Effect of low-temperature GaN grown at different temperature on residual stress of epitaxial GaN
![]() |
Lee, Seung Hoon
(Ceramic Research Institute, Hanyang University)
Lee, Joo Hyung (Division of Materials Science and Engineering, Hanyang University) Oh, Nuri (Division of Materials Science and Engineering, Hanyang University) Yi, Sung Chul (Ceramic Research Institute, Hanyang University) Park, Hyung Bin (AMES Micron Co. Ltd.) Shin, Ran Hee (AMES Micron Co. Ltd.) Park, Jae Hwa (AMES Micron Co. Ltd.) |
1 | F.-W. Yang, Y.-Y. Chen, S.-W. Feng, Q. Sun and J. Han, "Effects of thickness of a low-temperature buffer and impurity incorporation on the characteristics of nitrogen-polar GaN", Nanoscale Res. Lett. 11 (2016) 509. DOI |
2 | E. Richter, Ch. Hennig, M. Weyers, F. Habel, J.-D. Tsay, W.-Y. Liu, P. Bruckner, F. Scholz, Yu. Makarov, A. Segal and J. Kaeppeler, ""Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE", J. Cryst. Growth 277 (2005) 6. DOI |
3 | C.E.C. Dam, P.R. Hageman and P.K. Larsen, "Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study", J. Cryst. Growth 285 (2005) 31. DOI |
4 | J. Meng and Y. Jaluria, "Numerical simulation of GaN growth in a metalorganic chemical vapor deposition process", J. Manuf. Sci. Eng. 135 (2013) 061013. DOI |
5 | P. Kempisty and S. Krukowski, "Crystal growth of GaN on (0001) face by HVPE-atomistic scale simulation", J. Cryst. Growth 303 (2007) 37. DOI |
6 | Z. Dong, Y. Andre, V.G. Dubrovskii, C. Bougerol, C. Leroux, M.R. Ramdani, G. Monier, A. Trassoudaine, D. Castelluci and E. Gil, "Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy", Nanotechnol. 28 (2017) 125602. DOI |
7 | E. Ruiz, S. Alvarez and P. Alemany, "Electronic structure and properties of AlN", Phys. Review B 49 (1994) 7115. DOI |
8 | R. Ramesh, R. Loganathan, S.S. Menon, K. Baskar and S. Singh, "Controlled nucleation and growth of nanostructures by employing surface modified GaN based layers/heterostructures as bottom layer", RSC Adv. 4 (2014) 7112. DOI |
9 | S. Nakamura, "GaN growth using GaN buffer layer", Jpn. J. Appl. Phys. 30 (1991) L1705. DOI |
10 | T. Zywietz, J. Neugebauer and M. Scheffler, "Adatom diffusion at GaN (0001) and (0001) surfaces", Appl. Phys. Lett. 73 (1998) 487. DOI |
11 | Y. Tian, Y. Shao, X. Hao, Y. Wu, L. Zhang, Y. Dai, Q. Juo, B. Zhang and H. Hu, "Preparation and optimization of freestanding GaN using low-temperature GaN layer", Front. Mater. Sci. 13 (2019) 314. DOI |
12 | H. Fujikura, K. Iizuka and S. Tanaka, :Realization of low dislocation GaN/sapphire wafers by 3-step metalorganic vapor phase epitaxial growth with island induced dislocation control", Jpn. J. Appl. Phys. 42 (2003) 2767. DOI |
13 | S. Strite, M.E. Lin and H. Morkoc, "Progress and prospects for GaN and the III-V nitride semiconductors", Thin Solid Films 231 (1993) 197. DOI |
14 | L. Zhen-Kun, K. Yi-Lan, H. Ming, Q. Yu, X. Han and N. Hong-Pan, "An experimental analysis of residual stress measurements in porous silicon using microraman spectroscopy", Chin. Phys. Lett. 21 (2004) 403. DOI |
15 | D.S. Wuu, W.K. Wang, K.S. Wen, S.C. Huang, S.H. Lin, S.Y. Huang and C.F. Lin, "Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template", Appl. Phys. Lett. 89 (2006) 161105. DOI |
16 | J.H. Edgar, "Properties of group III nitrides" (Institution of Electrical Engineers, London, 1994). |
17 | I.M. Watson, "Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications", Coord. Chem. Rev. 257 (2013) 2120. DOI |
18 | T.J. Flack, B.N. Pushpakaran and S.B. Bayne, "GaN technology for power electronic applications: a review", J. Electron. Mater. 45 (2016) 2673. DOI |
19 | J. Hu, H. Wei, S. Yang, C. Li, H. Li, X. Liu, L. Wang and Z. Wang, "Hydride vapor phase epitaxy for gallium nitride substrate", J. Semicond. 40 (2019) 101801. DOI |
20 | Q. Huo, Y. Shao, Y. Wu, B. Zhang, H. Hu and X. Hao, "High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE", Sci. Rep. 8 (2018) 3166. DOI |
21 | K.S.H. Kawakami, K. Tsubouchi and N. Mikoshiba, "Epitaxial growth of AlN film with an initial-nitriding layer on a-Al2O3 substrate", Jpn. J. Appl. Phys. 27 (1988) L161. DOI |
22 | S. Alexandrov, A. Kovalgin and D. Krasovitskiy, "A study of CVD of gallium nitride films by in situ gas-phase UV spectroscopy', J. Phys. IV 05 (1995) 183. |
23 | J. Prazmowska, R. Korbutowicz, R. Paszkiewicz, A. Szyszka, J. Serafinczuk, A. Podhorodecki, J. Misiewicz and M. Tlaczala, "Optimization of GaN nucleation layer deposition conditions on sapphire substrates in HVPE system", Vacuum 82 (2008) 988. DOI |
24 | A.H. White and W. Melville, "The decomposition of ammonia at high temperatures", J. Am. Chem. Soc. 27 (1905) 373. DOI |
25 | S.A. Kukushkin, V.N. Bessolov, A.V. Osipov and A.V. Luk'yanov, "Mechanism and kinetics of early growth stages of a GaN film", Phys. Solid State 44 (2002) 1399. DOI |
26 | T. Onozu, R. Miura, S. Takami, M. Kubo, A. Miyamoto, Y. Iyechika and T. Maeda, "Investigation of thermal annealing process of GaN layer on sapphire by molecular dynamics", Jpn. J. Appl. Phys. 39 (2000) 4400. DOI |
27 | J.C. Zolper, M.H. Crawford, A.J. Howard, J. Ramer and S.D. Hersee, "Morphology and photoluminescence improvements from high-temperature rapid thermal annealing of GaN", Appl. Phys. Lett. 68 (1996) 200. DOI |
![]() |