• Title/Summary/Keyword: Self diffusion

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COSMIC RAY ACCELERATION AT COSMOLOGICAL SHOCKS: NUMERICAL SIMULATIONS OF CR MODIFIED PLANE-PARALLEL SHOCKS

  • KANG HYESUNG
    • Journal of The Korean Astronomical Society
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    • v.36 no.3
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    • pp.111-121
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    • 2003
  • In order to explore the cosmic ray acceleration at the cosmological shocks, we have performed numerical simulations of one-dimensional, plane-parallel, cosmic ray (CR) modified shocks with the newly developed CRASH (Cosmic Ray Amr SHock) numerical code. Based on the hypothesis that strong Alfven waves are self-generated by streaming CRs, the Bohm diffusion model for CRs is adopted. The code includes a plasma-physics-based 'injection' model that transfers a small proportion of the thermal proton flux through the shock into low energy CRs for acceleration there. We found that, for strong accretion shocks with Mach numbers greater than 10, CRs can absorb most of shock kinetic energy and the accretion shock speed is reduced up to $20\%$, compared to pure gas dynamic shocks. Although the amount of kinetic energy passed through accretion shocks is small, since they propagate into the low density intergalactic medium, they might possibly provide acceleration sites for ultra-high energy cosmic rays of $E\ll10^{18}eV$. For internal/merger shocks with Mach numbers less than 3, however, the energy transfer to CRs is only about $10-20\%$ and so nonlinear feedback due to the CR pressure is insignificant. Considering that intracluster medium (ICM) can be shocked repeatedly, however, the CRs generated by these weak shocks could be sufficient to explain the observed non-thermal signatures from clusters of galaxies.

Isolation, Identification and Optimal Culture Conditions of Streptomyces albidoflavus C247 Producing Antifungal Agents against Rhizoctonia solani AG2-2

  • Islam, Rezuanul;Jeong, Yong-Tae;Ryu, Yeon-Ju;Song, Chi-Hyun;Lee, Yong-Se
    • Mycobiology
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    • v.37 no.2
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    • pp.114-120
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    • 2009
  • Streptomyces albidoflavus C247 was isolated from the soil of the Gyeongsan golf course in Korea. Physiological, biochemical and 16S rDNA gene sequence analysis strongly suggested that the isolate belonged to Streptomyces albidoflavus. Preliminary screening revealed that the isolate was active against fungi and bacteria. Self-directing optimization was employed to determine the best combination of parameters such as carbon and nitrogen source, pH and temperature. Nutritional and culture conditions for the production of antibiotics by this organism under shake-flask conditions were also optimized. Maltose (5%) and soytone (5%) were found to be the best carbon and nitrogen sources for the production of antibiotics by S. albidoflavus C247. Additionally, 62.89% mycelial growth inhibition was achieved when the organism was cultured at $30^{\circ}C$ and pH 6.5. Ethyl acetate (EtOAc) was the best extraction solvent for the isolation of the antibiotics, and 100 ${mu}$/ml of EtOAc extract was found to inhibit 60.27% of the mycelial growth of Rhizoctonia solani AG2-2(IV) when the poison plate diffusion method was conducted.

Recent Development in the Rate Performance of Li4Ti5O12

  • Lin, Chunfu;Xin, Yuelong;Cheng, Fuquan;Lai, Man On;Zhou, Henghui;Lu, Li
    • Applied Science and Convergence Technology
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    • v.23 no.2
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    • pp.72-82
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    • 2014
  • Lithium-ion batteries (LIBs) have become popular electrochemical devices. Due to the unique advantages of LIBs in terms of high operating voltage, high energy density, low self-discharge, and absence of memory effects, their application range, which was primarily restricted to portable electronic devices, is now being extended to high-power applications, such as electric vehicles (EVs) and hybrid electrical vehicles (HEVs). Among various anode materials, $Li_4Ti_5O_{12}$ (LTO) is believed to be a promising anode material for high-power LIBs due to its advantages of high working potential and outstanding cyclic stability. However, the rate performance of LTO is limited by its intrinsically low electronic conductivity and poor $Li^+$ ion diffusion coefficient. This review highlights the recent progress in improving the rate performance of LTO through doping, compositing, and nanostructuring strategies.

A Study on Safety Assessment of Hydrogen Station (수소충전소의 안전성 평가 연구)

  • PYO, DON-YOUNG;KIM, YANG-HWA;LIM, OCK-TAECK
    • Transactions of the Korean hydrogen and new energy society
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    • v.30 no.6
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    • pp.499-504
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    • 2019
  • Due to the rapid spread and low minimum ignition energy of hydrogen, rupture is highly likely to cause fire, explosion and major accidents. The self-ignition of high-pressure hydrogen is highly likely to ignite immediately when it leaks from an open space, resulting in jet fire. Results of the diffusion and leakage simulation show that jet effect occurs from the leakage source to a certain distance. And at the end of location, the vapor cloud explosion can be occurred due to the formation of hydrogen vapor clouds by built-up. In the result, it is important that depending on the time of ignition, a jet fire or a vapor cloud explosion may occur. Therefore, it is necessary to take into account jet effect by location of leakage source and establish a damage minimizing plan for the possible jet fire or vapor cloud explosion. And it is required to any kind of measurements such as an interlock system to prevent hydrogen leakage or minimize the amount of leakage when detecting leakage of gas.

Properties of Recessed Polysilicon/Silicon($n^{+}$) - Silicon(P) Junction with Process Condition (공정조건에 따른 함몰된 다결정실리콘/실리콘($n^{+}$) - 실리콘(p) 접합의 특성)

  • 이종호;최우성;박춘배;이종덕
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.05a
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    • pp.152-153
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    • 1994
  • A recessed $n^{+}$-p junction diode with the serf-aligned structure is proposed and fabricated by using the polysilicon as an $n^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar device and the $n^{+}$ polysilicon emitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition $As^{+}$ dose for the doping of the polysilicon, and the annealing using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS. The eleotrical characteristics are analyzed in trims of the ideality factor of diode (n), contact resistance arid reverse leakage current. The $As_{+}$ dose for the formation of good junction is current. The $As^{+}$ dose for the formation of goodjunctions is about 1∼2${\times}$$10^{16}$$cm^{-2}$ at given RTA condition ($1100^{\circ}C$, 10 sec). The $n^{+}$-p structure is successfully applied to the self-aligned bipolar device adopting a single polysilicon technology.

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Simulation of Capacitively Coupled RF Plasma; Effect of Secondary Electron Emission - Formation of Electron Shock Wave

  • Park, Seung-Kyu;Kim, Heon-Chang
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.3
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    • pp.31-37
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    • 2009
  • This paper presents one and two dimensional simulation results with discontinuous features (shocks) of capacitively coupled rf plasmas. The model consists of the first two and three moments of the Boltzmann equation for the ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The local field and drift-diffusion approximations are not employed, and as a result the charged species conservation equations are hyperbolic in nature. Hyperbolic equations may develop discontinuous solutions even if their initial conditions are smooth. Indeed, in this work, secondary electron emission is shown to produce transient electron shock waves. These shocks form at the boundary between the cathodic sheath (CS) and the quasi-neutral (QN) bulk region. In the CS, the electrons emitted from the electrode are accelerated to supersonic velocities due to the large electric field. On the other hand, in the QN the electric field is not significant and electrons have small directed velocities. Therefore, at the transition between these regions, the electron fluid decelerates from a supersonic to a subsonic velocity in the direction of flow and a jump in the electron velocity develops. The presented numerical results are consistent with both experimental observations and kinetic simulations.

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Excursion-Set Modeling of the Splashback Mass Function and its Cosmological Usefulness (Splashback 질량함수의 Excursion-Set Modeling과 우주론적 유용성)

  • Ryu, Suho;Lee, Jounghun
    • The Bulletin of The Korean Astronomical Society
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    • v.46 no.2
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    • pp.44.3-45
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    • 2021
  • 일반화된 excursion set 이론과 자기 유사 구형 유입(Self-similar spherical infall) 모형에 기반하여 Splashback 질량함수에 대한 해석적 단일 매개변수 모델을 착안하였다. Planck/WMAP7 관측결과를 토대로 구축된 EREBOS N-Body 시뮬레이션의 수치적 결과의 해석적 모델을 이용한 회귀분석을 통해 단일 매개변수이자 Splashback 경계의 확산적 특성을 수치화하는 확산계수(Diffusion Coefficient)의 추정치를 계산하였다. 계산된 확산계수를 적용한 해석적 모델과 수치적 결과가 5 ≤ M/(1012h-1 M) < 103의 질량범위에서 매우 근접히 일치하는 것을 보였으며 Baysian and Akaike Information Criterion 검정을 통해 0.3 ≤ z ≤ 3의 범위에서 기존의 모델들보다 본 모델이 선호 돼야함을 확인하였다. 또한 확산계수가 적색편이에 대하여 선형진화에 근접한 변화를 보임을 발견하였으며, 특정 임계 적색편이(zc)를 기준으로 확산계수가 0에 수렴함을 발견하였다. 더 나아가 두 Planck모델과 WMAP7모델에서 도출된 확산계수는 서로 상당한 차이를 보였다. 이 결과는 암흑물질 헤일로의 splashback 질량함수가 z ≥ zc에서 매개변수가 없는 온전한 해석적 모델로 설명되고 zc가 독립적으로 우주의 초기조건을 독립적으로 특정지을 수 있는 가능성을 지님을 시사한다. 이 초록은 The Astrophysical Journal의 Ryu & Lee 2021, ApJ, 917, 98 (arxiv:2103.00730) 논문을 바탕으로 작성되었다.

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Factors Affecting HR Analytics Adoption: A Systematic Review Using Literature Weighted Scoring Approach

  • Suchittra Pongpisutsopa;Sotarat Thammaboosadee;Rojjalak Chuckpaiwong
    • Asia pacific journal of information systems
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    • v.30 no.4
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    • pp.847-878
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    • 2020
  • In the era of disruptive change, a data-driven approach is vital to Human Resource Management (HRM) of any leading organization, for it is used to gain a competitive advantage. HR analytics (HRA) has emerged as innovative technologies since advanced analytics, i.e., predictive or prescriptive analytics, were widely used in the High Performing Organizations (HPOs). Therefore, many organizations elevate themselves to become HPOs through Data Science on the "people side." This paper proposes a systematic literature review using the Literature Weighted Scoring (LWS) to develop a conceptual framework based on three adoption theories, which are the Technology-Organization-Environment (TOE), Diffusion of Innovation (DOI), and Unified Theory of Acceptance and Use of Technology (UTAUT). The results show that a total of 13 theory-derived factors are determined as influential factors affecting HRA adoption, and the top three factors are "Quantitative Self-Efficacy," "Top Management Support," and "Data Availability." The conceptual framework with hypotheses is proposed to provide a foundation for further studies on organizational HRA adoption.

Selective Atomic Layer Deposition of Co Thin Films Using Co(EtCp)2 Precursor (Co(EtCp)2프리커서를 사용한 Co 박막의 선택적 원자층 증착)

  • Sujeong Kim;Yong Tae Kim;Jaeyeong Heo
    • Korean Journal of Materials Research
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    • v.34 no.3
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    • pp.163-169
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    • 2024
  • As the limitations of Moore's Law become evident, there has been growing interest in advanced packaging technologies. Among various 3D packaging techniques, Cu-SiO2 hybrid bonding has gained attention in heterogeneous devices. However, certain issues, such as its high-temperature processing conditions and copper oxidation, can affect electrical properties and mechanical reliability. Therefore, we studied depositing only a heterometal on top of the Cu in Cu-SiO2 composite substrates to prevent copper surface oxidation and to lower bonding process temperature. The heterometal needs to be deposited as an ultra-thin layer of less than 10 nm, for copper diffusion. We established the process conditions for depositing a Co film using a Co(EtCp)2 precursor and utilizing plasma-enhanced atomic layer deposition (PEALD), which allows for precise atomic level thickness control. In addition, we attempted to use a growth inhibitor by growing a self-assembled monolayer (SAM) material, octadecyltrichlorosilane (ODTS), on a SiO2 substrate to selectively suppress the growth of Co film. We compared the growth behavior of the Co film under various PEALD process conditions and examined their selectivity based on the ODTS growth time.

Preparation of the SiO2 Films with Low-Dit by Low Temperature Oxidation Process (저온 산화공정에 의해 낮은 Dit를 갖는 실리콘 산화막의 제조)

  • Jeon, Bup-Ju;Jung, Il-Hyun
    • Applied Chemistry for Engineering
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    • v.9 no.7
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    • pp.990-997
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    • 1998
  • In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.

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