Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2006.10a
- /
- Pages.34-35
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- 2006
Transparent ZnO thin film transistor with long channel length of 1mm
1mm의 채널을 갖는 ZnO 투명 박막 트랜지스터
- Lee, Choong-Hee (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Ahn, Byung-Du (Department of Electrical and Electronic Engineering, Yonsei University) ;
-
Oh, Sang-Hoon
(Department of Electrical and Electronic Engineering, Yonsei University) ;
- Kim, Gun-Hee (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Lee, Sang-Yeol (Department of Electrical and Electronic Engineering, Yonsei University)
- 이충희 (연세대학교 전기전자공학과) ;
- 안병두 (연세대학교 전기전자공학과) ;
-
오상훈
(연세대학교 전기전자공학과) ;
- 김건희 (연세대학교 전기전자공학과) ;
- 이상렬 (연세대학교 전기전자공학과)
- Published : 2006.10.27
Abstract
Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode,
Keywords