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http://dx.doi.org/10.5573/JSTS.2009.9.2.098

Application of Area-Saving RF Test Structure on Mobility Extraction  

Lee, Jae-Hong (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
Kim, Jun-Soo (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
Lee, Jong-Duk (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
Shin, Hyung-Cheol (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.9, no.2, 2009 , pp. 98-103 More about this Journal
Abstract
An RF test structure is proposed and its applicability is confirmed by measuring DC characteristics and high frequency characteristics. Effective mobility extraction is also performed to confirm the validity of proposed test structure. The area of suggested test structure consumed on wafer was decreased by more than 50% and its characteristics do not be degraded compared with conventional structure.
Keywords
MOSFET; RF; test structure;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
Times Cited By SCOPUS : 0
연도 인용수 순위
1 Ming-Hsiang Cho, Ryan Lee, An-Sam Peng, David Chen, Chune-Sin Yeh, and Lin-Kun Wu, "Miniature RF Test Structure for On-Wafer Device Testing and In-Line Process Monitoring", IEEE Trans. Electron Devices, vol. 55, no. 1, pp. 462-465, 2008   DOI   ScienceOn
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4 Junsoo Kim, Jaehong Lee, Yeonam Yun, Byung-Gook Park, Jong Duk Lee, and Hyungcheol Shin, "Extraction of effective carrier velocity and observation of velocity overshoot in sub-40 nm MOSFETs", Journal of Semiconductor Technology and Science, vol. 8, no. 2, pp. 115-120, 2008   DOI   ScienceOn
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6 Junsoo Kim, Jaehong Lee, Yeonam Yun, Byung-Gook Park, Jong Duk Lee, and Hyungcheol Shin, "Accurate Extraction of Mobility, Effective Channel Length, and Source/Drain Resistance in 60 nm MOSFETs", International Conference on Solid State Devices and Materials, pp. 442-443, 2007