• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.126-133
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• 1994

Doping effects and semiconductor behaviors of the dispersed p- and n-Si, p- and n- GaAs particles in the aqueous electrolyte have been studied using microelectrophoretic, voltammetric and chronoamperometric techniques. The cations (K$^{+}$) are adsorbed on both the p- and n- Si particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are negatively charged acceptor states. On the other hand, the anions (CI$^{-}$) are adsorbed on both the p- and n- GaAs particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are positively charged donor states. Under the same conditions, electrophoretic mobilities, electrochemical processes, doping effects and related semiconductor behaviors of the Si and the GaAs particles are similar regardless of the doping profiles, i. e. dopants and doping concentrations. The doping effects and related semiconductor behaviors of the dispersed p- and n- type semiconductor particles are gradually lost with decreasing dimensions.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1430-1433
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• 2003

Transducers, which are incorporated in control devices for fixed wing aircraft, land vehicles. and weapon systems were designed and manufactured by use of semiconductor strain gages. These transducers consist of three parts; flange mounts, sensing rods, and semiconductor strain gages. In this investigation, we designed cylindrical sensing rods with high sensitivity and developed installation procedures of semiconductor strain gages. The semiconductor strain gage has hish gage factor such that it can produce high resistance change in spite of low strain, but it is so small and fragile that one should handle carefully and sophisticated installation method is needed for good performances. The prototype transducers are manufactured, and then tested about three important factors: sensitivity, linearity, and hysteresis. We got results or 0.084 V/N sensitivity, 0.2% nonlinearity, and 0.5% hysteresis.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.522-529
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• 2013

In this paper, simple but very effective techniques to suppress subthreshold hump effect for high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) technology are presented. Two methods are proposed to suppress subthreshold hump effect using a simple layout modification approach. First, the uniform gate oxide method is based on the concept of an H-shaped gate layout design. Second, the gate work function control method is accomplished by local ion implantation. For our experiments, $0.18{\mu}m$ 20 V class HV CMOS technology is applied for HV MOSFETs fabrication. From the measurements, both proposed methods are very effective for elimination of the inverse narrow width effect (INWE) as well as the subthreshold hump.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.153-153
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• 2006

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.87-89
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• 2006

This paper proposes a sense amplifier with non-volatile memory in order to improve the image quality of LCD by enhancing the matching of the driving voltages between the panel and driver. The sense amplifier having a wide sensing margin and fast response adjusts LCD driver voltage of display driver. The CSTN-LCD with the sense amplifier results improved image quality than that with conventional 6 bit column driver without it.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.98-103
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• 2009

An RF test structure is proposed and its applicability is confirmed by measuring DC characteristics and high frequency characteristics. Effective mobility extraction is also performed to confirm the validity of proposed test structure. The area of suggested test structure consumed on wafer was decreased by more than 50% and its characteristics do not be degraded compared with conventional structure.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.606-608
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• 1995

A thermally actuated micro-relay using a mercury-contact has been designed and fabricated. The mercury actuation was achieved by external nitrogen pressure and the mercury-contact was moved by actuation pressure of 110torr in the 100${\mu}m$ wide microchannel. The Injection pressure of mercury was 300torr in the 60${\mu}m$ wide microchannel of the micro relay structure.

• Journal of the Korean Society of Safety
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• v.15 no.4
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• pp.62-68
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• 2000

Static electricity in electronics manufacturing plants causes the economic loss, yet it is one of the least understood and least recognized effects haunting the industry today. Today's challenge in semiconductor devices is to achieve greater functional density pattern and to miniaturize electronic systems of being more fragile by electrostatic discharges(ESD) phenomena. As the use of automatic handling equipment for static-sensitive semiconductor components is rapidly increased, most manufacturers need to be more alert to the problem of ESD. One of the most common causes of electrostatic damage is the direct transfer of electrostatic charge from the human body or a charged material to the static-sensitive devices. To evaluate the ESD hazards by charged human body and devices, in this paper, characteristics of electrostatic attenuation in domestic semiconductor devices is investigated and the voltage to cause electronic component failures is investigated by field-induced charged device model(FCDM) tester. The FCDM simulator provides a fast and inexpensive test that faithfully represents ESD hazards in plants. Also the results obtained in this paper can be used for the prevention of semiconductor failure from ESD hazards.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1442-1447
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• 2003

Computer is a very powerful machine which is widely using for data processing, DB construction, peripheral device control, image processing etc. Consequently, many researches and developments have progressed for high performance processing unit, and other devices. Especially, the core units such as semiconductor parts are rapidly growing so that high-integration, high-performance, microminiat turization is possible. The packaging in the semiconductor industry is very important technique to de determine the performance of the system that the semiconductor is used. In this paper, the inspection of the inner defects such as delamination, void, crack, etc. in the semiconductor packages is studied. ESPI which is a non-contact, non-destructive, and full-field inspection method is used for the inner defect inspection and its results are compared with that of C-Scan method.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.158-162
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• 2002

This paper presents a novel 3-phase IGBT module called the SPM (Smart Power Module). This is a new design developed to provide a very compact, low cost, high performance and reliable motor drive system. Several distinct design concepts were used to achieve the highly integrated functionality in a new cost-effective small package. An overall description to the SPM is given and actual application issues such as electrical characteristics, circuit configurations, thermal performance and power ratings are discussed