• Korean Journal of Materials Research
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• v.16 no.5
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• pp.308-311
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• 2006

The purpose of this study is to investigate the difference of the wafer nanotopography impact on the oxide-film thickness variation between the STI CMP using ceria slurry and STI CMP using fumed silica slurry. The nanotopography impact on the oxide-film thickness variation after STI CMP using ceria slurry is 2.8 times higher than that after STI CMP using fumed silica slurry. It is attributed that the STI CMP using ceria slurry follows non-Prestonian polishing behavior while that using fumed silica slurry follows Prestonian polishing behavior.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.5-9
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• 2002

Chemical mechanical polishing (CMP) has become the preferred planarization method for multilevel interconnect technology due to its ability to achieve a high degree of feature level planarity. Especially, to achieve the higher density and greater performance, shallow trench isolation (STI)-CMP process has been attracted attention for multilevel interconnection as an essential isolation technology. Also, it was possible to apply the direct STI-CMP process without reverse moat etch step using high selectivity slurry (HSS). In this work, we determined the process margin with optimized process conditions to apply HSS STI-CMP process. Then, we evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions. The wafer-to-wafer thickness variation and day-by-day reproducibility of STI-CMP process after repeatable tests were investigated. Our experimental results show, quite acceptable and reproducible CMP results with a wafer-to-wafer thickness variation within 400$\AA$.

• Journal of the Korea Society for Simulation
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• v.11 no.1
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• pp.23-30
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• 2002

An STI(Shallow Trench Isolation) by using a CMP(Chemical Mechanical Polishing) process has been one of the key issues in the device isolation[1] In this paper we fabricated N, P-MOSFEET tall analyse hump characteristics in various rounding oxdation thickness(ex : Skip, 500, 800, 1000$\AA$). As a result we found that hump occurred at STI channel edge region by field oxide recess. and boron segregation(early turn on due to boron segregatiorn at channel edge). Therefore we improved that hump occurrence by increased oxidation thickness, and control field oxide recess( 20nm), wet oxidation etch time(19HF,30sec), STI nitride wet cleaning time(99HF, 60sec+P 90min) and fate pre-oxidation cleaning time (U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.169-172
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• 2004

Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ～ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

• Journal of the Korean Society of School Health
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• v.31 no.2
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• pp.70-78
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• 2018

Purpose: This study investigated the predictors of Sexually Transmitted Infections (STI) among female teenagers in Korea who have had intercourse at least once. Methods: This study is based on the 12th Korea Youth Behavior Web-based Survey conducted in April 2016. Data were collected from 798 middle schools and high schools nationwide in Korea and 65,528 students participated. Among the participants, the subjects of this study were 537 female high school students (Grade 10~12). The data were analyzed through complex samples multiple logistic regression using SPSS statistics 22. Results: Among the 537 female adolescents, 11.9% replied they had experienced STI. The predictors of STI among the subjects were 'age at first intercourse' and 'sexual intercourse after drinking'. The risk of STI was lower in the middle (OR=0.26, 95% CI=0.10~0.64) and high school (OR=0.11, 95% CI=0.04~0.27) age groups than those who had their first sexual intercourse at an elementary school age. The sexual intercourse after drinking group had a higher risk of STI, compared to the no sexual relation after drinking group (OR=2.54, 95% CI=1.28~5.07). Conclusion: Practical sex education programs should begin from the elementary stage in order to protect more female adolescents from STI. In addition, sex education including an alcohol prevention program should be considered to lower STI among female adolescents.

• The Journal of Korean Physical Therapy
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• v.20 no.4
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• pp.1-6
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• 2008

Purpose: We studied the correlation between BBS (Berg Balance Scale), Functional Reach Test (FRT), Timed-Up & Go test (TUG), Stability Index (STI), MBI (Modified Barthel Index), and Fall History. Methods: We recruited 20 stroke patients from the Gang Dong Gu Health Care Center in Seoul, Korea. All subjects could walk with or without an assisting device. Subjects first completed a questionnaire pertaining to their fall history and Activity of Daily Living (MBI), and then were evaluated with BBS, TUG, FRT, and STI. We used the Tetrax posturography system that calculates a STI based on fluctuations in vertical ground reaction forces. The data were analyzed using a Pearson Correlation Coefficient. Results: The BBS and FRT (p<0.05) and MBI (p<0.01) showed a significant positive correlation. BBS negatively correlated with STI and TUG (p<0.01). Fall history and BBS, TUG, MBI, FR, STI did not correlate. Conclusion: The BBS helps predict weight shifting, walking, and ADL, but is not good for predicting fall risk. So, we need to study about factors that affect falling.

• Journal of the Korean Society for Library and Information Science
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• v.27
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• pp.229-263
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• 1994

The main objective of this article lies in discussing dependecy issues as related to information development in NICs. The theoretical foundation was drawn from theories of 'dependency' and of 'information societies,' The main assertion of the dependency school (the more dependency, the less development) was applied for a test of the relationship between dependency on foreign scientific and technical information (STI) resources and indigenous STI development in NICs. Utilizing a case study method, this study explored the causes and results of dependency on foreign STI in a leading NIC­the Republic of Korea (ROK). First identified were the economic factors that might have influenced the ROK's dependency on foreign STI. Also investigated were the social factors that might have had associations with the R&D personnel's dependency on foreign STI. Regarding the development of information area, this study discussed general features in the process of producing, organizng, and gatekeeping indigenous STIIdentified regarding the ROK's information dependency was the R&D personnel's pattern of using foreign STI resources as well as the country's dependency on foreign STI resources. This study also discussed the socio-economic progress toward an information society in ROK for the past decades. Finally, specific linkages between the selected five variables were examined on the basis of the proposed four hypotheses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.175-184
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• 2001

In this study, the improved throughput and stability in device fabrication could be obtained by applying CMP process to STi structue in 0.18 um semiconductor device. To employ the CMP process in STI structure, the Reverse Moat Process used to be added after STI Fill, as a result, the process became more complex and the defect were seriously increased than they had been,. Removal rate of each thin film in STI CMP was not uniform, so, the device must have been affected. That is, in case of excessive CMP, the damage on the active area was occurred, and in the case of insufficient CMP nitride remaining was happened on that area. Both of them deteriorated device characteristics. As a solution to these problems, the development of slurry having high removal rate and high oxide to nitride selectivity has been studied. The process using this slurry afford low defect levels, improved yield, and a simplified process flow. In this study, we evaluated the 'High Selectivity Slurry' to do a global planarization without reverse moat step, and also we evaluated EPD(Eend Point Detection) system with which 'in-situ end point detection' is possible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.149-153
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• 2003

Chemical mechanical polishing (CMP) technology for global planarization of multi-level inter-connection structure has been widely studied for the next generation devices. CMP process has been paid attention to planarized pre-metal dielectric (PMD), inter-layer dielectric (ILD) interconnections. Expecially, shallow trench isolation (STI) used to CMP process on essential. Recently, the direct STI-CMP process without the conventional complex reverse moat etch process has established by using slurry additive with the high selectivity between $SiO_2$ and $Si_3N_4$ films for the purpose of process simplification and n-situ end point detection(EPD). However, STI-CMP process has various defects such as nitride residue, tom oxide and damage of silicon active region. To solve these problems, in this paper, we studied the planarization characteristics using a high selectivity slurry(HSS). As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of HSS STI-CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.90-93
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STI CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. To resolve these problems, the development of slurry for CMP with high removal rate and high selectivity between each thin films was studied then it can be prevent the reasons of many defects by reasons of many defects by simplification of process that directly apply CMP process to STI structure without the reverse moat pattern process.