• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.2-287.2
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• 2016

Silicon has considerably good characteristics on electron, hole mobility and its price. With 2-D sinlge-layer Graphene/n-Si heterojunction solar cell shows that in one sun condition exhibit power conversion efficiency(PCE) of 10.1%. This photovoltaic effect was achieved by applying gate voltage to the Schottky junction of the heterostructure solar cell. Energy band diagram shows that Schottky barrier between Si and graphene can be adjust by the external electric field. because of the fermi level of the graphene can be changed by external gate voltage, we can control the Schottkky barrier of the heterostructure solar cell. The ratio between generated power of solar cell and consumption electrical power is remarkable. Since we use the graphene as the top gate electrode, most of the sun light can penetrate into the active area.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.731-736
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• 2014

An organic junction transistor with a vertical structure based on an active layer of poly(3-hexylthiophene) was fabricated by facile micro-contact printing combined with the Langmuir-Schaefer technique, without conventional e-beam or photo-lithography. Direct printing and subsequent annealing of Au-nanoparticles provided control over the thickness of the Au electrode and hence control of the electrical contact between the Au electrode and the active layer, ohmic or Schottky. The junction showed similar current-voltage characteristics to an NPN-type transistor. Current through the emitter was simply controllable by the base voltage and a high transconductance of ~0.2 mS was obtained. This novel fabrication method can be applied to amplifying or fast switching organic devices.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.200-203
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• 2007

Devices of junction barrier schottky(JBS) structure using 4H-SiC substrates with wide energy band gaps was designed and fabricated. As a measurement results, the device of reverse I-V characteristics was shown as more than 1000 V, its design optimum length of p-grid was $3{\mu}m$ space. In this paper, I-V characteristics was modeled by using of device fabricated process conditions parameters and it was extracted that the I-V property parameters, and it was compared and analyzed with between device parameters and model parameters.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.8
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• pp.47-54
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• 2012

In this paper, we have fabricated the Schottky diode for THz applications by heterogeneous resist patterning method. The Schottky diode was developed using electron beam lithography and photolithography to connect the anode and the anode pad for a simple process. The measured performance of developed Schottky diode are $11.2{\Omega}$ of series resistance, 25.96 fF of junction capacitance, 1.25 of ideality factor and 547.6 GHz of cut-off frequency.

• Journal of Environmental Science International
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• v.29 no.1
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• pp.95-108
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• 2020

Silver nanoparticles were loaded onto g-C₃N₄ (CN) with a nanoroll-type morphology (Ag/CN) synthesized using a co-polymerization method for highly selective conversion of toxic nitrobenzene to industrially-valuable aminobenzene. Scanning electron microscopy and high-resolution transmission electron microscopy (HRTEM) images of Ag/CN revealed the generation of the nanoroll-type morphology of CN. Additionally, HRTEM analysis provided direct evidence of the generation of a Schottky barrier between Ag and CN in the Ag/CN nanohybrid. Photoluminescence analysis and photocurrent measurements suggested that the introduction of Ag into CN could minimize charge recombination rates, enhancing the mobility of electrons and holes to the surface of the photocatalyst. Compared to pristine CN, Ag/CN displayed much higher ability in the photocatalytic reduction of nitrobenzene to aminobenzene, underscoring the importance of Ag deposition on CN. The enhanced photocatalytic performance and photocurrent generation were primarily ascribed to the Schottky junction formed at the Ag/CN interface, greater visible-light absorption efficiency, and improved charge separation associated with the nanoroll morphology of CN. Ag would act as an electron sink/trapping center, enhancing the charge separation, and also serve as a good co-catalyst. Overall, the synergistic effects of these features of Ag/CN improved the photocatalytic conversion of nitrobenzene to aminobenzene.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.1
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• pp.157-165
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• 2001

We analyzed the electrical characteristics of platinum silicide schottky junction to develope the voltage swing in Integrated Schottky Logic gates, and simulated the characteristics with the programs in this junctions. Simulation programs for analytic characteristics are the Medichi tool for device structure, Matlab for modeling and SUPREM V for fabrication process. The silicide junctions consist of PtSi and variable silicon substrate concentrations in ISL gates. Input parameters for simulation characteristics were the same conditions as process steps of the device farications process. The analitic electrical characteristics were the turn-on voltage, saturation current, ideality factor in forward bias, and has shown the results of breakdown voltage between actual characteristics and simulation characteristics in reverse bias. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height were decreased but saturation current and ideality factor were increased by substrates increased concentration variations.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.3
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• pp.33-39
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• 1983

New Schottky devices with thin stepped oxide layer (about 1000 ${\AA}$) along the edge of metal-semiconductor junction have been designed and fabricated. The breakdown voltages of these diodes have been compared with those of conventional metal overlap and P guard ring Schottky diode structures. Thin stepped oxide layer has been grown by the process of T.C.E. oxidation. In order to compare and demonstrate the improved down phenomena of these devices, conventional metal overlap diode and P guard ring which have the same dimension with new devices have also been integrated in a same New Schottty devices structured with thin stepped oxide layer have shown significant improvement in breakdown phenomena compared with conventional diodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.377-377
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• 2014

We demonstrate the high temperature-dependent electrical behavior at 2D multilayer MoS2 transistor. Our previous reports explain that the extracted field-effect mobility of good device was inversely proportional to the increase of temperature. Because scattering mechanism is dominated by phonon scattering at a well-designed MoS2 transistor, having, low Schottky barrier. However, mobility at an immature our $MoS_2$ transistor (${\mu}m$ < $10cm^2V^{-1}s^{-1}$) is proportional to the increase temperature. The existence of a big Schottky barrier at $MoS_2-Ti$ junction can reduce carrier transport and lead to lower transistor conductance. At high temperature (380K), the field-effect mobility of multilayer $MoS_2$ transistor increases from 8.93 to $16.9cm^2V^{-1}sec^{-1}$, which is 2 times higher than the value at room temperature. These results demonstrate that carrier transport at an immature $MoS_2$ with a high Schottky barrier is mainly affected by thermionic emission over the energy barrier at high temperature.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1581-1584
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• 2008

In dual-polycide-gate structure with butting contact, net doping concentration of polysilicon was decreased due to overlap between $n^+$ and $p^+$ and lateral dopant diffusion in silicide/polysilicon layers. The generation of parasitic Schottky diode in butting contact region is attributed both to the $CoSi_2$-loss due to $CoSi_2$ agglomeration and to the decrease in net doping concentration of polysilicon layer. Parasitic Schottky diode reduces noise margin of sense amplifier in DDI DRAM, which causes column fail. The column fail could be reduced by physical isolation of $n^+/p^+$ polysilicon junction or suppressing $CoSi_2$ agglomeration by using nitrogen implantation into $p^+$ polysilicon before $CoSi_2$ formation.