• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.34-35
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• 2006

Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode, $HfO_2$ as a gate insulator. GZO and $HfO_2$ layers are prepared by using a pulsed laser deposition and intrinsic ZnO layers are fabricated by using an rf-magnetron sputtering, respectively. The transparent TFT is highly transparent (> 87 %) and exhibits n-channel, enhancement mode behavior with a field-effect mobility as large as $11.7\;cm^2/Vs$ and a drain current on-to-off ratio of about $10^5$.

• The Journal of Natural Sciences
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• v.7
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• pp.11-17
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• 1995

The optical nonlinear refractive index of $Bil_3$ semiconductor microcluster colloid has been measured by the Z-scan method with circular symmetric beam. The value of nonlinear refractive index was -1.53 x $10^12($cm^2/W) at $0.532\mum$and the nonlinearities were mainly due to thermal effect induced by 20 ns laser pulse. And the absorption coefficient was measured to be -$10^8$(cm/W)

• ETRI Journal
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• v.38 no.1
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• pp.9-17
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• 2016

We demonstrate a time- and wavelength-division multiplexed passive optical network system employing a vertical-cavity surface-emitting laser array-based optical line terminal transceiver and a tunable bidirectional optical subassembly-based optical network terminal transceiver. A packet error-free operation is achieved after a 40 km single-mode fiber bidirectional transmission. We also discuss an arrayed waveguide grating, a photo detector array based on complementary metal-oxide-semiconductor photonics technologies, and low-cost key devices for deployment in access networks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.56-61
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• 1999

Highly conductive oxide films of BaRuO$_3$ have been grown heteroepitaxially on (100) LaAlO$_3$ single crystalline substrates by using pulsed laser deposition. The films are c-axis oriented with an in-plane epitaxial relationship of <010><100>BaRuO$_3$ // <110>LaAlO$_3$. Atomic force microscopy (AFM) observation shows that they consist of a fine-arranged network of grains and have a mosaic microstructure. Generally temperature-dependent resistivity shows the transition from metallic curve to semiconductor-metallic twofold curve by the deposition conditions for Ru oxide based materials like SrRuO$_3$, CaRuO$_3$, BaRuO$_3$, etc.. This twofold curve comes from the structural similarity of Ru oxide based materials including BaRuO$_3$. We find that the distance of Ru-Ru bonding in the unit cell of BaRuO$_3$ as well as the grain boundary scattering could be the two important causes of these interesting conductive properties.

• Korean Journal of Optics and Photonics
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• v.3 no.2
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• pp.123-132
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• 1992

We designed and constructed the Cs beam tube which consists of a Ramsey cavity, four C-field rods, fluorescence detecting systems, and etc. for developing an optically pumped Cs atomic clock. A semiconductor laser was used for optical pumping and probing in the Cs beam. We observed Ramsey resonance signal by detecting the fluorescence signal in the probing region as the microwave frequency injected into the Ramsey cavity was scanned near 9192.6 MHz which corresponds to the "clock transition" of Cs atoms. We found that the linewidth of the Ramsey signal was 200 Hz, the magnetic field intensity was $8.61\muT$ when the current of 0.8A flowed in the C-field rods, and the second order Zeeman shift by the magnetic field was 3.17 Hz.s 3.17 Hz.

• Fire Science and Engineering
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• v.32 no.3
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• pp.134-139
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• 2018

Extremely fine particles seriously affect people and are becoming a social problem. Conventional methods using the type of beta ray absorption are difficult to have real-time measurements and miniaturization for the acquisition of fine dust. In this paper, a light scattering method was used. The sensors were configured internally with semiconductor laser diodes for miniaturization, low cost and lightweight. The use of the FFT method makes it easier to separate fine dust according to size compared to conventional light scattering sensors. Bluetooth communication also allows the connection, monitoring and control of devices using smart phones.

• Journal of the Korean Society for Precision Engineering
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• v.11 no.1
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• pp.150-156
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• 1994

To meet the process requirement of semiconductor device manufacturing, it is necessary to improve the alignment accuracy in exposure equipments. We developed the excimer laser stepper and will describe the methodology for alignment measurement and experimental results. Our wafer alignment system consists of off-axis optics, TTL(Through The Lens) optics and high precision stage. Off-axis alignment utilizes the image processing and /or diffraction from thealign marks of off-centered chip area. On the other hand, TTL alignment can be used for the die-by-die alignment using dual beam interferometry. When only off-axis alignment was used, the experimental alignment error(lml+3 .sigma. ) was 0.26-0.29 .mu. m, and will be reduced down to 0.15 .mu. m by adding TTL alignment.

• Progress in Medical Physics
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• v.25 no.2
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• pp.116-121
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• 2014

Next future, The bio technology will be a rapidly developing. This paper is the scattering beam measurement of the red blood cell (RBC) and the fabrication of the micro cell biochip using the bio micro electro mechanical system (Bio-MEMS) process technology. The Major process method of Bio-MEMS technology was used the buffered oxide etchant (BOE), electro chemical discharge (ECD) and ultraviolet sensitive adhesives (UVSA). All experiments were the 10 times according to the process conditions. The experiment and research are required the ultraviolet expose, the micro fluid current, the cell control and the measurement of the output voltage Vpp (peak to peak) waveform by scattering angles. The transmitting and receiving of the laser beam was used the single mode optical fiber. The principles of the optical properties are as follows. The red blood cells were injected into the micro channel. The single mode optical fiber was inserting in the guide channel. The He-Ne laser beam was focusing in the single mode optical fiber. The transmission He-Ne laser beam is irradiating to the red blood cells. The manufactured guide channel consists of the four inputs and the four outputs. The red blood cell was allowed with the cylinder pump. The output voltage Vpp waveform of the scattering beam was measured with a photo detector. The receiving angle of the output optical fiber is $0^{\circ}$, $5^{\circ}$, $10^{\circ}$, $15^{\circ}$. The magnitude of the output voltage Vpp waveform was measured in the decrease according to increase of the reception angles. The difference of the output voltage Vpp waveform is due differences of the light transmittance of the red blood cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.191-194
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• 2000

In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as a pumping beam and a semiconductor laser at 780nm as a probing beam. The PB for the variable thickness of thin films was investigated. The thickness of the thin films is about $0.4{\mu}m$, $0.92{\mu}m$, $1.4{\mu}m$, $2.0{\mu}m$, respectively. The experimental result of PB in chalcogenide thin films was represented higher PB in the thickness of thin film, $0.92{\mu}m$. It was meant to represent higher PB in the thickness of the film that was made closely the optimal thickness, $0.96{\mu}m$. The optimal thickness of thin film, $0.96{\mu}m$ was calculated by the penetration depth of the pumping light Also, the PB in thickness of $0.92{\mu}m$ was obtained almost two times higher 0.15 than other thickness of thin films.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.264-272
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• 2012

In this paper, we report THz generation and detection characteristics investigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5~2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 ${\mu}m$) antenna, and the cutoff frequency was ~2 THz.