• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.471-476
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• 2003

Au/oxide/n-InP Schottky diodes were fabricated from heteroepitaxial InP layers grown on GaAs substrates by the metalorganic vapor phase epitaxy (MOVPE) method from a new combination of source materials: ethyldimethylindium (EDMIn) and tertiarybutylphosphine (TBP). Anodic oxidation technique by using a solution of 10 g of ammonium pentaborate in 100 cc of ethylene glycole as the electrolyte was used to deposit a thin oxide layer. The barrier heights determined from three different techniques, current-voltage (I-V) measurements at room temperature and in the temperature range of 273 K - 373 K, and room temperature capacitance-voltage (C-V) measurements are in good agreement, 0.7 - 0.9 eV which is considerably high as compared to the 0.45 - 0.55 eV in Au/n-InP Schottky diode without a Passivation layer. The ideality factors of 1.1 - 1.3 of the Schottky diodes were also determined from the I-Y characteristics. Deep level transient spectroscopy (DLTS) studies revealed only one shallow electron state at 92.6 meV below the bottom of the conduction band and no deep state in the heteroepitaxial InP layers grown from EDMIn and TBP.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권7호
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• pp.388-393
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• 2000

Hydrogen-sensing behaviors of Pd- and Pt-SiC Schottky diodes, fabricated on the same SiC substrate, have been systematically compared and analyzed as a function of hydrogen concentration and temperature by I-V and$\DeltaI-t$ methods under steady-state and transient conditions. The effects of hydrogen adsorption on the device parameters such as the barrier height are investigated. The significant differences in their hydrogen sensing characteristics have been examined in terms of sensitivity limit, linearity of response, response rate, and response time. For the investigated temperature range, Pd-SiC Schottky diode shows better performance for H2 detection than Pt-SiC Schottky diode under the same testing conditions. The physical and chemical mechanisms responsible for hydrogen detection are discussed. Analysis of the steady-state reaction kinetics using I-V method confirmed that the atomistic hydrogen process is responsible for the barrier height change in the diodes.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.205-208
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• 2001

Schottky barrier diodes are fabricated on a intrinsic GaN(4${\mu}{\textrm}{m}$) epitaxial structure grown by rf plasma molecular beam epitaxy (MBE) on sapphire substrates. First, We make Ohmic electrodes (Ti/Al/Ti/Au) by evaporator. Next, we contact RuO$_2$ by dipping in the solution (RuCl$_3$.HClO$_4$), and then we deposit Ni/Au on the surface of RuO$_2$ by evaporator. We study the electrical characteristics of GaN Schottky barrier diodes made by these methods. Measurements are C-V, I-V, SEM, EDX, and XRD for the characteristics of devices. Thickness of RuO$_2$ layer depends on supplied voltage and dipping time. Device of thinner RuO$_2$ layer have a good Schottky characteristics compare with device of thicker RuO$_2$ layer

• 센서학회지
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• 제17권6호
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• pp.414-417
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• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.367-371
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• 2018

1,200 V class junction barrier schottky (JBS) diodes and schottky barrier diodes (SBD) were simultaneously fabricated on the same 4H-SiC wafer. The resulting diodes were characterized at temperatures from room temperature to 473 K and subsequently compared in terms of their respective I-V characteristics. The parameters deduced from the observed I-V measurements, including ideality factor and series resistance, indicate that, as the temperature increases, the threshold voltage decreases whereas the ideality factor and barrier height increase. As JBS diodes have both Schottky and PN junction structures, the proper depletion layer thickness, $R_{on}$, and electron mobility values must be determined in order to produce diodes with an effective barrier height. The comparison results showed that the JBS diodes exhibit a larger effective barrier height compared to the SBDs.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2007년도 추계학술대회논문집
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• pp.77-81
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• 2007

Pentacene was dissolved in N-methyspyrrolidone (NMP) and mixed with poly(3,4-ethylenedioxythiophene), poly(styrenesulfonate) (PEDOT:PSS). The solution color changed from deep purple to intense yellow. As the dissolution time increased, visible absorption decreased and ultraviolet (UV) absorption increased. PEDOT:PSS or Pentacene-PEDOT:PSS was spin-coated to control the layer thickness. Three-layered Schottky diodes consisting of Al, PEDOT:PSS or PEDOT:PSS-pentacene, and Au with thickness of 300nm, respectively, were fabricated. The current densities of $4.8{\mu}A/cm^2$ at 2.5MV/m and $660{\mu}A/cm^2$ at 1.9MV/m were obtained for the Au/PEDOT:PSS/Al and Au/Pentacene-PEDOT:PSS/Al Schottky diodes, respectively. The current density of the Schottky diode was enhanced by about two orders of magnitude by doping pentacene to PEDOT:PSS.

• 한국전자파학회논문지
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• 제19권8호
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• pp.814-819
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• 2008

본 논문에서는 두 개의 초광대역 전이 구조를 이용한 다이오드 검파기의 설계 과정을 처음으로 소개하고, 이를 제작하여 측정한 결과를 소개한다. 제안된 검파기에서는 두 개의 초광대역 전이 구조를 입 출력단의 정합 회로로 사용하였다. 검파기 회로 구현시 일반 쇼트키 다이오드 및 무 바이어스 쇼트키 다이오드를 사용하여 각각 검파기를 구현하고, 그 성능을 비교하였다. 일반 쇼트키 다이오드를 사용하여 제작된 검파기는 11 GHz에서 20 GHz까지의 주파수 대역에서 10 dB 이상의 반사 손실을 가지며, 제작된 검파기의 감도는 30 mV/mW이었다. 또한, 무 바이어스 쇼트키 다이오드를 사용한 검파기의 경우, 측정된 검파기의 감도는 300 mV/mW로서 훨씬 증가하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.90-92
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• 2001

Carbon monoxide-sensing behavior of Pt-SiC Schottky diodes. fabricated on the same SiC substrate have been systematically compared and analyzed as a function of carbon monoxide concentrati on and temperature by I-V and ${\Delta}I$-t methods under steady-state and transient condition. Adsorption activation energies of Carbon monoxide on the surface of Pt-SiC Schottky diodes is investigated in a high temperature range ($100{\sim}500^{\circ}C$). The optimal temperature for behavior sensing is $300^{\circ}C$ and saturation concentration is 200 ppm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.440-442
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• 2000

We have successfully fabricated SiC Schottky diodes using Al, Ni, Ti metallization systems. Schottky barrier height and other parameter have been measured by using I-V and C-V technique. The measured barreir heights depend on the metal and measurement techniques used. The barrier heights were 1.85eV(Al), 1.63eV(Ni), 0.97eV(Ti). The Ideality factors were 1.16(Al), 1.07(Ni), 1.05(Ti). Thermal stress tests were performed.

• 대한전기학회논문지
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• 제41권5호
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• pp.573-576
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• 1992

Novel A1-Si Schottky diodes with self-aligned guard rings have been proposed and fabricated using RIE(Reactive Ion Etch). The breakdown voltage of the Schottky diode with the guard ring has been drastically increased to 200V or more in comparison with 46V for the metal overlap Schottky diode.