Anodically Oxidized InP Schottky Diodes Grown From EDMIn and TBP on GaAs Substrates |
유충현 (청주대학교 정보통신공학부) |
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GaNAs/GaInAs short-period superlattice quantum well structures grown by MOCVD using TBAs and DMHy
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DOI ScienceOn |
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EDMIn, TBP와 TBAs를 이용한 InP/GaAs와 GaInAs/GaAs의 MOVPE 성장
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과학기술학회마을 |
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Buffer layer effects on residual stress in InP on Si substrates
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DOI |
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A study of gold/n-InP contacts
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DOI ScienceOn |
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Heteroepitaxial growth and characterization of InP on Si substrates
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DOI |
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급속 열산화 방법으로 형성된 InP 자연 산화막의 특성
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7 |
밀리미터파 InP 소자 기술
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과학기술학회마을 |
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A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate
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DOI |
9 |
Fermi level position at metal-semiconductor interfaces
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10 |
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11 |
Characterization of InP/GaAs/Si structures grown by atmospheric chemical vapor deposition
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DOI |
12 |
A comparison of Pd Schottky contacts on InP, GaAs and Si
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DOI ScienceOn |
13 |
Ethyldimethylindium for the growth of InGaAs-GaAs strained-layer lasers by metalorganic chemical vapor deposition
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DOI |
14 |
Electrical characteristics of Au/Ti-(n-type) InP Schottky diodes
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DOI ScienceOn |