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Detection System for Sub-micrometer Defects of a Photo-mask Using On-axis Interference between Reflected and Scattered Lights

  • Lee, Sangon (Department of Applied Optics and Electromagnetics, Hannam University) ;
  • Jo, Jae Heung (Department of Applied Optics and Electromagnetics, Hannam University) ;
  • Kim, Jong Soo (Nano Electro Optics Co., Ltd.) ;
  • Moon, Il Kweon (Korea Research Institute of Standard and Sciences)
  • Received : 2012.12.05
  • Accepted : 2013.01.22
  • Published : 2013.02.25

Abstract

In the process of lithography using ultra violet light sources for semiconductor devices, most of defects are made by sub-micrometer pollutants generated at photochemical reactions. We proposed and developed a novel vibration-insensitive on-axis interferometer with a sub-micrometer lateral resolution by using the interference between two beams: one scattered from defects and the other reflected from a reference area without defects. The proposed system was successfully demonstrated to detect a small Al defect of 0.5 ${\mu}m$ diameter within the inspection time of less than 30 minutes over the area of the photo-mask which is 6 inch by 6 inch square.

Keywords

References

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