• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.26 no.3
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• pp.301-306
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• 2016

Objectives: Direct-reading instrument(Photoionization detectors, PID) and quantitative analysis using active type air sampling (Gas chromatography-flame ionization detector, GC-FID) were tested to evaluate their ability to detect volatile organic compounds(VOCs) in a semiconductor manufacturing plant. Methods: The organic compounds used were acetone and ethanol which are normally used as cleaning solutions in the semiconductor manufacturing. The evaluation was based on the preparation of test solutions of known acetone and ethanol concentration in a chamber($600{\times}600{\times}1150mm$). Samples were prepared that would be equivalent to 5~100 ppm for acetone and 10~ 200 ppm ethanol. GC-FID and PID were evaluated simultaneously. Quantitative analysis was performed after sampling and the direct-reading instrument was checked using real-time data logging. Results: Positive correlations between PID and GC-FID were found for acetone and ethanol at 0.04~2.4% for acetone(TLV: 500 ppm) and 0.1~8.3% for ethanol(TLV: 1000 ppm). When the sampling time was 15 min, concentration of test solution was the most similar between measurement methods. However, the longer the sampling time, the less similar the results. PID and GC-FID had similar exposure patterns. Conclusions: The results indicate that PID and GC-FID have similar exposure pattern and positive correlation for detection of acetone and ethanol. Therefore, PID can be used for exposure monitoring for VOCs in the semiconductor manufacturing industry. This study has significance in that it validates measuring occupational exposure using a portable device.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.19-22
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• 2013

The purpose of this study is to develop a system that can monitor the amounts of energy consumption during CVD and etching process for semiconductor manufacturing. Specifically, this system is designed to measure the $CO_2$ emission amounts quantitatively by measuring the flow rate of gas used and amount of power consumed during the processes. The processes of CVD equipment can be classified generally into processing step and cleaning step and all the two steps were monitored. In CVD and etcher equipments, various gases including Ar and $O_2$ are used, but Ar, $O_2$ and He were monitored with the use of the LCI data of Korea Environmental Industry & Technology Institute and carbon emission coefficients of EcoInvent. As a result, it was found that the carbon emission amounts of CVD equipment for Ar, $O_2$ and He were $0.030kgCO_2/min$, $4.580{\times}10^{-3}kgCO_2/min$ and $6.817{\times}10^{-4}kgCO_2/min$, respectively and those of etcher equipment for Ar and $O_2$ are $5.111{\times}10^{-3}kgCO_2/min$ and $7.172kgCO_2/min$, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.8
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• pp.5541-5549
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• 2015

This paper introduces a safer and more power efficient heater by using induction heating, to apply to the semiconductor wafer fabrication exhaust gas cleaning system. The exhaust gas cleaning system is currently made with filament heater that generates an endothermic reaction of N2 gas for the removal of moisture. Induction theory, through the bases of theoretical optimization and electronic implementation, is applied in the design of the induction heater specifically for the semiconductor wafer exhaust system. The new induction heating design provides a solution to the issues with the current energy inefficient, unreliable, and unsafe design. A robust and calibrated design of the induction heater is used to optimize the energy consumption. Optimization is based on the calibrated ZVS induction circuit design specified by the resonant frequency of the exhaust pipe. The fail-safe energy limiter embedded in the system uses a voltage regulator through the feedback of the MOSFET control, which allows the system performance to operate within the specification of the N2 Heater unit. A specification and performance comparison from current conventional filament heater is made with the calibrated induction heater design for numerical analysis and the proof of a better design.

• Journal of the Semiconductor & Display Technology
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• v.16 no.3
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• pp.47-52
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• 2017

Solar cell industry requires high technologies to stabilize apparatuses for the wafer manufacturing. Vibrations of squaring & grinding machines are one of the most critical factors for causing residual stresses of ingots, which are the main reasons of the breakage in the following processes such as wire sawing, cleaning, and modularity. In this study, the structure of a squaring & grinding machine has been analyzed through experiments and computer simulations to figure out the ways to suppress the vibrations effectively, and further to minimize the breakage of wafers. The result shows that simple design changes of applying a few ribs can improve the stability of the machine.

• Journal of the Semiconductor & Display Technology
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• v.16 no.3
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• pp.41-46
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• 2017

This study aims to select suitable co-solvents and to obtain optimal process conditions in order to improve process efficiency and productivity through experimental results obtained under various experimental conditions for the etching and rinsing process using liquid carbon dioxide and supercritical carbon dioxide. Acetone was confirmed to be effective through basic experiments and used as the etching solution for MEMS-wafer etching in this study. In the case of using liquid carbon dioxide as the solvent and acetone as the etching solution, these two components were not mixed well and showed a phase separation. Liquid carbon dioxide in the lower layer interfered with contact between acetone and Mems-wafer during etching, and the results after rinsing and drying were not good. Based on the results obtained under various experimental conditions, the optimum process for treating MEMS-wafer using supercritical CO2 as the solvent, acetone as the etching solution, and methanol as the rinsing solution was set up, and MEMS-wafer without stiction can be obtained by continuous etching, rinsing and drying process. In addition, the amount of the etching solution (acetone) and the cleaning liquid (methanol) compared to the initial experimental values can be greatly reduced through optimization of process conditions.

• Journal of Advanced Technology Convergence
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• v.2 no.4
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• pp.1-6
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• 2023

Research on power inductor surface UV printing equipment using cylindrical magnets can prevent damage to quality consumable materials (making plates, Squeegees) during printing and improve printing quality by applying technology to prevent product from flipping or standing up when fixing the product by making the magnetic formation of cylindrical magnets form up and down. The development of cylindrical magnets that changed the direction of magnetic force will stabilize the fixing method for metal products made by powder compression, increasing the production capacity for small products. Finally, by studying the power inductor surface UV printing device using cylindrical magnets, it can be differentiated from the spray and deeping methods that were being worked on, production will be greatly improved, and as a result, cost reduction and competitive production will be possible.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.66-69
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• 2017

In this study, the fabrication and electrical properties of aligned single-walled carbon nanotube (SWCNT) networks using a template-based fluidic assembly process are presented. This complementary metal-oxide-semiconductor (CMOS)-friendly process allows the formation of highly aligned lateral nanotube networks on $SiO_2/Si$ substrates, which can be easily integrated onto existing Si-based structures. To measure outstanding electrical properties of organized SWCNT devices, interfacial contact resistance between organized SWCNT devices and Ti/Au electrodes needs to be improved since conventional lithographic cleaning procedures are insufficient for the complete removal of lithographic residues in SWCNT network devices. Using optimized purification steps and controlled developing time, the interfacial contact resistance between SWCNTs and contact electrodes of Ti/Au is reached below 2% of the overall resistance in two-probe SWCNT platform. This structure can withstand current densities ${\sim}10^7A{\cdot}cm^{-2}$, equivalent to copper at similar dimensions. Also failure current density improves with decreasing network width.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.921-926
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• 1997

SOI(Silicon On lnsulator) technology is many advantages in the gabrication of MOS(Metal-Oxide Semiconductor) and CMOS(Complementary MOS) structures. These include high speed, lower dynamic power consumption,greater packing density, increased radiation tolearence et al. In smiple form of bonded SOL wafer manufacturing, creation of a bonded SOI structure involves oxidizing at least one of the mirror polished silicon surfaces, cleaning the oxidized surface and the surface of the layer to which it will be bonded,bringing the two cleanded surfaces together in close physical proximity, allowing the subsequent room temperature bonding to proceed to completion, and than following this room temperature joining with some form of heat treatment step,and device wafer is thinned to the target thickness. This paper has been performed to investigate the possibility of the bonded SOI wafer manufacturing Especially, we focused on the bonding quality and thinning method. Finally,we achieved the bonded SOI wafer that Si layer thickness is below 3 .mu. m and average roughness is below 5.angs.

• 제어로봇시스템학회:학술대회논문집
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• 1995.10a
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• pp.87-90
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• 1995

When the ultrasonic transducer operating at l MHz for use in cleaning semiconductor wafers or other industsrial materials is driven from the MOS-FET DC-to RF inverter, the output power severely depends on the frequency of operation since the quality factor of the transducer is high. In order to tune to the eresonating frequency of the ultrasonic transducer, the drive signal frequency of the MOS-FET power inverter is automatically scananed until the frequency is set at the resonating frequency of the ultrasonic transducer is maximized. The control circuit consists of an output power sensing circuit, a PLL controller, a frequency standard, and other peripheral circuits. The operation was satisfactory when the transducer having an output of 600 W at 1 MHz was used.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1999.11a
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• pp.184-188
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• 1999

The power semiconductor switching devices(PSSD) continuously developed, Power Electronic Technology using PSSD is gradually extended. The high frequency inverter to generate the large power high frequency subject to power electronic technology pursuit various applications. Also, in emboss with environmental destruction problem cause the atmosphere and the water pollution to growth of the commercial society, the research in favor of cleaning environmental a pollutant actively proceed. Therefore, This paper describe study on the high frequency pulse power supply. The theoretical results are in good agreement with the experimental ones. The proposed pulse power supply is considerated to be useful for discharge lamp.