• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.108-108
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• 2002

• Research in Community and Public Health Nursing
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• v.28 no.4
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• pp.431-439
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• 2017

Purpose: This study aims to examine the factors influencing sexually transmitted infection (STI) in Korean adolescents 12 to 18 years. Methods: Using statistics from 10-11th Korea Youth Risk Behavior Web-based Survey, secondary analysis was conducted. The study sample consisted of 4,886 boys and 1,998 girls who had reported initiating sexual intercourse. Results: The proportion of adolescents who had a sexually transmitted infection was 8.8% of boys and 11.0% of girls. In multiple regression analysis, grade, smoking, first intercourse before middle school, intercourse after drinking alcohol, living without family, large amounts of pocket money were factors associated with sexually transmitted infection for both boys and girls. Use of condom is related to STI contraction of boys only. Formal sex education was not associated with reducing risk of STI. Conclusion: The results of this study show the factors associated with STI among Korean adolescents. Gender-related effective interventions should be taken into consideration in school-based sex education programs.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.4
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• pp.833-837
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• 2012

This paper proposes a DRAM data retention time enhancement method that minimizes silicon loss and undercut at STI sidewall by reducing the SC1 (Standard Cleaning) time. SC1 time optimization debilitates the parasitic electric field in STI's top corner, which reduces an inverse narrow width effect to result in reduction of channel doping density without increasing the subthreshold leakage of cell Tr. Moreover, it minimizes the electric field in depletion area from cell junction to P-well, increasing yield or data retention time.

• STI Policy Review
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• v.1 no.3
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• pp.17-24
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• 2010

Energy consumption is the largest contributing factor for the increase of $CO_2$ emissions and amounts for almost 85% of all emissions. The future energy consumption of Korea is projected to grow exponentially despite its heavy dependence on imported energy that represents 97% of its total energy supply. According to a recent OECD report the carbon emission level of Korea is currently ranked 9th in $CO_2$ emissions, and is growing by almost 3% every year. Against this background, the Korean government introduced the "low carbon green growth" policy in 2008. As the global challenges intensified in the wake of the world economic crisis, Korea has been working hard in raising the visibility of its efforts at the club governance meetings, in particular the G-20 summit. Because of cooperative efforts with major member countries, the G-20 summit agenda has been significantly diversified to include long-term issues such as climate change, development issues, and global health. To achieve an effective green recovery for a new green world economic order, the G-20 summit leaders should concentrate on a strategy of establishing green governance for a global STI cooperation. Korea as the host country is poised to leverage the Seoul G-20 summit to catalyze global efforts toward a new green economic order.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.203-207
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• 2008

Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials. There are many elements such as slurry, polishing pad, process parameters and conditioning in CMP process. Especially, polishing pad is considered as one of the most important consumables because this affects its performances such as WIWNU(within wafer non-uniformity) and MRR(material removal rate). In polishing pad, grooves and pores on its surface affect distribution of slurry, flow and profile of MRR on wafer. A subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure(MS) pad. MS pad is designed to have uniform structure on its surface and manufactured by micro-molding technology. And then STI CMP performances such as pattern selectivity, erosion and comer rounding are evaluated.

• Journal of Mechanical Science and Technology
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• v.14 no.7
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• pp.730-736
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• 2000

In this paper, several tire models (Magic formula, Carpet plot, VA tire, DADS tire and STI tire) are implemented and compared. Since the STI (System Technology Inc.) tire model in the AutoDyn7 program is in a good agreement to NADSdyna STI tire model and experiment, it is selected as a reference tire model for the comparison. To compare tire models, input parameters of each tire model are extracted from the STI tire model to preserve the same tire properties. Several simulations are carried out to compare performances of tire models, i. e., bump simulation, lane change simulation, and pulse steering simulation. The performances in vehicle maneuverability are also compared with the four parameter evaluation method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.356-357
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• 2005

Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials at their surfaces. Especially, polishing pad is considered as one of the most important consumables because of its properties. Subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure pad. Microstructure pad is designed to have uniform structure on its surface and fabricated by micro-molding technology. And then STI CMP performances such as oxide dishing and nitride corner rounding are evaluated.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.24-27
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• 2001

The end point of oxide chemical mechanical polishing (CMP) have determined by polishing time calculated from removal rate and target thickness of oxide. This study is about control of oxide removal amounts on the shallow trench isolation (STI) patterned wafers using removal rate and thickness of blanket (non-patterned) wafers. At first, it was investigated the removal properties of PETEOS blanket wafers, and then it was compared with the removal properties and the planarization (step height) as a function of polishing time of the specific STI patterned wafers. We found that there is a relationship between the oxide removal amounts of blanket and patterned wafers. We analyzed this relationship, and the post CMP thickness of patterned wafers could be controlled by removal rate and removal target thickness of blanket wafers. As the result of correlation analysis, we confirmed that there was the strong correlation between patterned and blanket wafer (correlation factor: 0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formula. As the result of repeatability test, the differences of calculated polishing time and actual polishing time was about 3.48 seconds. If this time is converted into the thickness, then it is from 104 $\AA$ to 167 $\AA$. It is possible to be ignored because process margin is about 1800 $\AA$.

• The Journal of the Acoustical Society of Korea
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• v.26 no.1
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• pp.8-15
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• 2007

Speech intelligibility of the eavesdropping sound is investigated on a acoustic cavity - glass window coupled system. Using MLS (Maximum Length Sequency) signal as a sound source, acceleration and velocity responses of the glass window are measured by accelerometer and laser doppler vibrometer. MTF (Modulation Transfer Function) is used to identify tile speech transmission characteristics of the cavity and window system. STI (Speech Transmission Index) based upon MTF is calculated and speech intelligibility of the vibration sound of the glass window is estimated. Speech intelligibilities by the acceleration signal and the velocity signal are compared. Finally, intelligibility of the conversation sound is confirmed by the subjective test.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.12
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• pp.2258-2263
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• 2006

In this parer, hump characteristics of short-channel nMOSFETs induced by moistures of the ILD(inter-layer dielectric) layer in the shallow trench isolation (STI) process are investigated and the method for hump suppression is proposed Using nMOSFETs with various types of the gate and a measurement of TDS-APIMS (Thermal Desorption System-Atmospheric Pressure ionization Mass Spectrometry), hump characteristics were systematically analyzed and the systemic analysis based hump model was presented; the ILD layer over poly-Si gate of nMOSFET generates moistures, but they can't diffuse out of the SiN layer due to the upper SiN layer. Consequently, they diffuses into the edge between the gate and STI and induces short-channel hump. In order to eliminate moisture in the ILD layer by out-gassing method, the annealing process prior to the deposition of the SiN layer was carried out. As the result, short-channel humps of the nMOSFETs were successfully suppressed.