• Journal of Convergence Society for SMB
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• v.2 no.1
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• pp.25-31
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• 2012

Recently Wireless Communication technologies are widely used in Small And Medium Business fields. Wireless mesh networks have been studied as the next generation technology to solve problem of conventional wireless networks. Wireless mesh network uses a 802.11 when make up of network. mesh clients occurs Hard handover moving between ones. This increases the handover latency of the network mobility is a very great issues. Consequently, this paper propose a channel information previously methods to reduce the handover latency selective channels. Proposed scheme accounts for more than 90% of the probe delay to minimize the client had to move the mesh based on the old channel to retrieve information. Through simulation, the proposed scheme had shorter handover delay time than transitional full scan and selective scan. Through results of evaluation, the suggest PCISS scheme more fast 6.5% than transitional scheme.

• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.261-271
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• 2017

Environment-friendly $(K,Na)NbO_3-based$ (KNN) lead-free piezoelectric materials have been studied extensively in the past decade. Significant progress has been made in this field, manifesting competitive piezoelectric performance with that of lead-based, for specific application scenarios. Further understanding of the relationship between high piezoelectricity and microstructure or more precisely, ferroelectric domain structure, domain wall pinning effect, domain wall conduction and local polarization switching underpins the continuous advancement of piezoelectric properties, with the help of piezoresponse force microscopy (PFM). In this review, we will present the fundamentals of scanning probe microscopy (SPM) and its cardinal derivative in piezoelectric and ferroelectric world, PFM. Some representative operational modes and a variety of recent applications in KNN-based piezoelectric materials are presented. We expect that PFM and its combination with some newly developed technology will continue to provide great insight into piezoelectric materials and structures, and will play a valuable role in promoting the performance to a new level.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.400-403
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• 2012

$Cu_2ZnSnSe_4$(CZTSe) is emerged as a promising material for thin-film solar cells because of non-toxic, inexpensive and earth abundant more than $Cu(In,Ga)Se_2$ materials. For fabricating compound semiconductor thin-film solar cells, CdS is widely used for a buffer layer which fabricated by a chemical bath deposition method (CBD). Through the experiment, we controlled deposition temperature and mol ratio of solution conditions to find the proper grain 크기 and exact composition. The optimum CdS layers were characterized in terms of surface morphology by using a scanning electron microscope (SEM) and atomic force microscope (AFM). The optimized CdS layer process was applied on CZTSe thin-films. The thickness of buffer layer related with device performance of solar cells which controlled by deposition time. Local surface potential of CdS/CZTSe thin-films was investigated by Kelvin probe force microscopy (KPFM). From these results, we can deduce local electric properties with different thickness of buffer layer on CZTSe thin-films. Therefore, we investigated the effect of CdS buffer layer thickness on the CZTSe thin-films for decreasing device losses. From this study, we can suggest buffer layer thickness which contributes to efficiencies and device performance of CZTSe thin-film solar cells.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.47.1-47.1
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• 2011

We report on a direct measurement of two-dimensional chemical and electrical distribution on the surface of photovoltaic Cu(In,Ga)$Se_2$ thin-films using a nano-scale spectroscopic and electrical characterization, respectively. The Raman measurement reveals non-uniformed surface phonon vibration which comes from different compositional distribution and defects in the nature of polycrystalline thin-films. On the other hand, potential analysis by scanning Kelvin probe force microscopy shows a higher surface potential or a small work function on grain boundaries of the thin-films than on the grain surfaces. This demonstrates the grain boundary is positively charged and local built-in potential exist on grain boundary, which improve electron-hole separation on grain boundary. Local electrical transport measurements with scanning probe microscopy on the thin-films indicates that as external bias is increases, local current is started to flow from grain boundary and saturated over 0.3 V external bias. This accounts for carrier behavior in the vicinity of grain boundary with regard to defect states. We suggest that electron-hole separation at the grain boundary as well as chemical and electrical distribution of polycrystalline Cu(In,Ga)$Se_2$ thin-films.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.149-154
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• 2005

We fabricated Ni/Co(or Co/Ni) composite silicide layers on the non-patterned wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\~}1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the poly silicon inversion due to fast metal diffusion lead to decrease silicide thickness. Our results imply that we should consider the serious inversion and fast transformation in designing and process f3r the nano-height fully cobalt nickel composite silicide gates.

• Journal of Convergence for Information Technology
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• v.12 no.2
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• pp.149-156
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• 2022

In this paper, it was attempted to form a titanium (Ti: Titanium) thin film using the atmospheric pressure plasma process technology for the conductor, which is the main component of the optical sensor. The atmospheric plasma equipment was remodeled. A 4-inch Ti target for sputter was etched using CF4 gas, and the by-product was coated on a glass sample. These by-products were formed up to about 2 cm, and could be divided into 15 areas according to color. Surface shape and constituent elements were analyzed using scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS), respectively. Electrical properties using 4-point probe equipment were also measured. If the process is performed by positioning the sample at about 4.5 mm to 5 mm from the target, a uniform Ti thin film will be deposited. However, it was found that the thin film contained a significant amount of fluorine, which greatly affects the electrical properties of the thin film. Therefore, additional experiments and studies should be performed to remove or minimize fluorine during deposition.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.865-869
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• 2002

We investigated the reaction stability of titanium, cobalt and their bilayer films with side-wall spacer materials of SiO$_2$ for the salicide process. We prepared Ti 350 $\AA$, Co 150 $\AA$, Co 150 $\AA$/Ti 100 $\AA$ and Ti 100 $\AA$/Co 150 $\AA$ films on 1000 $\AA$-thick thermally grown SiO$_2$ substrates, respectively. Then the samples were rapid thermal annealed at the temperatures of $500^{\circ}C$, $600^{\circ}C$, and $700^{\circ}C$ for 20 seconds. We characterized the sheet resistance of the metallic layers with a four-point probe, surface roughness with scanning probe microscope, residual phases with an Auger depth profilometer, phase identification with a X-ray diffractometer, and cross-sectional microstructure evolution with a transmission electron microscope, respectively. We report that Ti reacted with silicon dioxide spacers above $700^{\circ}C$, Co agglomerated at $600^{\circ}C$, and Co/Ti, Ti/Co formed CoTi compound requiring a special wet process.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.12
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• pp.145-150
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• 2000

Micro punching is one of general methods to fabricate simple holes such as permanent ink-jet printer nozzles. A thin punch, that is need for micro punching, usually has been obtained by mechanical machining. There are some method to obtain a thin punch from a cylindrical rod, e.g., microgrinding and WEDG (Wire Electro-Discharge Grinding). Inefficiently, only one punch can be obtained from these machining methods. In contrast with these methods, many punches can be fabricated simultaneously by electrochemical process. Electrochemical process has usually aimed to obtain very sharp probe for atomic force microscopy (AFM) or scanning tunneling microscopy (STM), and it has not been considered the whole shape of a probe in spite of good merits. In this paper, an ultrathin punch with a tapered shape and a cylindrical tip is newly fabricated by electrochemical process.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.169-172
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• 2008

We attempted to fabricate carbon nanotube field effect transistor (CNT-FET) using single walled carbon nanotube(SWNT) on the heavily doped Si substrate used as a bottom gate, source and drain electrode were fabricated bye-beam lithography on the 500 nm thick $SiO_2$ gate dielectric layer. We investigated electrical and physical properties of this CNT-FET using Scanning Probe Microscope(SPM) and conventional method based on tungsten probe tip technique. The gate length of CNT-FET was 600 nm and the diameter of identified SWNT was about 4 nm. We could observed gating effect and typical p-MOS property from the obtained $V_G-I_{DS}$ curve. The threshold voltage of CNT-FET is about -4.6V and transconductance is 47 nS. In the physical aspect, we could identified SWNT with phase mode of SPM which detecting phase shift by force gradient between cantilever tip and sample surface.

• 한국연소학회:학술대회논문집
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• 2012.11a
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• pp.107-109
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• 2012

In Korean coal power plants, rising coal prices have recently led to the rapid utilization of low lank coals such as sub-bituminous coal with low calorific values and low ash fusion temperatures. Using these coals beyond the design range has resulted in important issues including slagging and fouling, which cause negative effects in boiler performances and unstable operations. The purpose of this study is to observe slagging and fouling characteristics resulted from burning various ranks of pulverized coals. We have tested 3 different coals: FLAME(bituminous), KCH(sub-bituminous) and MOOLARBEN(bituminous)coals in the pilot system $50kW_{th}$ scale. A stainless steel tube with preheated air inside was installed in the downstream in order to simulate water wall. Collected ash on the probe and the slag inside the furnace near burner were analyzed by SEM (scanning electron microscopy) to verify the formation degree, surface features and color changes of the pasty ash particles. Induced coupled plasma and energy dispersive X-ray spectroscopy were also performed to figure out the chemical characteristics of collected samples. As a result, KCH was observed that more slag was developed inside the walls of the furnace and on the probe than the other two kinds of coals, as shown in the calculate slagging and fouling indices as well.