• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.341-347
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• 2013

The n-type and p-type silicon samples were exposed by 40.0, 3.98 MeV proton beams ranging between 0 to $20.0{\times}10^{13}protons/cm^2$. Coincidence Doppler Broadening Positron Annihilation Spectroscopy (CDBPAS) were applied to study of defect characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the gamma spectrum and the total counts of whole gamma spectrum. The S-parameter values strongly depend on the irradiated proton beam that indicated the defects generate more, rather than the energy intensity. 40 MeV irradiated proton beam in the n-type silicon at $20.0{\times}10^{13}protons/cm^2$ was larger defects than 3.98 MeV irradiated proton beam. It was analysis between the proton irradiation beams and the proton intensities of the irradiation. Because of the Bragg peak, SRIM results shows mainly in a certain depth of the sample to form the defect by the proton irradiation, rather than the defects to appear for the entire sample.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.1061-1070
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• 2023

Over the last few years, lead-free inorganic metal perovskites have gained impressive ground in empowering satellites in space exploration owing to their material stability and performance evolution under extreme space environments. The present work has examined the versatility of eight such perovskites as space radiation shielding materials by computing their photon, charged particles and neutron interaction parameters. Photon interaction parameters were calculated for a wide energy range using PAGEX software. The ranges of heavy charged particles (H, He, C, N, O, Ne, Mg, Si and Fe ions) in these perovskites were estimated using SRIM software in the energy range 1 keV-10 GeV, and that of electrons was computed using ESTAR NIST software in the energy range 0.01 MeV-1 GeV. Further, the macroscopic fast neutron removal cross-sections were also calculated to estimate the neutron shielding efficiencies. The examined shielding parameters of the perovskites varied depending on the radiation type and energy. Among the selected perovskites, Cs₂TiI₆ and Ba₂AgIO₆ displayed superior photon attenuation properties. A 3.5 cm thick Ba₂AgIO₆-based shield could reduce the incident radiation intensity to half its initial value, a thickness even lesser than that of Pb-glass. Besides, CsSnBr₃ and La_0.8Ca_0.2Ni_0.5Ti_0.5O₃ displayed the highest and lowest range values, respectively, for all heavy charged particles. Ba₂AgIO₆ showed electron stopping power (on par with Kovar) better than that of other examined materials. Interestingly, La_0.8Ca_0.2Ni_0.5Ti_0.5O₃ demonstrated neutron removal cross-section values greater than that of standard neutron shielding materials - aluminium and polyethylene. On the whole, the present study not only demonstrates the employment prospects of eco-friendly perovskites for shielding space radiations but also suggests future prospects for research in this direction.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.336-336
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• 2012

수명 측정법과 동시 계수 도플러 넓어짐 양전자 소멸 분광법으로 p형과 n형 실리콘 시료에 0, 3.98 MeV 에너지를 가진 $0.0{\sim}20.0{\times}10^{13}$ protons/$cm^2$ 양성자 빔 조사에 의한 결함을 측정하여 실리콘 결함 특성에 대하여 조사하였다. 양전자와 전자의 쌍소멸로 발생하는 감마선 스펙트럼의 전자 밀도 에너지를 수리적 해석 방법인 S-변수와 열린 부피 결함에 대한 측정법으로서 양전자 수명 ${\tau}1$과 ${\tau}2$, 이에 따른 밀도 I1과 I2를 사용하여, 시료의 구조 변화를 측정하였다. 본 연구에서 측정된 S-변수와 양전자 수명은 시료에 조사된 양성자의 빔 에너지에 따라 변화하기보다 양성자 조사량의 변화에 따라 결함이 증가하였으며, 양전자 수명 측정과 같은 경향을 보여준다. SRIM의 결과로써, 양성자 조사 에너지에 따른 Bragg 피크 때문에 양성자는 시료의 특정 깊이에 주로 결함을 형성하여 시료 전체에는 결함으로 잘 나타나지 않기 때문이다. 빔의 조사량에 따른 결함의 영향이 더 큰 것으로 나타났다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.679-685
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• 2014

For the measurements of surface shape milled using FIB (focused ion beam), the silicon bulk, $Si_3N_4/Si$, and Al/Si samples are used and observed the shapes milled from different sputtering rates, incident angles of $Ga^+$ ions bombardment, beam current, and target material. These conditions also can be influenced the sputtering rate, raster image, and milled shape. The fundamental ion-solid interactions of FIB milling are discussed and explained using TRIM programs (SRIM, TC, and T-dyn). The damaged layers caused by bombarding of $Ga^+$ ions were observed on the surface of target materials. The simulated results were shown a little bit deviation with the experimental data due to relatively small sputtering rate on the sample surface. The simulation results showed about 10.6% tolerance from the measured data at 200 pA. On the other hand, the improved analytical model of damaged layer was matched well with experimental XTEM (cross-sectional transmission electron microscopy) data.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.526-526
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• 2012

DC magnetron discharges were studied using three-dimensional self-consistent particle-in-cell and Monte Carlo collisional (PIC-MCC) simulation codes. Two rectangular sputter sources (120 mm * 250 mm and 380 mm * 200 mm target sizes) were used in the simulation modeling. The number of incident ions to the Cu target as a function of position and simulation time was obtained. The target erosion profile was calculated by using the incident ions and the sputtering yields of the Cu target calculated with SRIM codes. The maximum ion density of the ion density distribution in the discharge was about $10^{10}cm^{-3}$ due to the calculation speed limit. The result may be less than one or two order of magnitude smaller than the real maximum ion density. However, the target erosion profiles of the two sputter sources were in good agreement with the measured target erosion profiles except for the erosion profile near the target surface, in which which the measured erosion width was broader than the simulation erosion width.

• Nuclear Engineering and Technology
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• v.42 no.5
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• pp.600-607
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• 2010

Rhenium-186, having a half-life of 90.64 h, is an important radionuclide, used in metabolic radiotherapy and radio immunotherapy. $^{186}Re$ hydroxyethylidene diphosphonate (HEDP) is a new compound used for the palliation of painful skeletal metastases. Its production is achieved via charged-particle-induced reactions; the data are available in EXFOR library. For the work discussed in this paper, production of $^{186}Re$ was done via $^{nat}W(p,n)^{186}Re$ nuclear reaction. Pellets of $^{nat}W$ were used as targets and were irradiated with 15, 17.5, 20, 22.5, 25 MeV proton beams at 5 ${\mu}A$ current. The radiochemical separation was performed by the ion exchange chromatography method. The production yield achieved at 25 MeV was 1.91 $MBq{\cdot}{\mu}A^{-1}{\cdot}h^{-1}$. Excitation functions for the $^{186}Re$ radionuclide, via $^{186}W(p,n)^{186}Re$ and $^{186}W(d,2n)^{186}Re$ reactions were calculated by ALICE-ASH and TALYS-1.0 codes to validate and fit the experimental data and to obtain a recommended set of data for $^{186}W(p,n)^{186}Re$ reaction. Required thickness of the targets was obtained by SRIM code for each reaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.609-615
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• 2011

This paper is studied for the improvement of the characteristics of gate oxide with 3-nm-thick gate oxide by deuterium ion implantation methode. Deuterium ions were implanted to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas to nitrogen was performed to remove the damage of D-implantation. We simulated the deuterium ion implantation to find the optimum condition by SRIM (stopping and range of ions in matter) tool. We got the optimum condition by the results of simulation. We compare the electrical characteristics of the optimum condition with others terms. We also analyzed the electrical characteristics to change the annealing conditions after deuterium ion implantation. The results of the analysis, the breakdown time of the gate oxide was prolonged in the optimum condition. And a variety of annealing, we realized the dielectric property that annealing is good at longer time. However, the high temperature is bad because of thermal stress.

• Nuclear Engineering and Technology
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• v.55 no.8
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• pp.2984-2996
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• 2023

A 100 kW thermal power pool-type light water reactor and Pu(Be) as a fast neutron source were used to determine the appropriate carrier for irradiating boron-containing samples with neutron beams. The tested materials (carriers) were subjected to neutron beams in the reactor's tangential channel. The geometrical arrangement of experimental facilities relative to the neutron beam trajectory, as well as the effect of sample thickness on the count rate, were investigated. The majority of the detectable charged particles emitted by the neutron beam's interaction with tested materials and the detector's detecting layer are protons (recoiled hydrogen) and particles generated in nuclear reactions (protons and alpha particles), respectively. Stopping and Range of Ions in Matter (SRIM) software was used to do theoretical calculations for the range of expected released particles in various materials, including human tissue. The results of measurement and calculation are in good agreement. According to experiments and theoretical calculations, the number of protons emitted by tissue-like materials may commit a dose comparable to that of boron capture reactions. Furthermore, the range of protons is significantly larger than that of alpha particles, which most probably changes dose distribution in healthy cells surrounding the tumor, which is undesirable in the BNCT approach.

• Nuclear Engineering and Technology
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• v.55 no.4
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• pp.1287-1299
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• 2023

A new Monte-Carlo-based computer program (RDS-BASIC) is developed to simulate the transport of energetic ions in pure matter. This computer program is utilizing an algorithm that uses detailed numerical solutions for the classical scattering integral for evaluating the outcomes of the binary collision processes. This approach is adopted by several prominent similar simulation programs and is known to provide results with higher accuracy compared to other approaches that use approximations to shorten the simulation time. Furthermore, RDS-BASIC simulation program contains special methods to reduce the displacement energy threshold of surface atoms. This implementation is found essential for accurate simulation results for sputtering yield in the case of very low energy ions irradiation (near sputtering energy threshold) and also successfully solve the problem of simultaneously obtaining an acceptable number of atomic displacements per incident ions. Results of our simulation for several irradiation systems are presented and compared with their respective TRIM (SRIM-2013) and the state-of-the-art SDTrimSP simulation results. Our sputtering simulation results were also compared with available experimental data. The simulation execution time for these different simulation programs has also been compared.

• Progress in Superconductivity and Cryogenics
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• v.26 no.1
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• pp.5-9
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• 2024

This study investigated the effect of Kr ion beam irradiation on the superconducting properties of Nb thin films, which are known for their high superconducting transition temperature (T_c) at ambient pressure among single elements. Using the Stopping and Range of Ions in Matter (SRIM) program, we analyzed the distribution of Kr ions and displacement per atom (DPA) after irradiation, finding a direct correlation between irradiation amount and DPA. In samples with stronger beam energy, deeper ion penetration, fewer ions remained, and higher DPA values were observed. X-ray diffraction (XRD) revealed that the Nb (110) peak at 38.5° weakened and shifted with increasing irradiation. T_c decreased in all samples after irradiation, more significantly in those with higher beam energy. Irradiation raised resistivity of the film and lowered the residual-resistivity ratio (RRR). AC susceptibility measurements were also consistent with these findings. This research could potentially lead to more efficient and powerful superconducting devices and a better understanding of superconducting materials.