• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 추계학술발표회초록집
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• pp.63-63
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• 2003

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2002년도 추계학술발표대회 논문개요집
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• pp.65-67
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• 2002

• 연구논문집
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• 통권33호
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• pp.99-109
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.56-56
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• 2005

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.1-5
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• 2000

As the semiconductor devices are miniaturized, the number of the unit cleaning processes increases. In order to processes by conventional RCA cleaning process, the consumption of volume of liquid chemical and DI water became huge. Therefore, the problem of environmental issues are evolved by the increased consumption of chemicals. To resolve this matter, an advanced cleaning process by Electrolyzed Water was studied in this work. The electrolyzed water was made by an electrolysis equipment which was composed of three chambers of anode, cathode, and middle chambers. In the case of electrolyzed water with electrolytes in the middle chamber, oxidatively acidic water of anode and reductively alkaline water of cathode were obtained. The oxidation/reduction potentials and pH of anode water and cathode water were measured to be +l000mV and 4.8, and -530mV and 6.3, respectively. The Si-wafers contaminated with metallic impurities were cleaning with the electrolyzed water. To analysis the amounts of metallic impurities on Si-water surfaces, ICP-MS(Inductively Coupled Plasma-Mass spectrometer) was introduced. From results of ICP-MS measurements, it was concluded that the ability of electrolyzed water was equivalent to that of the conventional RCA cleaning.

• 반도체디스플레이기술학회지
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• 제7권4호
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• pp.29-33
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• 2008

Rapid increase of integrity for recent semiconductor industry highly demands the development of removal technology of contaminated particles in the scale of a few microns or even smaller. It is known that the surface cleaning technology using $CO_2$ snow has its own merits of high efficiency. However, the detailed removal mechanism of particles using this technology is not yet fully understood due to the lack of sophisticated research endeavors. The detachment mechanism of particles from the substrates is known to be belonged in four types; rebounding, sliding, rolling and lifting. In this study, a modeling effort is performed to explain the detachment mechanism of a contaminant particle due to the rebounding caused by the vertical collision of the $CO_2$ snow. The Hertz and Johnson-Kendall-Roberts(JKR) theories are employed to describe the contact, adhesion and deformation mechanisms of the particles on a substrate. Numerical simulations are followed for several representative cases, which provide the perspective views on the dynamic characteristics of the particles as functions of the material properties and the initial inter-particle collision velocity.

• 한국표면공학회지
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• 제54권6호
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

• 한국인터넷방송통신학회논문지
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• 제20권3호
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• pp.135-140
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• 2020

반도체 공정에서 필수적인 공정가스가 유해가스이기 때문에 이를 친환경적으로 해결하는 것이 필수과제이다. 현재 반도체 공정에서 사용되는 세정기술은 대부분이 1970년대 개발된 과산화수소를 근간으로 하는 습식 세정으로, 표면의 입자를 제거하기 위한 SC-1 세정액은 암모니아와 과산화수소 혼합액을 사용하고 있다. 따라서 환경적 문제를 유발하며, 또한 과도한 용수 사용으로 인한 경제적 문제도 심각하다. 이러한 이유로 본 연구를 통한 개발 제품은 챔버 출구에서 나오는 공정 유해가스를 진공펌프에 입력되기 전 가스를 분해하여 해가 없는 가스로 만들거나 소각과 동시에 펌프에 가스의 성분이 증착되어 반도체 공정의 환경적 문제를 해결하고자 한다. 본 논문에서는 반도제 공정에서 필수 불가결하게 사용되는 유해가스(N2, CF4, SF6⋯. 등)를 사람에게 무해한 가스로 치환하거나 플라스마로 소각하여 환경을 살리고 생산성 향상이 되도록 제안된 CPS (Confined Plasma Source)를 연구하고자 한다.

• 한국진공학회지
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• 제3권2호
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• pp.147-157
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• 1994

Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes i, e, deposition etching and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be ecvaporated by SR irradiation which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.

• Korean Chemical Engineering Research
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• 제60권3호
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• pp.452-458
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• 2022

3가지 종류의 기-액 하이브리드 수평형, 수직형 그리고 needle-to-cylinder형 플라즈마 반응기가 제작되었다. 이들 반응기를 통하여 대기압 플라즈마 방전에서 발생하는 반응 활성종 생성과 전극 내의 전위차를 통한 세정성분의 기-액 활성화 반응을 일으키는 고효율 친환경 기반의 세정 개념을 제시하였다. 세정성능에 대한 효율성을 비교한 결과, needle-to-cylinder형 반응기가 가장 우수한 특성을 가졌다. 본 연구를 통해 기-액 하이브리드 대기압 플라즈마 반응기가 반도체 공정 등 초정밀 세정공정에 응용 가능성이 있음을 확인하였다.