• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.10
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• pp.2034-2043
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• 2002

The process design to produce a near net shape home-appliance compressor component using semi-solid die casting process is performed. In order to obtain a good component without defects such as liquid segregation and porosity, the relationship between pressure and time, and plunger tip displacement and injection velocity are proposed with repeated trial and error. The effect of the velocity variation in the process parameters on liquid segregation and extraction is investigated to produce the aluminum frame part(a kind of compressor part) with good mechanical properties. The mechanical characteristic of semi-solid die casting formed parts for AlSi7Mg0.65r(A357) and AlSi17Cu4Mg(A390) are investigated with a view to minimizing the occurrence of defects. To investigate of application possibility at industry field, A380 aluminum alloy with 8∼9% silicon contents used for the squeeze casting process. The obtained mechanical properties is compared with semi-solid die casting.

• Metals and materials international
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• v.24 no.6
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• pp.1394-1402
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• 2018

This study investigates the mechanism of MnS precipitation on $Al_2O_3-SiO_2$ inclusions during the solidification of non-oriented silicon steel, especially the influence of the phase structures and sizes of the oxides on the MnS precipitation, by scanning electron microscopy and transmission electron microscopy coupled with energy dispersive spectrometry. The investigation results show that MnS tends to nucleate on submicron-sized $Al_2O_3-SiO_2$ inclusions formed by interdendritic segregation and that it covers the oxides completely. In addition, MnS can precipitate on micron-sized oxides and its precipitation behavior is governed by the phase structure of the oxides. The MnS embryo formed in a MnO-containing oxide can act as a substrate for MnS precipitation, thus permitting further growth via diffusion of solute atoms from the matrix. MnS also precipitates in a MnO-free oxide by the heterogeneous nucleation mechanism. Furthermore, MnS is less prone to precipitation in the $Al_2O_3$-rich regions of the $Al_2O_3-SiO_2$ inclusions; this can be explained by the high lattice disregistry between MnS and $Al_2O_3$.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• Korean Journal of Metals and Materials
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• v.50 no.12
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• pp.897-905
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• 2012

Directional solidification experiments were carried out in a hypoeutectic Al-11.3Si-3.5Cu system to investigate the microstructural evolution with the solidification rate. At a fixed temperature gradient, a dendritic microstructure was observed at a constant speed of more than $25{\mu}ms^{-1}$, a cellular interface developed at $5{\mu}ms^{-1}$ and the growth rate of $0.5{\mu}ms^{-1}$ led to the stability of the planar interface. The results revealed that primary silicon phases formed among cells, even though the studied Al-Si alloy system formed the composition within a hypoeutectic silicon composition. This suggests that the liquid concentration among cells during solidification reached a higher concentration, i.e., the eutectic concentration. It is, however, interesting that primary silicon phases did not form during a dendritic growth of more than $25{\mu}ms^{-1}$. These experimental observations are explained using the theoretical models on the interface temperatures.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.407-414
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• 1996

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence of Si-H bonds on Si(100) surfaces enhances the structural relaxation of Si-O-Si bonds due to a charge transfer from Si-Si back bonds. In the heteroepitaxial growth of a Si/Ge/Si(100) system, H atoms suppress the segregation of Ge atoms into Si overlayers since the exchange of Ge atoms with Si atoms bound with H must be accompanied with breaking of Si-H bonds. However, 3-dimensional island growth is also promoted by atomic H irradiation, which is considered to result from the suppression of surface migration of adsorbed reaction species and from the lowering of step energies by the H termination of dangling bonds.

• Journal of Korea Foundry Society
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• v.12 no.1
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• pp.25-31
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• 1992

The effects of Si and austempering temperature on the fracture characteristics and the microstructures of austempered ductile irons were investigated. As Si content increased from 2.28% to 3.0%, the precipitation of carbides during bainitic transformation and was suppressed the amount of retained austenite increased resulting in the increase in the fracture toughness. It is believed that the high Si limited the formation of martensite in the microstructure and minimized the segregation of the other elements at cell boundaries. But in samples with too high Si content as 3.3%, the formation of islands of free ferrite in the bainitic structures was observed and the fracture toughness was measured to have degraded.

• Journal of the Korean institute of surface engineering
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• v.27 no.4
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• pp.234-240
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• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.216-216
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• 2012

The purpose of this work is to investigate a back surface field (BSF) on variety wafer resistivity for industrial crystalline silicon solar cells. As pointed out in this manuscript, doping a crucible grown Cz Si ingot with Ga offers a sure way of eliminating the light induced degradation (LID) because the LID defect is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation along the Ga doped Cz Si ingot. Because of the resistivity variation the Cz Si wafer from different locations has different performance as know. In the light of B doped wafer, we made wider resistivity in Si ingot; we investigated the how resistivities work on the solar cells performance as a BSF quality.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1069-1072
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• 2003

Germane-sillicide phase formation on S $i_{0.25}$G $e_{0.75}$ with Ni 100$\square$, Co 10$\square$/Ni 100$\square$ and Ni 50$\square$/Co 10$\square$/Ni 50$\square$ layer was studied by sheet resistance and Field Emission Scanning Electron Microscopy(FESEM). Thermal stability of nickel germane-silicide is found to be improved by sputtering Ni/Co/Ni on the SiGe. After annealing at 600, 650, $700^{\circ}C$, 30min., the nickel germane-silicide formed by Ni 50$\square$/Co 10$\square$/Ni 50$\square$ layer achieved a sheet resistance less than 17ohms/sq.(almost the same to the value before furnace annealing for 30min.) , while the process of the other two ways result in high sheet resistance and even sheet resistance fail due to Ge segregation.ion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.708-711
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• 1999

The Cu/Ni/Au lamellar structure is extensively used as an under bump metallization on silicon file, and on printed circuit board(PCB) pads. Ni is plated Cu by either electroless Ni plating, or electrolytic Ni plating. Unlike the electrolytic Ni plating, the electroless Ni plating does not deposit pure Ni, but a mixture of Ni and phosphorous, because hypophosphite Is used in the chemical reaction for reducing Ni ions. The fracture crack extended at the interface between solder balls of plastic ball grid (PBGA) package and conducting pads of PCB. The fracture is duets to segregation at the interface between Ni$_3$Sn$_4$intermetallic and Ni-P layer. The XPS diffraction results of Cu/Ni/Au results of CU/Ni/AU finishs showed that the Ni was amorphous with supersaturated P. The XPS and EDXA results of the fracture surface indicated that both of the fracture occurred on the transition lesion where Sn, P and Ni concentrations changed.