• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.54-57
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• 2001

We studied the characteristics of polishing pad, which can apply STI-CMP process for global planarization of multilevel interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was defected less than 2 on JRlll pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and devise yield.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.25-28
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• 2001

Recently, STI(Shallow Trench Isolation) process has attracted attention for high density of semiconductor device as a essential isolation technology. Without applying the conventional complex reverse moat process, CMP(Chemical Mechanical Polishing) has established the Process simplification. However, STI-CMP process have various defects such as nitride residue, torn oxide defect, damage of silicon active region, etc. To solve this problem, in this paper, we discussed to determine the control limit of process, which can entirely remove oxide on nitride from the moat area of high density as reducing the damage of moat area and minimizing dishing effect in the large field area. We, also, evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.911-913
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• 1999

Shallow Trench Isolation (STI) has become the most promising isolation scheme for ULSI applications. The stress of STI structure is one of several factors to degrade characteristics of a device. The stress contours or STI structure vary with the trench depth. Isolation characteristics of STI was analyzed as the depth of trench varied. And transistor characteristics was compared. Isolation punch-through voltage for n$^{＋}$ to pwell and p$^{＋}$ to nwell increased as trench depth increased. n$^{＋}$ to pwell leakage current had nothing to do with trench depth but n$^{＋}$ to pwell leakage current decreased as trench depth increased. In the case of transistor characteristics, short channel effect was independent on trench depth and inverse narrow width effect was greater for deeper trenches. Therefore in order to achieve stable device, it is important to minimize stress by optimizing trench depth.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.311-315
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• 2002

Chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD), inter-level dielectric (ILD) layers of multi-layer interconnections. In this paper, we studied the characteristics of polishing pad, which can apply shallow trench isolation (STI)-CMP process for global planarization of multi-level interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was detected less than 2 on JR111 pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and device yield.

• Journal of the Semiconductor & Display Technology
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• v.3 no.1
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• pp.15-20
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• 2004

Through shallow trench isolation (STI) chemical mechanical polishing (CMP) tests, we investigated the dependence of pad surface temperature on the abrasive and additive concentrations in ceria slurry under varying pressure using blanket film wafers. The pad surface temperature after CMP increased with the abrasive concentration and decreased with the additive concentration in slurries for the constant down pressure. A possible mechanism is that the additive adsorbed on the film surfaces during polishing decreases the friction coefficient, hence the pad surface temperature gets lower with increasing the additive concentration. This difference in temperature was more remarkable for the higher concentration of abrasives. In addition, in-situ measurement of spindle motor was carried out during oxide and nitride polishing. The averaged motor current for oxide film was higher than that for nitride film, meaning the higher friction coefficient.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.211-213
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• 1999

In this paper, we documented the controlling oxide removal amount on the pattern wafer using removal rate and removal thickness of blanket wafer. There was the strong correlation relationship for both(correlation factor:0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formular. As the result of repeatability test, the difference of calculated polishing time and actual polishing time was 3.48 seconds based on total 50 lots. If this time is converted into the thickness, it is from 104$\AA$ to 167$\AA$. It is possible to be ignored because it is under the process margin.

• Proceedings of the KSPS conference
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• 2005.11a
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• pp.5-11
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• 2005

This paper gives a brief outline of STiLL related research and its practical applications in Europe, U.S.A, and Japan with a view to encouraging Korean speech scientists and developers as well as linguists and pedagogues to cooperate further for more active participation in this field. The state-of-the-art technologies, academic groups, conferences as well as major STiLL softwares are introduced followed by considerations on the current states, problems of STiLL in Korea, and some suggestions for future development.?⨀

• Journal of Korean Foot and Ankle Society
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• v.25 no.1
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• pp.38-45
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• 2021

Subtalar joint instability (STI) is one of the causes of persistent hindfoot pain even after treatment for ankle instability. Diagnosis of STI is often neglected because it is a poorly understood concept. However, understanding of the anatomy and injury mechanism of the subtalar joint is a prerequisite of appropriate treatment. Patients with STI usually complain of several symptoms, such as recurrent sprains or a giving way sensation and rolling over. Recently, various diagnostic tools and treatment methods have been investigated. This study was undertaken with the aim of helping clinicians by providing a comprehensive understanding of STI.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.156.2-156
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• 2003