Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Surface analysis using Raman spectroscopy during semiconductor processing

라만 분광법을 이용한 반도체 공정 중 표면 분석

  • Tae Min Choi (School of Integrative Engineering, Chung-Ang University) ;
  • JinUk Yoo (School of Integrative Engineering, Chung-Ang University) ;
  • Eun Su Jung (School of Integrative Engineering, Chung-Ang University) ;
  • Chae Yeon Lee (School of Integrative Engineering, Chung-Ang University) ;
  • Hwa Rim Lee (School of Integrative Engineering, Chung-Ang University) ;
  • Dong Hyun Kim (School of Integrative Engineering, Chung-Ang University) ;
  • Sung Gyu Pyo (School of Integrative Engineering, Chung-Ang University)
  • 최태민 (중앙대학교 융합공학부) ;
  • 유진욱 (중앙대학교 융합공학부) ;
  • 정은수 (중앙대학교 융합공학부) ;
  • 이채연 (중앙대학교 융합공학부) ;
  • 이화림 (중앙대학교 융합공학부) ;
  • 김동현 (중앙대학교 융합공학부) ;
  • 표성규 (중앙대학교 융합공학부)
  • Received : 2024.04.15
  • Accepted : 2024.04.22
  • Published : 2024.04.30
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Abstract

This article provides an overview of Raman spectroscopy and its practical applications for surface analysis of semiconductor processes including real-time monitoring. Raman spectroscopy is a technique that uses the inelastic scattering of light to provide information on molecular structure and vibrations. Since its inception in 1928, Raman spectroscopy has undergone continuous development, and with the advent of SERS(Surface Enhanced Raman Spectroscopy), TERS(Tip Enhanced Raman Spectroscopy), and confocal Raman spectroscopy, it has proven to be highly advantageous in nano-scale analysis due to its high resolution, high sensitivity, and non-destructive nature. In the field of semiconductor processing, Raman spectroscopy is particularly useful for substrate stress and interface characterization, quality analysis of thin films, elucidation of etching process mechanisms, and detection of residues.

Keywords

References

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