• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.8
• /
• pp.319-324
• /
• 2003

AIN thin films are deposited on Si (100) and $SiO_2$/Si substrates by using an RF magnetron sputtering method and by changing the conditions of deposition variables, such as RF power, $N_2$/Ar flow ratio, and substrate temperature ($T_sub$). For all the deposited AIN films, XRD Peak patterns are monitored to examine the effect of deposition condition on the crystal orientation. Highly (002)-oriented AIN films are obtained at following nominal deposition conditions; RF Power : 350W, $N_2$/Ar ratio = 10/20, T$_{sub}$ : $250^{\circ}C$, and working pressure = 5mTorr, respectively. AIN-based SAW devices are fabricated using a lift-off method by varying the thickness of AIN layer. Insertion losses and side-lobe rejection levels of fabricated SAW devices are extracted from their frequency response characteristics, which are also compared in terms of AIN thickness and substrate. Relationships between the film properties of AIN films and the frequency responses of SAW devices are discussed. It is concluded from the experimental results that the (002)-preferred orientation as well as the surface roughness of AIN film may play a crucial role of determining the device performances of AIN-SAW devices.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.187-189
• /
• 1995

A Surface Acoustic Wave Gas sensor for NO, CO, H$_2$gas detection was designed fabricated, and tested. A delay line device was designed to composite a single mode SAW oscillator which enables to measure a SAW velocity. To reduce the effect of temperature and humidity, dual delay line oscillator circuit was used. And final output was measured by digital frequency counter. NO, CO, H$_2$gas were detected by WO$_3$thin film deposited on the path of the Delay Line.

• Journal of the Korean Society for Precision Engineering
• /
• v.23 no.4 s.181
• /
• pp.139-145
• /
• 2006

This paper presents the design and manufacturing of a sensor using SAW and delay line in order to measure temperature. SAW sensors having single and double electrodes are manufactured on the $128^{\circ}YX-LiNbO_3$ substrate, and its process is addressed. Before manufacturing, the device is simulated using a commercial finite element program. The frequency responses of the saw sensor on the temperature change is measured. Since the center frequency on the temperature change from $-30^{\circ}C$ to $80^{\circ}C$ is linearly changed, the saw sensor is applicable to measure the temperature change or strain variation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.235-235
• /
• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.43 no.1 s.343
• /
• pp.33-40
• /
• 2006

This paper presents a novel surface acoustic wave (SAW)-based pressure sensor, which is composed of single phase unidirectional transducer (SPUDT), three reflectors, and a deep etched substrate for bonding underneath the diaphragm. Using the coupling of modes (COM) theory, the SAW device was simulated, and the optimized design parameters were extracted. Finite Element Methods (FEM) was utilized to calculate the bending and stress/strain distribution on the diaphragm under a given pressure. Using extracted optimal design parameters, a 440 MHz reflective delay line on 41o YX LiNbO3 was developed. High S/N ratio, shan reflection peaks, and small spurious peaks were observed. The measured S11 results showed a good agreement with simulated results obtained from coupling-of-modes (COM) modeling and Finite Element Method (FEM) analysis.

• Journal of Biosystems Engineering
• /
• v.33 no.4
• /
• pp.282-287
• /
• 2008

Love wave is one of the shear horizontal waves and it can propagate between two layers in liquid without energy loss. The SAW (surface acoustic wave) sensor using Love wave is very useful for real time measurement of the viscosity of liquid with high sensitivity. In this study, the 77 MHz and 155 MHz Love wave SAW sensors were fabricated and use to measure the viscosity of low viscous liquid. To generate the surface acoustic wave, the inter-digital transducers were fabricated on the quartz crystal wafer. In order to obtain the optimal thickness of the coating film (novolac photoresist) generating the Love wave on the surface of SAW device, theoretical calculation was performed. The performances of fabricated Love wave SAW sensors were tested. As test liquid, pure water and glycerol solutions having different concentrations were used. Since the determination coefficients of the regression equations for measuring the viscosity of liquid are greater than 0.98, the developed Love wave SAW sensors in this study will be very useful for precise measurement of viscosity of liquid.

• Journal of Sensor Science and Technology
• /
• v.8 no.2
• /
• pp.108-114
• /
• 1999

Surface acoustic wave (SAW) device is very attractive for gas sensor applications because of their small size, low cost, high sensitivity, and good reliability. A dual delay line surface acoustic wave $NO_2$ gas sensors have been designed and fabricated on the $LiTaO_3$ piezoelectric single crystal substrate. The capacitance of the fabricated IDTs was 326.34pF at the frequency of 79.3MHz. The maximum reflection loss of the impedence-matched IDTs was -16.74dB at the frequency of 79.3MHz. The SAW oscillator was constructed and the stable oscillation was obtained by controlling the gain of rf amplifier properly. The oscillation frequency shift of the SAW oscillator to the $NO_2$ gas was 28Hz/ppm.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.7
• /
• pp.288-292
• /
• 2003

AlM thin film has been deposited on A1$_2$O$_3$ substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films. SAW velocity of IDTs/AlN/Si structure was about 5038［㎧］ at the center frequency of 251.9［MHz］ and insertion loss was measured to be relatively low value of 35.6［dB］. SAW velocity of IDTs/AlN/A1$_2$O$_3$ structure was improved to be about 5960［㎧］ at the center frequency of 296.7［MHz］.

• Proceedings of the Korean Institute of Communication Sciences Conference
• /
• 1983.10a
• /
• pp.35-38
• /
• 1983

It is described a novel SAW oscillator which can be varriable its frequenis by using two output IDT. The results show that frequencies staility is good and variable frequencies range can be broaden by design of IDT.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.29 no.9 s.240
• /
• pp.1276-1281
• /
• 2005

Compound semiconductors are the semiconductors composed of more than two chemical elements. Lithium Tantalate$K_I$ wafer is used for several optical devices, especially surface acoustic wave(SAW) device. Because of the lithography in SAW device process, $LiTaO_3$ polishing is needed. In this paper, the commercial slurries $(NALC02371^{TM},\; ILD1300^{TM},\;ceria slurry)$ used for chemical mechanical polishing(CMP) were tested, and the most suitable slurry was selected by measuring material removal rate and average centerline roughness$(R_a)$. From these result, it was proven that $ILD1300^{TM}$ was the most suitable slurry for $LiTaO_3$ wafer CMP due to the chemical reaction between solution in slurry and material.