• Journal of Korea Foundry Society
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• v.37 no.6
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• pp.181-185
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• 2017

In the present study, the effect of cooling rate on the formation of the porosity in the thick aluminum sand casting was investigated. Nowadays, due to considerations of weight and cost reduction, large scale thick aluminum casting has replaces steel frames for vacuum chambers for semiconductor production. Several thick aluminum castings were manufactured using chill with temperature measurements. The castings were inspected using 3D computed tomography in order to quantify the porosity defect density in the castings. Effects of the thickness of the chill on the porosity defect density were discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.121-121
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• 1999

Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.

• Transactions of the Society of Information Storage Systems
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• v.5 no.2
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• pp.89-95
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• 2009

We setup the system to measure the noise characteristics of the 5M complementary metal-oxide semiconductor (CMOS) image sensor by generic measurement indicator of Standard mobile imaging architecture (SMIA) which is one of internal standard of mobile imaging architecture. To evaluate the effect of environment and setting parameters, such as temperature and integration time, we measure the variation of the dark signal, dynamic range and fixed pattern noise of image sensor. We also detect the number of defective pixels and cluster defects defined as adjacent single defect pixels at 5M CMOS image sensor. Then, we find the existence of some cluster defects in experiment, which are not expected in calculation.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.189-192
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• 2009

The leakage current in a CMOS image sensor (CIS) can have various origins. Leakage current investigations have focused on such things as cobalt-salicide, source and drain scheme, and shallow trench isolation (STI) profile. However, there have been few papers examining the effects on leakage current of nitride stringers that are formed by gate sidewall etching. So this study reports the results of a series of experiments on the effects of a nitride stringer on real display images. Different step heights were fabricated during a STI chemical mechanical polishing process to form different nitride stringer sizes, arsenic and boron were implanted in each fabricated photodiode, and the doping density profiles were analyzed. Electrons that moved onto the silicon surface caused the dark leakage current, which in turn brought up the speckle defect on the display image in the CIS.

• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.73-80
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• 2013

In the process of lithography using ultra violet light sources for semiconductor devices, most of defects are made by sub-micrometer pollutants generated at photochemical reactions. We proposed and developed a novel vibration-insensitive on-axis interferometer with a sub-micrometer lateral resolution by using the interference between two beams: one scattered from defects and the other reflected from a reference area without defects. The proposed system was successfully demonstrated to detect a small Al defect of 0.5 ${\mu}m$ diameter within the inspection time of less than 30 minutes over the area of the photo-mask which is 6 inch by 6 inch square.

• Journal of the Korean Society for Nondestructive Testing
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• v.29 no.6
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• pp.550-556
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• 2009

In an application of a time reversal(TR) focusing of array transducer on a defect inside the test material, we employ a new time delay focusing technique based the TR process. In order to realize this idea, a multi-channel ultrasonic system is constructed capable of applying necessary time delays to each channel. The TR-based focusing procedure first measures the backscattered signals after firing one of the array elements. A phase slope method is then used to determine the time-of-flights of the backscattered signals received by all elements of the array. These time delays are used to adjust the time of excitation of the elements for transmission focusing on the defect. In addition to the TR focusing, the classical phased array focusing is also considered for comparison. Experimental results show that the TR-based time delay focusing produces much stronger backscattered signals than the phased array focusing, demonstrating the enhanced capability of the TR focusing.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.123-127
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• 1997

Recently, it is gradually raised necessity that interface is measured accurately and managed in industrial circles and medical world, An Ultrasonic wave transmitted from a focused beam transducer is being expected as a powerful tool for NDE of micro-defect. The ultrasonic NDE of the defect is based on the form of the wave reflected form the interface In this study, regarding to the thickness of film which is in opaque object and thickness measurement was done by MEM-cepstrum analysis of received ultrasonic wave. In measument results, film thickness which is beyond distance resolution capacity was measured accurately. Also, automatically repeated discrimination analysis method can be decided in the category of all kinds of defects on semiconductor package.

• Tribology and Lubricants
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• v.31 no.6
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• pp.239-244
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• 2015

Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.

• Journal of the Korean Operations Research and Management Science Society
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• v.20 no.1
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• pp.27-34
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• 1995

In this paper, we have developed a model to determine the input quantity to be processed at each stage of a multi-stage production system in which the yield at each stage may be random and may need reworking at this stage. Yield randomness. especially in a semiconductor industry, is a most challenging problem for production control. The demand for flnal product is uncertain. We have extended the model proposed in Park and Kim[9] to consider a multiple number of reworkings which can be done at any stage prior to or tat the stage whose output in bad, depending on the level of the defect.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.184-185
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• 2003

Unlike the conventional waveguide such as optical fiber using total internal reflection, photonic crystal waveguide(PCW), a waveguide made of a line defect in a photonic crystal(PC) structure, does not admit an analytic approach due to its complexity but requires a direct numerical approach. Here, we present numerical results of computer simulation for PCW by using the three-dimensional(3D) Finite-Difference Time -Domain(FDTD) algorithm. (omitted)