• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.215-216
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• 2007

Semiconducting layers are thin rubber film between electrical cable wire and insulating polymer layers having a volume resistivity of ${\sim}10^2{\Omega}cm$. A new semiconducting material was suggested in this study based on the carbon nanotube(CNT)-reinforced polymer nanocomposites. CNT-reinforced polymer nanocomposites were prepared by solution mixing with various polymer type and dual filler system. The mechanical, thermal and electrical properties were investigated as a function of polymer type and dual filler system based on CNT and carbon black. The volume resistivity of composites was strongly related with the crystallinity of polymer matrix. With decreased crystallinity, the volume resistivity decreased linearly until a critical point, and it remained constant with further decreasing the crystallinity. Dual filler system also affected the volume resistivity. The CNT-reinforced nanocomposite showed the lowest volume resistivity. When a small amount of carbon black(CB) was replaced the CNT, the crystallinity increased considerably leading to a higher volume resistivity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.77-77
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• 2008

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권8호
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• pp.381-386
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• 2006

In this study, we have investigated electrical and mechanical properties of semiconducting materials for power cable caused by CNT. Specimens were made of sheet form with the four of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the pre-heated oven of both $23{\pm}\;1\;[^{\circ}C]\;and\;90{\pm}\;1\;[^{\circ}C]$. And stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400[Kgf/Cm2] and 600[%]. From this experimental results, the volume resistivity had different properties because of PTC/NTC tendency at between $23[^{\circ}C]\;and\;90[^{\circ}C]$. Also volume resistivity was low by increasing the content of CNT. It means that a small amount of CNT has a excellent electrical properties. And stress was increased, while strain was decreased by increasing the content of CNT. Thus, we could know that a small amount of CNT has a excellent electrical and mechanical oroperties.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.119-125
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• 2013

In this paper, semiconducting shield specimens for a DC cable is fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ratio of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.49-55
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• 2013

In this paper, semiconducting shield specimens for a DC cable os fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ration of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

• 전기전자학회논문지
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• 제22권2호
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• pp.420-426
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• 2018

가까운 미래에, 전자의 ballastic 혹은 near-ballastic 이동이 가능한 CNT(Carbon NanoTube)를 활용한 CNTFET(Carbon NanoTube Field Effect Transistor)은 현재의 실리콘 기반 트랜지스터를 교체할 유력한 후보 중 하나로 고려되고 있다. 고성능의 CNTFET으로 대규모 집적회로를 구현하기 위해서는 semiconducting CNT가 CNTFET 안에 동일한 간격과 높은 밀도로 정렬되어 배치되어야 하지만, CNTFET 공정의 미성숙으로, CNTFET 안의 CNT는 불규칙하게 배치하게 되고, 현존하는 HSPICE 라이브러리 파일은 불규칙한 CNT 배치에 의한 성능의 변화를 회로 레벨에서 평가할 수 있는 기능을 지원하지 않는다. 이러한 성능의 변화를 평가하기 위해서 선형 프로그래밍을 활용한 방법이 과거에 제안되었으나, CNTFET의 전류와 게이트 커패시턴스를 계산하는 과정에서 오차가 발생할 수 있는 문제점이 있다. 본 논문에서는 언급한 오차가 발생되는 이유에 대해서 자세히 논하고, 이 오차를 줄일 수 있는 새로운 방법을 제시하고자 한다. 시뮬레이션 검토 결과, 새롭게 제시된 방법이 기존 방법의 오차, 7.096%를 3.15%까지 줄일 수 있음을 보이고 있다.

• 한국융합학회논문지
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• 제12권1호
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• pp.193-198
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• 2021

본 연구에서는 초고압(Extra High Voltage) 케이블의 방식층(Oversheath)에 사용되는 반도전성 난연컴파운드의 보다 우수한 내충격성 및 전기적 특성을 만족할 수 있는 나노융복합 소재기술에 대해 연구하였다. 반도전성 난연컴파운드에 사용되는 도전성 카본블랙 일부를 CNT(carbon nano tube)로 대체하였으며, 이때 물성변화를 분석하였다. 전기적 특성이 현격하게 뛰어난 탄소나노튜브의 적용을 통해 소량의 전도성필러 처방으로도 보다 우수한 전기적 특성을 부여할 수 있게 된다. 또한, 컴파운드 기준 전체 필러량이 감량됨에 따라서 가공성이 향상되며, 특히 유연성 및 내충격성이 향상되기 때문에 케이블의 내구성 향상에 기여할 것으로 기대된다.

• Carbon letters
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• 제17권1호
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• pp.29-32
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• 2016

This paper addresses the effect of dopants on the electronic properties of zigzag (8, 0) semiconducting single walled carbon nanotubes (SWCNTs), using extended Hückel theory combined with nonequilibrium Green’s function formalism. Through appropriate dopant concentrations, the electronic properties of SWCNTs can be modified. Within this context, we present our ongoing investigation on (8, 0) SWCNTs doped with nitrogen. Quantum confinement effects on the electronic properties of the SWCNTs have also been investigated. The obtained results reveal that the electronic properties of SWCNTs are strongly dependent on the dopant concentration and modification of electronic structures by hydrogen confinement.

• Carbon letters
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• 제8권4호
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• pp.307-312
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• 2007

A method for evaluating bulk sensitive structural characteristics of unpurified, as-purified, and acid treated single walled carbon nanotubes (SWNTs) was described in the present study. The optical spectra of SWNT solutions were well resolved after prolonged sonication and they were correlated to the diameter and the distribution of nanotubes. The acid-treated SWNTs were similar to as-purified SWNTs in terms of catalyst residue, radial breathing mode (RBM) in the Raman spectra, and the first band gap energy of semiconducting tubes in the optical spectra. The solution phase optical spectra were more sensitive to changes in the small diameter and metallic tubes after the acid treatment than were the RBM spectra.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.3.1-3.1
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• 2011

Nanoengineered materials with advanced architectures are critical building blocks to modulate conventional material properties or amplify interface behavior for enhanced device performance. While several techniques exist for creating one dimensional heterostructures, electrospinning has emerged as a versatile, scalable, and cost-effective method to synthesize ultra-long nanofibers with controlled diameter (a few nanometres to several micrometres) and composition. In addition, different morphologies (e.g., nano-webs, beaded or smooth cylindrical fibers, and nanoribbons) and structures (e.g., core-.shell, hollow, branched, helical and porous structures) can be readily obtained by controlling different processing parameters. Although various nanofibers including polymers, carbon, ceramics and metals have been synthesized using direct electrospinning or through post-spinning processes, limited works were reported on the compound semiconducting nanofibers because of incompatibility of precursors. In this work, we combined electrospinning and galvanic displacement reaction to demonstrate cost-effective high throughput fabrication of ultra-long hollow semiconducting chalcogen and chalcogenide nanofibers. This procedure exploits electrospinning to fabricate ultra-long sacrificial nanofibers with controlled dimensions, morphology, and crystal structures, providing a large material database to tune electrode potentials, thereby imparting control over the composition and shape of the nanostructures that evolved during galvanic displacement reaction.