• Design & Manufacturing
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• v.13 no.4
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• pp.10-16
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• 2019

Semiconductor chip is bonded to the substrate by melting solder bumps. In general, the chip bonding is applied by a Reflow process or a Thermo-Compression(TC) bonding process. In this paper, we introduce a Laser Assisted Thermo-Compression bonding (LATCB) process to improve the anxiety of the existing process(Reflow, TC bonding). In the LATCB process, the chip is bonded to the substrate by irradiating a laser with a uniform energy density in the same area as the chip to melt only the solder bumps and press the chip with a Transparent Compression Module (TCM). The TCM consists of a fused silica header for penetrating the laser and pressurizing the chip, and a piezoelectric actuator (P.A.) coupled to both ends of the header for micro displacement control of the header. In addition, TCM is a structure that can pressurize the chip and deliver it to the chip and solder bumps without losing the energy of the laser. Fused silica, which is brittle, is vulnerable to deformation, so the header may be damaged when an external force is applied for pressurization or a displacement differenced is caused by piezoelectric actuators at both ends. On the other hand, in order to avoid interference between the header and the adjacent chip when pressing the chip using the TCM, the header has a notch at the bottom, and breakage due to stress concentration of the notch is expected. In this study, the thickness and notch length that the header does not break when the external force (500 N) is applied to both ends of the header are optimized using structural analysis and Coulomb-Mohr failure theory. In addition, the maximum displacement difference of the P.A.s at both ends where no break occurred in the header was derived. As a result, the thickness of the header is 11 mm, and the maximum displacement difference between both ends is 8 um.

• Korean Chemical Engineering Research
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• v.52 no.6
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• pp.750-754
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• 2014

Quantitative risk analysis has been performed for a pervaporation process for production of high test peroxide. Potential main accidents are explosion and fire caused by a decomposition reaction. As the target process has a laboratory scale, the consequence is considered to belong to Category 3. An event tree has been developed as a model for occurrence of a decomposition reaction in the target process. The probability functions of the accident causes have been established based on the frequency data of similar events. Using the constructed model, the failure rate has been calculated. The result indicates that additional safety devices are required in order to achieve an acceptable risk level, i.e. an accident frequency less than $10^{-4}/yr$. Therefore, a layer of protection analysis has been applied. As a result, it is suggested to introduce inherently safer design to avoid catalytic reaction, a safety instrumented function to prevent overheating, and a relief system that prevents explosion even if a decomposition reaction occurs. The proposed method is expected to contribute to developing safety management systems for various chemical processes including concentration of hydrogen peroxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.59-59
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• 2009

현재 CMP분야는 광역 평탄화 반도체 소자의 집적화 및 소형화가 진행됨에 따라서 CMP 공정의 중요성은 날로 성장하고 있다. 하지만 이러한 CMP공정은 불가피하게도 scratch, pit, CMP residue와 같은 defect들을 발생시키고 있으며, 점점 선폭이 작아짐에 따라, 이러한 defect들이 반도체 수율에 미치는 영향은 심각해지고 있다. Defect들 중에 특히 scratch는 반도체에 치명적인 circuit failure를 일으키게 된다. 또한 반도체 내구성과 신뢰성을 감소시키게 되고, 누전전류를 증가시키는 등 바람직하지 못한 현상들이 생기게 된다. 본 연구에서는 scratch 와 같은 deflect들을 효율적으로 검출, 분석하고, scratch를 감소시키는데 그 목적이 있다. 본 실험을 위해 8" TEOS wafer와 commercial oxide slurry 및 friction polisher (Poli-500, G&P tech., Korea)를 사용하여 CMP 공정을 진행하였으며, CMP 공정조건은 각각 80rpm/80rpm/1psi(Platen speed/Head speed/Pressure)에서 1분 동안 연마를 한 후 scratch 발생 경향을 살펴보았다. CMP 후 wafer위에 오염되어 있는 slurry residue들을 제거하기 위해 SC-1, HF 세정을 이용하여 최적화된 post-CMP 공정기술을 제안하였다. Scratch 검출 및 분석을 위해 wafer surface analyzer (Surfscan 6200, Tencor, USA)와 optical microscope (LV100D, Nicon, Japan)를 사용하였다. CMP 공정 변수들에 따른 scratch 발생정도를 비교하였으며, scratch 발생 요인들에 따른 scratch 형태 및 발생정도를 살펴보았다. 최적화된 post-CMP 세정 조건은 메가소닉과 함께 SC-1 세정을 실시하여 slurry residue들을 제거한 후, HF 세정을 실시하여 잔여 오염물들을 제거하고 검출이 용이하도록 scratch를 확장시킬 수 있도록 제안하였으며, 100%의 particle removal efficiency (PRE)를 얻을 수 있었다. 실제 CMP 공정후 post-CMP 세정 단계별 scratch 개수를 측정한 결과, SC-1 세정 후 약 220개의 scratch가 검출되었으며, 검출되지 않았던 scratch가 HF 세정 후 확장되어 드러남에 따라 약 500개의 scratch 가 검출되었다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.143-146
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• 2005

Many data mining techniques have been proved useful in revealing important patterns from large data sets. Especially, data mining techniques play an important role in a customer data analysis in a financial industry and an electronic commerce. Also, there are many data mining related research papers in a semiconductor industry and an automotive industry. In addition, data mining techniques are applied to the bioinformatics area. To satisfy customers' various requirements, each industry should develop new processes with more accurate production criteria. Also, they spend more money to guarantee their products' quality. In this manner, we apply data mining techniques to the production-related data such as a test data, a field claim data, and POP (point of production) data in the automotive parts industry. Data collection and transformation techniques should be applied to enhance the analysis results. Also, we classify various types of manufacturing processes and proposed an analysis scheme according to the type of manufacturing process. As a result, we could find inter- or intra-process relationships and critical features to monitor the current status of the each process. Finally, it helps an industry to raise their profit and reduce their failure cost.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.1
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• pp.11-18
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• 2001

Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

• Journal of the Korean Society of Safety
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• v.32 no.6
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• pp.29-33
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• 2017

In order to solve this sort of electrostatic failure in Display and Semiconductor process, Soft X-ray ionizer is mainly used. Soft X-ray Ionizer does not only generate electrical noise and minute particle but also is efficient to remove electrostatic as it has a wide range of ionization. There exist variable factors such as type of tungsten thickness deposited on target, Anode voltage etc., and it takes a lot of time and financial resource to find optimal performance by manufacturing with actual X-ray tube source. Here, MCNPX (Monte Carlo N-Particle Extended) is used for simulation to solve this kind of problem, and optimum efficiency of X-ray generation is anticipated. In this study, X-ray generation efficiency was compared according to target material thickness using MCNPX and actual X-ray tube source under the conditions that tube voltage is 5 keV, 10 keV, 15 keV and the target Material is Tungsten(W). At the result, In Tube voltage 5 keV and distance 100 mm, optimal target thickness is $0.05{\mu}m$ and fastest decay time appears + decay time 0.28 sec. - deacy time 0.30 sec. In Tube voltage 10keV and distance 100 mm, optimal target Thickness is $0.16{\mu}m$ and fastest decay time appears + decay time 0.13 sec. - deacy time 0.12 sec. In the tube voltage 15 keV and distance 100 mm, optimal target Thickness is $0.28{\mu}m$ and fastest decay time appears + decay time 0.04 sec. - deacy time 0.05 sec.

• Fire Science and Engineering
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• v.20 no.1 s.61
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• pp.71-76
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• 2006

The major causes of electrical fire are classified to short circuit fault, overload fault, electric leakage and electric contact failure. The occurrence factor of the fire is electric arc or spark accompanied with electrical faults. Residual Current Protective Device(RCD) of high sensitivity type used at low voltage wiring cuts off earth leakage and overload, but the RCD can't cut off electric arc or spark to be a major factor of electrical fire. As the RCDs which are applied low voltage distribution panel are prescribed to rated breaking time about 30[ms](KS C 4613), the RCDs can't perceive to the periodic electric arc or spark of more short wavelength level. To be improved on such problem, this paper is proposed to a auxiliary control apparatus for RCD trip on electric arc or spark due to electrical fire. Some experimental results of the proposed apparatus is confirmed to the validity of the analytical results.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.120-120
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• 2018

반도체 소자나 디스플레이 패널 제조 공정에 가장 많이 사용되는 진공 펌프인 터보 분자 펌프는 오일을 사용하지 않고, 설치 방향이 자유로우며 넓은 작동 압력 영역을 가지고 있어서 고가임에도 불구하고 점점 더 사용 영역을 넓혀 가고 있다. 상하의 두 곳에 회전축을 지지하는 베어링이 필요한데, 기계식 금속 베어링을 채용하는 경우에는 반드시 윤활유를 공급해 주어야 하고, 고온, 부식성 또는 산화성 가스의 배기 시에는 퍼지 가스로 비활성인 질소나 알곤등을 이용하여 보호를 해주어야 한다. 반면, 자기 베어링을 채택한 모델은 윤활의 걱정에서 자유로울 수 있기 때문에 채용이 늘어나고 있다. 동일극의 반발력이나 반대극의 인상력을 이용한 구조를 갖게 되는데 갑작스러운 입구 쪽 압력의 증가 시에는 자석 끼리 부딪치는 일이 발생하고 이로 인해서 로터 모듈 전체에 큰 손상을 갖게 되므로 한 곳 정도에 비상용 터치 다운 베어링을 기계식으로 윤활제 없이 설치하기도 한다. 기본적으로 자기 베어링 방식은 로터 모듈의 부상과 제어를 위해서 3축 또는 5축 제어를 하게 되는데 여기에는 전자석의 전류를 미세하게 조정하여 피드백 하는 시스템을 활용하기 때문에 외부에서의 자기장이 일정값 이상 침투하게 되면 제어 회로의 기능에 문제를 일으키게 된다. 또한 축 방향에 수직인 자기장의 강도가 높아지면 고속으로 회전하는 금속 블레이드가 자속을 자르게 되므로 표면에 와전류가 발생하여 문제가 된다. 터보 분자 펌프는 회전자와 고정자 간격이 1 mm 이내로 작아서 약간의 진동이라도 발생하면 회전자와 고정자 간에 충돌이 일어나고 이는 곧 파손으로 이어진다. 그림 1에는 파손 원인 분석을 위한 회전자 모듈의 수치 해석용 모델의 일부를 나타내었고, 그림 2에는 실제로 외부 자기장에 의한 파손이 발생한 사례의 자기 베어링 모듈의 사진을 나타내었다. 본 발표에서는 외부 자기장의 형태에 따라 제어 자기장에 미치는 영향을 CFD-ACE+(ESI corp)를 활용하여 해석하였다.

• Design & Manufacturing
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• v.14 no.3
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• pp.23-30
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• 2020

Laser Assisted Thermo-Compression Bonding (LATCB) has been proposed to improve the "chip tilt due to the difference in solder bump height" that occurs during the conventional semiconductor chip bonding process. The bonding module of the LATCB system has used a piezoelectric actuator to control the inclination of the compression jig on a micro scale, and the piezoelectric actuator has been directly coupled to the compression jig to minimize the assembly tolerance of the compression jig. However, this structure generates a lateral force in the piezoelectric actuator when the compression jig is tilted, and the stacked piezoelectric element vulnerable to the lateral force has a risk of failure. In this paper, the optimal design of the flexure hinge was performed to minimize the lateral force generated in the piezoelectric actuator when the compression jig is tilted by using the displacement difference of the piezoelectric actuator in the bonding module for LATCB. The design variables of the flexure hinge were defined as the hinge height, the minimum diameter, and the notch radius. And the effect of the change of each variable on the stress generated in the flexible hinge and the lateral force acting on the piezoelectric actuator was analyzed. Also, optimization was carried out using commercial structural analysis software. As a result, when the displacement difference between the piezoelectric actuators is the maximum (90um), the maximum stress generated in the flexible hinge is 11.5% of the elastic limit of the hinge material, and the lateral force acting on the piezoelectric actuator is less than 1N.

• Journal of the Korean Society of Safety
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• v.27 no.3
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• pp.57-62
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• 2012

The purpose of this paper is to find dangerous factors of a water purifier when water leaks due to inappropriate use and analyze the patterns of damaged parts in order to provide data for the examination of the cause of the problem. If the water purifier is inspected and managed by a non-specialist, when the FLC(Float Level Controller) at the top is inclined, water leakage may occur to the water purifier. The leaked water flows onto the cables and hoses and enters the thermostat terminal, heater, PCB, power supply connection connector, etc., becoming a dangerous factor that may cause a system failure, fire, etc. Due to the water that entered the input terminal, low noise and white smoke were generated at first. However, the flame gradually propagated due to the continuous inflow of moisture. It was found that when moisture reached the PCB, a carbonized conductive path was formed at the varistor terminal, input terminal, semiconductor device terminal, etc., and the flame became larger, which might result in a fire. From the metal microscope analysis of a damaged condenser terminal, it was found that the amorphous structure unique to copper cable disappeared, and voids, boundary surface and disorderly fine particles occurred. Also, in the case of the connector into which moisture penetrated, fusion and deformation occurred at the cable connection clips. The result of analysis of the power supply cable connector using a thermal image camera showed that most of the heat was generated from the cable connection clips and the temperature at the connection center was normal.