• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.407-418
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• 2018

Increasing demand for portable and wireless electronic devices with high power and energy densities has inspired global research to investigate, in lieu of scarce rare-earth and expensive ruthenium oxide-like materials, abundant, cheap, easily producible, and chemically stable electrode materials. Several potential electrode materials, including carbon-based materials, metal oxides, metal chalcogenides, layered metal double hydroxides, metal nitrides, metal phosphides, and metal chlorides with above requirements, have been effectively and efficiently applied in electrochemical supercapacitor energy storage devices. The synthesis of self-grown, or in-situ, nanostructured electrode materials using chemical processes is well-known, wherein the base material itself produces the required phase of the product with a unique morphology, high surface area, and moderate electrical conductivity. This comprehensive review provides in-depth information on the use of self-grown electrode materials of different morphologies in electrochemical supercapacitor applications. The present limitations and future prospects, from an industrial application perspectives, of self-grown electrode materials in enhancing energy storage capacity are briefly elaborated.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.24.2-24.2
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• 2009

Nanostuctures such as nanodot and nanowire have been extensively studied as building blocks for nanoscale devices. However, the direct growth of the nanostuctures at the desired position is one of the most important requirements for realization of the practical devices with high integrity. Self-assembled nanotemplate is one of viable methods to produce highly-ordered nanostructures because it exhibits the highly ordered nanometer-sized pattern without resorting to lithography techniques. And selective epitaxial growth (SEG) can be a proper method for nanostructure fabrication because selective growth on the patterned openings obtained from nanotemplate can be a proper direction to achieve high level of control and reproducibility of nanostructucture fabrication. Especially, SiGe has led to the development of semiconductor devices in which the band structure is varied by the composition and strain distribution, and nanostructures of SiGe has represented new class of devices such nanowire metal-oxide-semiconductor field-effect transistors and photovoltaics. So, in this study, various shaped SiGe nanostructures were selectively grown on Si substrate through ultrahigh vacuum chemical vapor deposition (UHV-CVD) of SiGe on the hexagonally arranged Si openings obtained using nanotemplates. We adopted two types of nanotemplates in this study; anodic aluminum oxide (AAO) and diblock copolymer of PS-b-PMMA. Well ordered and various shaped nanostructure of SiGe, nanodots and nanowire, were fabricated on Si openings by combining SEG of SiGe to self-assembled nanotemplates. Nanostructure fabrication method adopted in this study will open up the easy way to produce the integrated nanoelectronic device arrays using the well ordered nano-building blocks obtained from the combination of SEG and self-assembled nanotemplates.

• Advances in nano research
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• v.2 no.4
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• pp.211-217
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• 2014

The self-assembled strain-induced sub-micrometric islands and nanostructures are grown from In-As-Sb-P quaternary liquid phase on InAs (100) substrates in Stranski-Krastanow growth mode. Two samples are under consideration. The first sample consists of unencapsulated islands and lens-shape quantum dots (QDs) grown from expressly inhomogeneous liquid phase. The second sample is an n-InAs/p-InAsSbP heterostructure with QDs embedded in the p-n junction interface. The morphology, size and shape of the structures are investigated by high-resolution scanning electron (SEM) and transmission electron (TEM) microscopy. It is shown that islands, as they decrease in size, undergo shape transitions. Particularly, as the volume decreases, the following succession of shape transitions are detected: sub-micrometric truncated pyramid, {111} facetted pyramid, {111} and partially {105} facetted pyramid, completely unfacetted "pre-pyramid", hemisphere, lens-shaped QD, which then evolves again to nano-pyramid. A critical size of $5{\pm}2nm$ for the shape transformation of InAsSbP-based lens-shaped QD to nano-pyramid is experimentally measured and theoretically evaluated.

• Journal of Magnetics
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• v.10 no.3
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• pp.108-112
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• 2005

GaAs nanowires were grown on GaAs (111)B substrates in a gas source molecular beam epitaxy system, using self-assembled Au particles with diameters between 25 and 200 nm as the catalytic agents. The growth rate and structure of the nanowires were investigated for substrate temperatures between 500 and $600^{\circ}C$ to study the mass transport mechanisms that drive the growth of these crystals. The possibilities for fabrication of novel magnetic nanostructures by suitable choice of growth conditions are discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.440-440
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• 2012

Nanomaterials have emerged as new building blocks to construct light energy harvesting assemblies. Size dependent properties provide the basis for developing new and effective systems with semiconductor nanoparticles, quantized charging effects in metal nanoparticle or their combinations in 2 and 3 dimensions for expanding the possibility of developing new strategies for photovoltaic system. As top-down approach, we developed a simple and effective method for the large scale formation of self-assembled Cu(In,Ga)$Se_2$ (CIGS) nanostructures by ion beam irradiation. The compositional changes and morphological evolution were observed as a function of the irradiation time. As the ion irradiation time increased, the nano-dots were transformed into a nano-ridge structure due to the difference in the sputtering yields and diffusion rates of each element and the competition between sputtering and diffusion processes during irradiation. As bottom-up approach, we developed the growth of CIGS nanowires using thermal-chemical vapor deposition (CVD) method. Vapor-phase synthesis is probably the most extensively explored approach to the formation of 1D nanostructures such as whiskers, nanorods, and nanowires. However, unlike binary or ternary chalcogenides, the synthesis of quaternary CIGS nanostructures is challenging because of the difficulty in controlling the stoichiometry and phase structure. We introduced a method for synthesis of the single crystalline CIGS nanowires in the form of chalcopyrite using thermal-CVD without catalyst. It was confirmed that the CIGS nanowires are epitaxially grown on a sapphire substrate, having a length ranged from 3 to 100 micrometers and a diameter from 30 to 500 nm.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.381-386
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• 2011

We fabricated the ZnO (zinc oxide)/$SiO_2$ (silicon dioxide) branch hierarchical nanostructures by the e-beam evaporation of $SiO_2$ onto the surface of the electrochemically grown ZnO nanorods on Si substrate, which leads to the self-assembled $SiO_2$ nanorods by oblique angle deposition between vapor flux and vertically aligned ZnO nanorods. In order to investigate the effects of $SiO_2$ deposition on the morphology and optical property of ZnO/$SiO_2$ branch hierarchical nanostructures, the evaporation time of $SiO_2$ was varied under a fixed deposition rate of 0.5 nm/s. The vertically aligned ZnO nanorods on Si substrate exhibited a low reflectance of <10% in the wavelength range of 300~535 nm. For ZnO/$SiO_2$ branch hierarchical nanostructures at 100 s of evaporation time of $SiO_2$, the more improved antireflective property was achieved. From these results, ZnO/$SiO_2$ branch hierarchical nanostructures are very promising for optoelectronic and photovoltaic device applications.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.699-704
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• 2018

One-dimensional nanostructures have attracted increasing attention because of their unique electronic, optical, optoelectrical, and electrochemical properties on account of their large surface-to-volume ratio and quantum confinement effect. Vertically grown nanowires have a large surface-to-volume ratio. The vapor-liquid-solid (VLS) process has attracted considerable attention for its self-alignment capability during the growth of nanostructures. In this study, vertically aligned silicon oxide nano-pillars were grown on Si\$SiO_2$(300 nm)\Pt substrates using two-zone thermal chemical vapor deposition system via the VLS process. The morphology and crystallographic properties of the grown silicon oxide nano-pillars were investigated by field emission scanning electron microscopy and transmission electron microscopy. The diameter and length of the grown silicon oxide nano-pillars were found to be dependent on the catalyst films. The body of the silicon oxide nano-pillars exhibited an amorphous phase, which is consisted with Si and O. The head of the silicon oxide nano-pillars was a crystalline phase, which is consisted with Si, O, Pt, and Ti. The vertical alignment of the silicon oxide nano-pillars was attributed to the preferred crystalline orientation of the catalyst Pt/Ti alloy. The vertically aligned silicon oxide nano-pillars are expected to be applied as a functional nano-material.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.461-461
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• 2013

Over the last decade, zinc oxide (ZnO) thin films have attracted considerable attention owing to large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature [1-3]. Recent interest in ZnO related researches has been switched into the fabrication and characterization of low-dimensional nanostructures, such as nano-wires and nano-dots that can be applicable to manufacture the optoelectronic devices such as ultraviolet lasers, light-emitting-diodes and detectors. Since the optical properties of ZnO nano-structures might be distinct from those of bulk materials or thin films, the low-dimensional phenomena should be examined further. In order to utilize such advanced optoelectronic devices, one of the challenges is how to control the surface state related emissions that are drastically increased with increasing the density of the nano-structures and the surface-to-volume ratio. This paper reports the synthesis and characterization of self-assembled ZnO hexagonal nano-disks grown by radio-frequency magnetron sputtering. X-ray diffraction data and scanning electron microscopy data showed that ZnO hexagonal nano-disks were nucleated on top of the flat surfaces as the film thickness reached to 1.56 ${\mu}m$ and then the number of nano-disks increased with increasing the film thickness. The lateral size of hexagonal nano-disks was ~720 nm and height was ~74 nm. The strong photo luminescence spectra obtained at 10 K was also observed, which was assigned to a surface exciton emission at 3.3628 eV arising from the surface sites of hexagonal nano-disks.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.462-462
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• 2013

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nanobelts, and nano-dots. In contrast to typical vaporliquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nanostructures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 chestnut burr were synthesized by using radio-frequency magnetron sputtering method. In contrast to typical sputtering method with sintered ceramic target, a Ga2O3 powder (99.99% purity) was used as a sputtering target. Several samples were prepared with varying the growth parameters, especially he growth time and the growth temperature to investigate the growth mechanism. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of Ga2O3 nano chestnut burr will be reported.