Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2000.11c
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- Pages.440-442
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- 2000
Characterization of Schottky diodes fabricated by various metals on SiC thin film grown by ICP-CVD
ICP-CVD로 성장된 SiC 박막위에 다양한 금속으로 제작된 Schottky diode의 특성 분석
- Ko, Suk-Il (Dept. of Electrical Eng., Myongji University) ;
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Kim, Yong-Sang
(Dept. of Electrical Eng., Myongji University)
- Published : 2000.11.25
Abstract
We have successfully fabricated SiC Schottky diodes using Al, Ni, Ti metallization systems. Schottky barrier height and other parameter have been measured by using I-V and C-V technique. The measured barreir heights depend on the metal and measurement techniques used. The barrier heights were 1.85eV(Al), 1.63eV(Ni), 0.97eV(Ti). The Ideality factors were 1.16(Al), 1.07(Ni), 1.05(Ti). Thermal stress tests were performed.
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