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http://dx.doi.org/10.6111/JKCGCT.2022.32.3.083

Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN  

Lee, Seung Hoon (Ceramic Research Institute, Hanyang University)
Lee, Joo Hyung (Division of Materials Science and Engineering, Hanyang University)
Oh, Nuri (Division of Materials Science and Engineering, Hanyang University)
Yi, Sung Chul (Ceramic Research Institute, Hanyang University)
Park, Hyung Bin (AMES Micron Co. Ltd.)
Shin, Ran Hee (AMES Micron Co. Ltd.)
Park, Jae Hwa (AMES Micron Co. Ltd.)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.32, no.3, 2022 , pp. 83-88 More about this Journal
Abstract
To improve the crystallinity of GaN, there are researches on surface treatment to control the difference in physical properties between GaN and heterogeneous substrate. 'Low-temperature GaN (LT-GaN)' is one of the ways to solve the problem and we investigated the relationship between growth temperature and properties of LT-GaN in our homemade vertical type HVPE. The LT-GaN nuclei were formed on the sapphire surface at low growth temperatures and they presented differences in the density and crystallinity depending on the growth temperature. Significantly, the stress relaxation effect on the epitaxial GaN (epi-GaN) was affected by the crystallinity of LT-GaN. However, the high crystallinity of LT-GaN exacerbated the crystal quality of epi-GaN because they worked as a catalyst and seed of polycrystalline.
Keywords
Low temperature GaN; Residual stress; Nuclei density; HVPE;
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