• 반도체디스플레이기술학회지
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• 제22권2호
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• pp.56-63
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• 2023

This paper presents a method using finite element analysis and topology optimization to address the issue of overdesign in pressure-explosion proof enclosure doors for semiconductor manufacturing processes. The design conducted in this paper focuses on the pattern design of the enclosure door and its fixation components. The process consists of a solid-filled model, a topology optimization model, and a post-processing model. By applying environmental conditions to each model and comparing the maximum displacement, maximum equivalent stress, and weight values, it was confirmed that a reduction of about 13% in weight is achievable.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2021년도 추계학술발표대회
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• pp.290-292
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• 2021

양자 컴퓨터 기술의 발전에 따라 현재 사용되고 있는 암호 알고리즘과 시스템들이 위협받고 있다. 이러한 시대적 흐름에 따라 양자 컴퓨터로도 쉽게 해결할 수 없는 양자내성암호의 개발이 요구되고 있으며, 미국 NIST 에서는 양자내성암호의 표준화를 위한 공모전을 진행하고 있다. 본 논문에서는 공모전 최종 후보 중 하나인 NTRU 알고리즘을 가속화하기 위한 성능 분석을 진행하였다.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2023년도 춘계학술발표대회
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• pp.212-214
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• 2023

동형암호는 주목받는 차세대 프라이버시 보존 기술이다. 많은 기업들이 이를 활용한 서비스들을 제공하고 있다. 비록 동형암호가 수학적으로 안전성을 인정받았지만, 실행되는 프로그램으로써 동형암호는 부채널공격들에 취약하다는 연구 결과들이 보고되고 있다. 이 논문은 이런 부채널공격들에 대해 본석, 일반화하여 사용 가능한 gadget을 소개하며, 대응기법에 대한 가이드라인을 제안하고 그 효과와 한계에 대해 분석한다.

• 한국분말재료학회지
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• 제19권6호
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• pp.451-457
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• 2012

Nowadays, research and development on quantum dot have been intensively and comprehensively pursued worldwide in proportion to concurrent breakthrough in the field of nanotechnology. At present, quantum dot technology forms the main interdisciplinary basis of energy, biological and photoelectric devices. More specifically, quantum dot semiconductor is quite noteworthy for its sub-micro size and possibility of photonic frequency modulation capability by controlling its size, which has not been possible with conventionally fabricated bulk or thin film devices. This could lead to realization of novel high performance devices. To further understand related background knowledge of semiconductor quantum dot at somewhat extensive level, a review paper is presently drafted to introduce basics of (semiconductor) quantum dot, its properties, applications, and present and future market trend and prospect.

• 한국항행학회논문지
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• 제13권3호
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• pp.412-418
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• 2009

본 논문에서는 노치형 웨이퍼 20~25개를 일련번호가 같은 위치에 자동으로 정렬이 되도록 하여 반도체 공정 전, 후 감지기에 의해 웨이퍼의 공정상태 파악을 용이하게 하는 시스템 개발 및 정확하게 노치를 정렬하는 보정 알고리즘, 스테핑 모터 제어 알고리즘을 제안하였다. 웨이퍼 회전 시 표면 재질이 적당한 마찰 계수를 가지며 웨이퍼의 회전으로 파티클(Particle)이 발생하지 않는 소재를 사용하여 발생을 최소화 시킬 수 있었다. 또한 미끄럼 방지를 위한 기구설계 기술을 개발하였고, 수학적 검증을 통한 성능평가를 실시하였다. 본 연구 개발 시스템은 반도체 공정 진행 중 웨이퍼의 오염 방지로 반도체 수율을 향상 시킬 수 있으며, 향후 450mm 이상의 대형 웨이퍼 생성 시에도 탄력적으로 적용 할 수 있다.

• Corrosion Science and Technology
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• 제2권1호
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• pp.7-11
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• 2003

Photoelectrochemical response and electrochemical impedance behavior was investigated for passive film formed on sputter-deposited Cr alloy in $0.1kmol{\cdot}m^{-3}$. Photoelectrochemical action spectrum could be separated into two components, which were considered to be derived from $Cr_2O_3$ ($E_g\sim3.6eV$) and $ Cr(OH)_3 $ ($E_g\sim2.5eV$). The band gap energy, $E_g$, of each component was almost constant for various applied potentials. polarization periods and alloying additives. The photoelectrochemical response showed negative photo current for most potentials in the passive region. Therefore, the photo current apparently exhibited p-typesemiconductor behavior. On the other hand, Mort-Schottky plot of the capacitance showed positive slope, which means that passive film formed on Cr alloy has n-type semiconductor property. These apparently conflicting results are rationally explained assuming that the passive film on Cr alloy formed in the acid solution has n-type semiconductor property with a fairly deep donor level in the band gap and forms an accumulation layer in the most of potential region in the passive state.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.85-91
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• 2012

In this paper, the large data processing and suitable FAT32 file system for industrial system using a PLC and CF memory was implemented. Most of PLC can't save the large data in user data memory. So it's required to the external devices of CF memory or NAND flash memory. The CF memory is used in order to save the large data of PLC system. The file system using the CF memory is NTFS, FAT, and FAT32 system to configure in various ways. Typically, the file system which is widely used in industrial data storage has been implemented as modified FAT32. The conventional FAT 32 file system was not possible for multiple writing and high speed data accessing. The proposed file system was implemented by the large data processing module can be handled that the files are copied at the 40 bytes for 1msec speed logging and creating 8 files at the same time. In a sudden power failure, high reliability was obtained that the problem was solved using a power fail monitor and the non-volatile random-access memory (NVSRAM). The implemented large data processing system was applied the modified file system as FAT32 and the good performance and high reliability was showed.

• 한국표면공학회지
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• 제57권2호
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• pp.71-85
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• 2024

This article provides an overview of Raman spectroscopy and its practical applications for surface analysis of semiconductor processes including real-time monitoring. Raman spectroscopy is a technique that uses the inelastic scattering of light to provide information on molecular structure and vibrations. Since its inception in 1928, Raman spectroscopy has undergone continuous development, and with the advent of SERS(Surface Enhanced Raman Spectroscopy), TERS(Tip Enhanced Raman Spectroscopy), and confocal Raman spectroscopy, it has proven to be highly advantageous in nano-scale analysis due to its high resolution, high sensitivity, and non-destructive nature. In the field of semiconductor processing, Raman spectroscopy is particularly useful for substrate stress and interface characterization, quality analysis of thin films, elucidation of etching process mechanisms, and detection of residues.

• Journal of Semiconductor Engineering
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• 제1권2호
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• pp.64-73
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• 2020

As CMOS technology scales down, the design of analog signal processing circuit becomes far more difficult because of steadily decreasing supply voltage and smaller intrinsic gain of transistors. With sub-1V supply voltage, the conventional analog signal processing relying on high-gain amplifiers is not an effective solution and different approach has to be sought. One of the promising approaches is "time-domain analog signal processing" which exploits the improving switching speed of transistors in a scaled CMOS technology. In this paper, various time-domain analog signal processing techniques are explained with some experimental results.

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2000년도 추계학술발표대회 논문개요집
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• pp.0-0
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• 2000