• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.387-392
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• 2019

$Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

• 반도체디스플레이기술학회지
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• 제18권1호
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• pp.15-20
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• 2019

Inspection and measurement of surface quality is one of the most critical processes for manufacturing products such as semiconductor wafers, sapphire substrates, and display panels. The vibrations of the inspection and measurement devices are supposed to be the most dominant factors for severe measurement errors and longer measuring time. In this study, dynamic characteristics of an inspection and measurement device are analyzed through frequency response experiment and computer simulation to obtain parameters such as frequencies, magnitudes, mode shapes, and periods of vibrations. And then an active damper which consists of sensor, interface board, and actuator is designed based on the parameters to formulate the most effective reaction signal to suppress the vibrations which is generated by an interface board, and provided by an actuator. If the vibrations are measured by the sensor, the active damper immediately generates and provides the corresponding reaction signal to inspection and measurement device. The result shows that the active damper can suppress structural vibrations effectively and reduce measuring time of the device and enhance the productivity.

• 한국광학회지
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• 제33권6호
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• pp.317-323
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• 2022

본 논문에서는 투명한 물질의 두께를 측정하기 위한 방법으로 기하 위상 렌즈 기반의 색공초점 센서를 개발하고, 성능 개선을 위한 보정 방법을 제시한다. 일반적인 색공초점 센서의 복잡한 설계로 인한 한계를 극복하기 위해, 기하 위상 렌즈를 이용하여 전체 시스템의 크기를 줄이고, 시스템 오차를 보상하기 위한 파장 첨두 위치 추출 방법과 계통 오차 제거 방법을 설명한다. 색공초점 센서를 이용하여 투명한 물질의 두께를 측정하기 위한 이론을 설명하고, 이를 사파이어 및 BK7 물질의 두께를 측정함으로써 실험적으로 검증한다. 색공초점 센서를 이용한 두께 측정 방법은 기존의 간섭계 및 공초점 센서의 방법들에 비해 측정 속도가 빠르고, 분산 등에 의한 두께 측정 영역 제한이 없기 때문에 많은 응용이 가능하다.

• 한국결정성장학회지
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• 제32권3호
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• pp.83-88
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• 2022

이종 기판과 GaN의 물성 차이로 인해 발생하는 결함을 제어하기 위한 다양한 방법 중 동종 물질을 완충층으로 사용하는 LT-GaN 방법을 사용하여 완충층과 성장 온도의 상관성을 자체 제작한 성장 장비를 통해 확인하고자 하였다. 성장 온도에 따라 표면에 형성된 LT-GaN 결정성에 변화가 있었으며, annealing 후 LT-GaN가 나타내는 결정성에 따라 epiGaN의 응력 완화 효과에 차이점이 있었다. 반면 LT-GaN의 높은 결정성은 다결정을 형성하는 원인으로 작용하여 그 위에 성장하는 epi-GaN의 결정질을 저해하는 결과를 유발하였다.

• 센서학회지
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• 제30권6호
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• pp.446-450
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• 2021

Non-dispersive infrared (NDIR) gas sensors typically use an optical filter that transmits a discriminating 4.26 ㎛ wavelength band to measure carbon dioxide (CO2), as CO2 absorbs 4.26 ㎛ infrared. The filter performance depends on the transmittance and full width at half maximum (FWHM). This paper presents the fabrication, sensitivity, and selectivity characteristics of a distributed Bragg reflector (DBR)-based Fabry-Perot filter with a simple structure for CO2 detection. Each Ge and SiO2 films were prepared using the RF magnetron sputtering technique. The transmittance characteristics were measured using Fourier-transform infrared spectroscopy (FT-IR). The fabricated filter had a peak transmittance of 59.1% at 4.26 ㎛ and a FWHM of 158 nm. In addition, sensitivity and selectivity experiments were conducted by mounting the sapphire substrate and the fabricated filter on an NDIR CO2 sensor measurement system. When measuring the sensitivity, the concentration of CO2 was observed in the range of 0-10000 ppm, and the selectivity was measured for environmental gases of 1000 ppm. The fabricated filter showed lower sensitivity to CO2 but showed higher selectivity with other gases.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.57-62
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• 2022

The plasma resistance of multi-component glasses containing La, Gd, Ti, Zn, Y, Zr, Nb, and Ta was analyzed in this study. The plasma etching was performed via inductively coupled plasma-reactive ion etching (ICP-RIE) using CF₄/O₂/Ar mixed gas. After the reaction, the glass with a low fluoride sublimation temperature and high content of P, Si, and Ti elements showed a high etching rate. On the other hand, the glass containing a high fluoride sublimation temperature component such as Ca, La, Gd, Y, and Zr exhibited high plasma resistance because the etch rate was lower than that of sapphire. Glass with low plasma resistance increased surface roughness after etching or nanoholes were formed on the surface, but glass with high plasma resistance showed little change in surface microstructure. Thus, the results of this study demonstrate the potential for the development of plasma-resistant glasses (PRGs) with other compositions besides alumino-silicate glasses, which are conventionally referred to as plasma-resistant glasses.

• Journal of Chest Surgery
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• 제32권6호
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• pp.579-583
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• 1999

배경: 다한증에 대한 교감신경절단술은 안전하며 확실한 치료방법으로 인정받고 있다. 다한증 환자의 교감신경절단술의 객관적 평가와 추적 관찰을 위해 수술 전후 교감신경 피부반응검사(Sympathetic Skin Response, SSR)를 시행하였고 그 임상적 유용성을 검증하고자 하였다. 대상 및 방법: 수장부다한증 환자 15명을 대상으로 교감신경절단술 전후에 Medelec Sapphire Plus 근전도 기기를 이용하여 교감신경 피부반응을 검사하였다. 환자는 앙와위 자세에서 우측 정중신경을 전기자극하여 이를 네 개의 채널로 우측 손바닥, 좌측 손바닥, 우측 발바닥, 좌측 발바닥에서 동시에 기록하였으며 피부 온도도 같이 측정하였다. 모든 환자에서 비디오 흉강경을 이용한 T2,3 교감신경절단술을 시행하였다. 2명의 환자에서는 수술 한달 후에 교감신경피부반응검사를 시행하였다. 결과: 임상적으로 15명 모두에서 만족스러운 증상의 호전을 보였으며, 수술 후 합병증으로 5명의 환자에서 적은양의 잔유 기흉이 있었으나 자연 흡수되었다. 추적 관찰에서 재발은 없었고 10명(66%)의 환자에서 보상성 다한증을 호소하였다. 수술후 모든 환자에서 교감신경 피부반응의 변화를 보였고 15명중 양손에서는 12명(80%), 양발에서는 6명이 교감신경 피부반응의 완전소실을 보였고, 나머지 환자에서도 잠복시간은 양측 손과 발에서 현저히 지연되어 나타났으며 진폭도 현저히 감소하였다. 수술 한달 후 검사 할수 있었던 2명의 환자에서 수술 직후 검사와 비슷한 결과를 얻을 수 있었다. 피부 온도는 수술전 양쪽 손과 발에서 정상보다 낮았으며 수술 후 양측 손과 발에서 모두 상승하였고 통계학적으로 유의하였으며(p<0.05), 발에서 보다 손에서 더 많이 상승하였다. 결론: 수장부 다한증 환자의 교감신경절단술후 모든 환자에서 양쪽 손과 발에서 피부온도의 상승과 교감신경 피부반응의 변화를 보였고, 12명의 환자(80%)에서는 양손에서 교감신경 피부반응이 완전히 소실되었으며, 추적관찰에서도 술후 검사와 비슷한 결과를 보였다. 교감신경 피부반응검사는 다한증 환자의 교감신경절단술후의 평가와 재발 등의 추적관찰에 있어서 객관적인 방법으로 이용될 수 있으리라 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권12호
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• pp.654-664
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• 2000

Thin films of ZnO are deposited by using an RF magnetron sputtering with varying the substrate temperature(RT~39$0^{\circ}C$) and RF power(50~250W). Cu-doped ZnO(denoted by ZnO:Cu) films have also been prepared by co-spputtering of a ZnO target on which some Cu-chips are attached. Different substrate materials, such as Si, $SiO_{2}/Si$, sapphire, DLC/Si, and poly-diamond/Si, are employed to compare the c-axial growth features of deposited ZnO films. Texture coefficient(TC) values for the (002)-preferential growth are estimated from the XRD spectra of deposited films. Optimal ranges of RF powers and substrate temperatures for obtaining high TC values are determined. Effects of Cu-doping conditions, such as relative Cu-chip sputtering areas, $O_{2}/(Ar+O_{2})$ mixing ratios, and reactor pressures, on TC values, electrical resistivities, and relative Cu-compositions of deposited ZnO:Cu films have been systematically investigated. XPS study shows that the relative densities of metallic $Cu(Cu^{0})$ atoms and $CuO(Cu^{2+})$-phases within deposited films may play an important role of determining their electrical resistivities. It should be noted from the experimental results that highly resistive(> $10^{10}{\Omega}cm$ ZnO films with high TC values(> 80%) can be achieved by Cu-doping. SAW devices with ZnO(or Zn):Cu)/IDT/$SiO_{2}$/Si configuration are also fabricated to estimate the effective electric-mechanical coupling coefficient($k_{eff}^{2}$) and the insertion loss. It is observed that the devices using the Cu-doped ZnO films have a higher $k_{eff}^{2}$ and a lower insertion loss, compared with those using the undoped films.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.