 모델링 (Modeling for UV Photo-detector with Pt/AIGaN Schottky diode)

  • 김종환;이헌복;박성종;이정희;함성호
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.605-608
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    • 2004
  • A $Pt/Al_xGa_{l-x}N$ Schottky type Ultra-violet photodetector was modeled and simulated using the commercial SILVACO software program. In the carrier transport, we applied field model and other analytic model to determine the electron saturation velocity and low field mobility for GaN and $Al_xGa_{l-x}N$. A C-Interpreter function was defined to described the mole-fraction for the ternary compound semiconductor such as $Al_xGa_{l-x}N$. As comparing the simulated and experimental results, we found that the simulated result for type-1 has $15.9 nA/cm^2$ of leakage current at 5V. We confirmed a good agreement of photo-current in the UV Photo-detector, while applying the absorption coefficient and reflective index of active $Al_xGa_{l-x}N$ and other layers. There had been an intensive search for the proper refractive indices of the layers.

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리플전압을 이용한 병렬아크 사고 감지기 개발 (Development of Parallel Arc Fault Detector Using Ripple Voltage)

  • 최정규;곽동걸
    • 전력전자학회논문지
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    • 제21권5호
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    • pp.453-456
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    • 2016
  • The major causes of electrical fire in low-voltage distribution lines are classified into short-circuit fault, overload fault, electric leakage, and electric contact failure. The special principal factor of the fire is electric arc or spark accompanied with such electric faults. This paper studies the development of an electric fire prevention system with detection and alarm of that in case of parallel arc fault occurrence in low-voltage distribution lines. The proposed system is designed on algorithm sensing the instantaneous voltage drop of line voltage at arc fault occurrence. The proposed detector has characteristics of high-speed operation responsibility and superior system reliability from composition using a large number of semiconductor devices. A new sensing control method that shows the detection of parallel arc fault is sensed to ripple voltage drop through a diode bridge full-wave rectifier at electrical accident occurrence. Some experimental tests of the proposed system also confirm the practicality and validity of the analytical results.

NEW DEVELOPED PORTABLE NEAR INFRARED (NIR) SYSTEM USING MICROSPECTROMETER

  • Woo, Young-Ah;Ha, Tae-Kyu;Kim, Jae-Min;Kim, Hyo-Jin
    • 한국근적외분광분석학회:학술대회논문집
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    • 한국근적외분광분석학회 2001년도 NIR-2001
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    • pp.1123-1123
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    • 2001
  • In recent years, a miniature spectrometer has been extensively developed due to the marriage of fiber optics and semiconductor detector array. This type of miniature spectrometer has advantages of low price and robustness due to the capability of mass production and no moving parts are required such as lenses, mirrors and scanning monochromator. These systems are ideal for use in teaching labs, process monitoring and field analyses. A portable near infrared (NIR) system has been developed for qualitative and quantitative analysis. This system includes a tungsten halogen lamp for light source, a fiber optics connected a light source, and a sample module to the microspectrometer, The size of spectrometer can be as small as 2.5 cm x 1.5 cm x 0.1 cm. Wavelength ranges can be chosen as 360-800 nm, 800-1100 nm and 1100-1900 nm depending on the type of detector. The software consists of various tools for multivariate analysis and pattern recognition techniques. To evaluate the system, long and short-term stability, wavelength accuracy, and stray light have been investigated and compared with conventional scanning type NIR spectrometer. This developed system can be sufficiently used for quantitative and qualitative analysis for various samples such as agricultural product, herbal medicine, food, petroleum, and pharmaceuticals, etc.

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A Clock and Data Recovery Circuit with Adaptive Loop Bandwidth Calibration and Idle Power Saved Frequency Acquisition

  • Lee, Won-Young;Jung, Chae Young;Cho, Ara
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권4호
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    • pp.568-576
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    • 2017
  • This paper presents a clock and data recovery circuit with an adaptive loop bandwidth calibration scheme and the idle power saved frequency acquisition. The loop bandwidth calibration adaptively controls injection currents of the main loop with a trimmable bandgap reference circuit and trains the VCO to operate in the linear frequency control range. For stand-by power reduction of the phase detector, a clock gating circuit blocks 8-phase clock signals from the VCO and cuts off the current paths of current mode D-flip flops and latches during the frequency acquisition. 77.96% reduction has been accomplished in idle power consumption of the phase detector. In the jitter experiment, the proposed scheme reduces the jitter tolerance variation from 0.45-UI to 0.2-UI at 1-MHz as compared with the conventional circuit.

A 0.12GHz-1.4GHz DLL-based Clock Generator with a Multiplied 4-phase Clock Using a 0.18um CMOS Process

  • Chi, Hyung-Joon;Lee, Jae-Seung;Sim, Jae-Yoon;Park, Hong-June
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권4호
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    • pp.264-269
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    • 2006
  • A $0.12GHz{\sim}1.4GHz$ DLL-based clock generator with the capability of multiplied four phase clock generation was designed using a 0.18um CMOS process. An adaptive bandwidth DLL with a regulated supply delay line was used for a multiphase clock generation and a low jitter. An extra phase detector (PD) in a reference DLL solves the problem of the initial VCDL delay and achieves a fast lock time. Twice multiplied four phase clocks were generated at the outputs of four edge combiners, where the timing alignment was achieved using a coarse lock signal and the 10 multiphase clocks with T/8 time difference. Those four clocks were combined one more time using a static XOR circuit. Therefore the four times multiplication was achieved. With a 1.8V supply, the rms jitter of 2.1ps and the peak-to-peak jitter of 14.4ps were measured at 1.25GHz output. The operating range is $0.12GHz{\sim}1.4GHz$. It consumes 57mW and occupies 450*325um2 of die area.