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Development of Schottky Diode for THz Applications using Heterogeneous Resist Patterning  

Han, Min (Millimeter-wave INnovation Technology research center, Dongguk University)
Choi, Seok-Gyu (Millimeter-wave INnovation Technology research center, Dongguk University)
Lee, Sang-Jin (Millimeter-wave INnovation Technology research center, Dongguk University)
Baek, Tae-Jong (Millimeter-wave INnovation Technology research center, Dongguk University)
Ko, Dong-Sik (Millimeter-wave INnovation Technology research center, Dongguk University)
Kim, Jung-Il (Korea Electrotechnology Research Institute)
Kim, Geun-Ju (Korea Electrotechnology Research Institute)
Jeon, Seok-Gy (Korea Electrotechnology Research Institute)
Yoon, Jin-Seob (Department of computer aided system, Seoil College)
Rhee, Jin-Koo (Millimeter-wave INnovation Technology research center, Dongguk University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.49, no.8, 2012 , pp. 47-54 More about this Journal
Abstract
In this paper, we have fabricated the Schottky diode for THz applications by heterogeneous resist patterning method. The Schottky diode was developed using electron beam lithography and photolithography to connect the anode and the anode pad for a simple process. The measured performance of developed Schottky diode are $11.2{\Omega}$ of series resistance, 25.96 fF of junction capacitance, 1.25 of ideality factor and 547.6 GHz of cut-off frequency.
Keywords
Schottky diode; THz application;
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