• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.63-63
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• 2003

• Proceedings of the Korean Society of Laser Processing Conference
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• 2002.11a
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• pp.65-67
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• 2002

• 연구논문집
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• s.33
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• pp.99-109
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.56-56
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.1-5
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• 2000

As the semiconductor devices are miniaturized, the number of the unit cleaning processes increases. In order to processes by conventional RCA cleaning process, the consumption of volume of liquid chemical and DI water became huge. Therefore, the problem of environmental issues are evolved by the increased consumption of chemicals. To resolve this matter, an advanced cleaning process by Electrolyzed Water was studied in this work. The electrolyzed water was made by an electrolysis equipment which was composed of three chambers of anode, cathode, and middle chambers. In the case of electrolyzed water with electrolytes in the middle chamber, oxidatively acidic water of anode and reductively alkaline water of cathode were obtained. The oxidation/reduction potentials and pH of anode water and cathode water were measured to be +l000mV and 4.8, and -530mV and 6.3, respectively. The Si-wafers contaminated with metallic impurities were cleaning with the electrolyzed water. To analysis the amounts of metallic impurities on Si-water surfaces, ICP-MS(Inductively Coupled Plasma-Mass spectrometer) was introduced. From results of ICP-MS measurements, it was concluded that the ability of electrolyzed water was equivalent to that of the conventional RCA cleaning.

• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.29-33
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• 2008

Rapid increase of integrity for recent semiconductor industry highly demands the development of removal technology of contaminated particles in the scale of a few microns or even smaller. It is known that the surface cleaning technology using $CO_2$ snow has its own merits of high efficiency. However, the detailed removal mechanism of particles using this technology is not yet fully understood due to the lack of sophisticated research endeavors. The detachment mechanism of particles from the substrates is known to be belonged in four types; rebounding, sliding, rolling and lifting. In this study, a modeling effort is performed to explain the detachment mechanism of a contaminant particle due to the rebounding caused by the vertical collision of the $CO_2$ snow. The Hertz and Johnson-Kendall-Roberts(JKR) theories are employed to describe the contact, adhesion and deformation mechanisms of the particles on a substrate. Numerical simulations are followed for several representative cases, which provide the perspective views on the dynamic characteristics of the particles as functions of the material properties and the initial inter-particle collision velocity.

• Journal of the Korean institute of surface engineering
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• v.54 no.6
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.3
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• pp.135-140
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• 2020

Since the process gas that is essential in the semiconductor process is a harmful gas, it is an essential task to solve it in an environmentally friendly manner. Currently, the cleaning technology used in the semiconductor process is mostly a wet cleaning based on hydrogen peroxide developed in the 1970s, and the SC-1 cleaning liquid for removing particles on the surface uses a mixture of ammonia and hydrogen peroxide. Therefore, environmental problems are caused, and economic problems caused by excessive water use are also serious. For this reason, the products developed through this study are used to decompose the process harmful gas from the chamber outlet into a harmless gas before entering the vacuum pump, or by incineration and the gaseous components are deposited on the pump. I want to solve the problem. In this paper, CPS (Confined Plasma Source) is proposed to save environment and improve productivity by replacing harmful gases (N2, CF4, SF6⋯., Etc) which are indispensable in semi-contamination process with innocuous gases or incineration with plasma, to study.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.147-157
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• 1994

Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes i, e, deposition etching and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be ecvaporated by SR irradiation which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.

• Korean Chemical Engineering Research
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• v.60 no.3
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• pp.452-458
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• 2022

Three types of gas-liquid hybrid horizontal, vertical and needle-to-cylinder plasma reactors were fabricated. Through these reactors, a high-efficiency, eco-friendly cleaning concept that generates reactive active species generated in atmospheric plasma discharge and gas-liquid activation reaction of cleaning components through the potential difference within the electrode was presented. As a result of comparing the efficiency for cleaning performance, the needle-to-cylinder type reactor had the best characteristics. Through this study, it was confirmed that the gas-liquid hybrid atmospheric pressure plasma reactor has the potential to be applied to ultra-precision cleaning processes such as semiconductor processes.