• 한국컴퓨터산업교육학회:학술대회논문집
• /
• 한국컴퓨터산업교육학회 2003년도 제4회 종합학술대회 논문집
• /
• pp.67-70
• /
• 2003

In this paper, propose a new structure of MOFET(Metal-Oxide-Semiconductor Field Effect Transistor) which is widely application for semiconductor technologies. Eleminate the latch-up effect caused by closed devices when conpose a electronic circuit using proposed devices. In this device have a completely isolation structure, and advantage of leakage current elimination. Each independent devices are isolated by trench-well and oxide layer of SOI substrate. Using trench gate and self aligned techniques reduces parasitic capacitance between gate and source, drain. In this paper, we proposed the new structure of SOI MOSFET which has completely isolation and contains trench gate electrodes and SOI wafers. It is simulated by MEDICI that is device simulator.

• The Korean Journal of Ceramics
• /
• 제3권4호
• /
• pp.257-262
• /
• 1997

Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 춘계학술발표대회
• /
• pp.10.2-10.2
• /
• 2011

The design and synthesis of protein-like polymers is a fundamental challenge in materials science. A biomimetic approach is to explore the impact of monomer sequence on non-natural polymer structure and function. We present the aqueous self-assembly of two peptoid polymers into extremely thin two-dimensional (2D) crystalline sheets directed by periodic amphiphilicity, electrostatic recognition and aromatic interactions. Peptoids are sequence-specific, oligo-N-substituted glycine polymers designed to mimic the structure and functionality of proteins. Mixing a 1:1 ratio of two oppositely charged peptoid 36 mers of a specific sequence in aqueous solution results in the formation of giant, free-floating sheets with only 2.7 nm thickness. Direct visualization of aligned individual peptoid chains in the sheet structure was achieved using aberration-corrected transmission electron microscopy. Specific binding of a protein to ligand-functionalized sheets was also demonstrated. The synthetic flexibility and biocompatibility of peptoids provide a flexible and robust platform for integrating functionality into defined 2D nanostructures. In the later part of my talk, we describe the use of metal ions to construct two-dimensional hybrid films that have the ability to self-heal. Incubation of biomimetic peptoid polymers with specific divalent metal ions results in the spontaneous formation of uniform multilayers at the air-water interface. We anticipate that ease of synthesis and transfer of these two-dimensional materials may have many potential applications in catalysis, gas storage and sensing, optics, nanomaterial synthesis, and environmentally responsive scaffolds.

• 한국전기전자재료학회논문지
• /
• 제26권7호
• /
• pp.550-554
• /
• 2013

Carbon nanotubes (CNT) / polyvinylidene fluoride (PVDF) piezoelectric composite films for nanogenerator devices were fabricated by spray coating method. When the CNT/PVDF mixture solution passes through the spray nozzle with small diameter by the compressed nitrogen gas, electric charges are generated in the liquid by a triboelectric effect. Then randomly distributed ${\beta}$ phase PVDF film could be re-oriented by the electric field resulting from the accumulated electrical charges, and might be resulted in extremely one-directionally aligned ${\beta}$ phase PVDF film without additional electric field for poling. X-ray diffraction patterns were used to investigate crystal structure of the CNT/PVDF composite films. It was confirmed that they revealed extremely large portion of the ${\beta}$ phase PVDF crystalline in the film. Therefore we could obtain the poled CNT/PVDF piezoelectric composite films by the spray coating method without additional poling process.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.158-158
• /
• 2009

This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of $2.3{\times}10^{-3}cm^2V^{-1}s^{-1}$ was achieved, which is significantly different from that of pentacene films that are not aligned. The proposed OTFT devices with an ultrathin $HfO_2$ structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.

• 한국재료학회지
• /
• 제17권5호
• /
• pp.273-277
• /
• 2007

Vertically aligned Zinc Oxide rod arrays were grown by the self-assembly hydrothermal process on the GaN epitaxial layer which has a same lattice structure with ZnO. Zinc nitrate and DETA solutions are used in the hydrothermal process. The $(HfO_2)$ thin film was deposited on GaN and the patterning was made by the photolithography technique. The selective growth of ZnO rod was achieved with the patterned GaN substrate. The fabricated ZnO rods are single crystal, and have grown along hexagonal c-axis direction of (002) which is the same growth orientation of GaN epitaxial layer. The density and the size of ZnO rod can be controlled by the pattern. The optical property of ordered array of vertical ZnO rods will be discussed in the present work.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.230-230
• /
• 2012

Graphene have showed promising performance as electrodes of organic devices such as organic transistors, light-emitting diodes, and photovoltaic solar cells. In particular, among various organic materials of graphene-based organic devices, pentacene has been regarded as one of the promising organic material because of its high mobility, chemical stability. In the bottom-contact device configuration generally used as graphene based pentacene devices, the morphology of the organic semiconductors at the interface between a channel and electrode is crucial to efficient charge transport from the electrode to the channel. For the high quality morphology, understanding of initial stages of pentacene growth is essential. In this study, we investigate self-assembly of pentacene molecules on graphene formed on a 6H-SiC (0001) substrate by scanning tunneling microscopy. At sub-monolayer coverage, adsorption of pentacene molecules on epitaxial graphene is affected by $6{\times}6$ pattern originates from the underlying buffer layer. And the orientation of pentacene in the ordered structure is aligned with the zigzag direction of the edge structure of single layer graphene. As coverage increased, intermolecular interactions become stronger than molecule-substrate interaction. As a result, herringbone structures the consequence of higher intermolecular interaction are observed.

• 대한전자공학회논문지SD
• /
• 제41권6호
• /
• pp.1-7
• /
• 2004

본 논문에서는 2차원 양자 역학적 모델링 및 시뮬레이션(quantum mechanical modeling and simulation)으로써, 자기정렬 이중게이츠 구조(self-aligned double-gate structure)인 FinFET에 관하여 결합된 푸아송-슈뢰딩거 방정식(coupled Poisson and Schrodinger equations)를 셀프-컨시스턴트(self-consistent)한 방법으로 해석하는 수치적 모델을 제안한다. 시뮬레이션은 게이트 길이(Lg)를 10에서 80nm까지, 실리콘 핀 두께($T_{fin}$)를 10에서 40nm까지 변화시켜가며 시행되었다. 시뮬레이션의 검증을 위한 전류-전압 특성을 실험 결과값과 비교하였으며, 문턱 전압 이하 기울기(subthreshold swing), 문턱 전압 롤-오프(thresholdvoltage roll-off), 그리고 드레인 유기 장벽 감소(drain induced barrier lowering, DIBL)과 같은 파라미터를 추출함으로써 단채널 효과를 줄이기 위한 소자 최적화를 시행하였다. 또한, 고전적 방법과 양자 역학적 방법의 시뮬레이션 결과를 비교함으로써,양자 역학적 해석의 필요성을 확인하였다. 본 연구를 통해서, FinFET과 같은 구조가 단채널 효과를 줄이는데 이상적이며, 나노-스케일 소자 구조를 해석함에 있어 양자 역학적 시뮬레이션이 필수적임을 알 수 있었다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
• /
• pp.351-354
• /
• 2004

This thesis presents Bipolar transistor with SAVEN(Self-Aligned VErtical Nitride) structure as a high-speed device which is essential for high-speed system such as optical storage system or mobile communication system, and proposes 0.8${\mu}m$ BiCMOS Process which integrates LDD nMOS, LDD pMOS and SAVEN bipolar transistor into one-chip. The SPICE parameters of LDD nMOS, LDD pMOS and SAVEN Bipolar transistor are extracted, and comparator operating at 500MHz sampling frequency is designed with them. The small Parasitic capacitances of SAVEN bipolar transistor have a direct effect on decreasing recovery time and regeneration time, which is helpful to improve the speed of the comparator. Therefore the SAVEN bipolar transistor with high cutoff frequency is expected to be used in high-speed system.

• 전자공학회논문지A
• /
• 제33A권7호
• /
• pp.127-133
• /
• 1996

In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photoresist reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate form both sides of the main gate. The poly-Si channel layer below the offset oxide is protected form the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of oru new device is the offset region due to the offset oxide. our experimental reuslts show that the offset region, due to the photoresist reflow process, has been sucessfully obtained in order to fabricate the offset gated poly-Si TFTs. The maximum ON/OFF ratio occurs at the L$_{off}$ of 1.1${\mu}$m and exceeds 1X10$^{6}$.