• 한국주조공학회지
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• 제22권4호
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• pp.174-183
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• 2002

Twin-roll process is a relatively new continuous casting process which can produce high-quality strip products directly, and solidification rate can reach $10^3$ to $10^4$ K/s, leading to fine and uniform microstructures with enhanced mechanical properties. The strip casting condition for producing fine Al-Sn alloy strip was obtained experimentally, and defects appearing on the strip was examined. Crack formation and surface quality of the strip was found to depend mainly on process parameters such as melt temperature, roller gap and rolling speed. Sn structure of network type was observed in Al-20Sn and Al-40Sn alloy strips, and cell spacing of Al-40Sn alloy was smaller than that of Al-20Sn. Banding strength of the heat treated specimens increased with increasing of soaking time and temperature, and bonding strength of Al-20Sn alloy was more superior than that of Al-40Sn alloy. However wear resistance of Al-40Sn alloy contained large amount of soft Sn which possess good anti-friction characteristics was superior than that of Al-20Sn alloy.

• 한국결정성장학회지
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• 제4권3호
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• pp.294-305
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• 1994

초음파 분무법에 의한 $SnO_2(:F)$박막의 제막시 DBDA와 $SnCl_4.5H_2O$를 출발물질로 사용하은 경우 제막조건이 전기적, 광학적 그리고 표면형상 드의 특성에 미치는 영향에 대해 조사하였다. 박막의 비저항은 출발물질에 관계없이 용액내의 F/Sn의 비가 0.6일 때까지는 급격히 증가하였으며, $SnO_2.5H_2O$를 출발물질로 사용한 경우 DBDA의 경우보다 낮았다. 용액내의 F/Sn의 비가 1일 때 출발물질로서, $SnO_2.5H_2O$과 DBDA를 사용한 경우 광투과율은 각각 83%와 85%로서 DBDA 사용한 경우가 다소 높았다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권6호
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• pp.854-859
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• 2016

Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.

• 한국분말재료학회지
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• 제14권5호
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• pp.287-291
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• 2007

Oxidation behavior and microstructural characteristics of nano-sized Sn powder were studied. DTA-TG analysis showed that the Sn powder exhibited an endothermic peak at $227^{\circ}C$ and exothermic peak at $560^{\circ}C$ with an increase in weight. Based on the phase diagram consideration of Sn-O system and XRD analysis, it was interpreted that the first peak was for the melting of Sn powder and the second peak resulted from the formation of $SnO_2$ phase. Microstructural observation revealed that the $SnO_2$ powder, heated to $1000^{\circ}C$ under air atmosphere, consisted of agglomerates with large particle size due to the melting of Sn powder during heat treatment. Finally, fine $SnO_2$ powders with an average size of 50nm can be fabricated by controlled heat treatment and ultrasonic milling process.

• Journal of Welding and Joining
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• 제20권1호
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• pp.97-102
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• 2002

The growth kinetics of intermetallic compound layers formed between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad by solid stateisothermal aging were examined. The interfacial reaction between the eutectic Sn-3.5Ag solder and the Cu and Ni/Cu pad was investigated at 70, 120, 150, $170^{\circ}C$ for various times. The intermetallic compound layer was composed of two phase: $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the solder and $Cu_6Sn_5$(${\varepsilon}-phase$) adjacent to the copper and on solder/Ni pad the intermetallic compound layer was $Ni_3Sn_4$. Because the values of time exponent(n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energy for layer growth of total Cu-Sn($Cu_6Sn_5 + Cu_6Sn$), $Cu_6Sn_5$, $Cu_3Sn$ and $Ni_3Sn_4$ intermetallic compound were 64.82kJ/mol, 48.53kJ/mol, 89.06kJ/mol and 71.08kJ/mol, respectively.

• Bulletin of the Korean Chemical Society
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• 제5권1호
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• pp.3-16
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• 1984

The effect of solvent on the dipole moments for (chloromethyl) stannanes has been investigated by applying EHT calculation for the isomers of trigonal bipyramidal Sn(Ⅳ)$Cl_4X$ and $Cl_n$Sn(Ⅳ) $(CH_2Cl)_{4-n}$, octahedral Sn(Ⅳ)$Cl_42X$ and $Cl_nSn$(Ⅳ)$(CH_2Cl)_{4-n}$ 2X type complexes in dioxane and ethylacetate solutions (X: dioxane or ethylacetate). For Sn(Ⅳ)$Cl_4$ in dioxane solution, the calculated dipole moment for the trigonal bipyramidal Sn(Ⅳ)$Cl_4X$ type complex [isomer (b)] is closer to the experimental dipole moment than octahedral Sn(Ⅳ)$Cl_4X$2X type complexes. This calculated dipole moment suggests that Sn(Ⅳ)$Cl_4X$ may have the trigonal bipyramidal structure in dioxane solution. However, the calculated dipole moment for octahedral $Cl_3$Sn(Ⅳ) ($CH_2$Cl)2X type complex [Isomer (d)], ClSn(Ⅳ)(CH2Cl)32X type complex [Isomer(k)] and Cl2Sn(Ⅳ)(CH2Cl)22X type complex [Isomer(h)] are closer to the experimental dipole moments than other isomers for octahedral complexes and trigonal bipyramidal complexes. Such theoretical results indicate that $Cl_3Sn$(Ⅳ )($CH_2Cl$), ClSn(Ⅳ)$(CH_2Cl)_3$ and $Cl2Sn$(Ⅳ)$(CH_2Cl)_2$ complexes may have octahedral structures, Isomer(d), (k) and (h) in ethylacetate solution, respectively.

• 대한금속재료학회지
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• 제46권9호
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• pp.585-592
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• 2008

Flip-chip bonding using Cu-Sn mushroom bumps composed of Cu pillar and Sn cap was accomplished, and the contact resistance and the thermal cycling reliability of the Cu-Sn mushroom bump joints were compared with those of the Sn planar bump joints. With flip-chip process at a same bonding stress, both the Cu-Sn mushroom bump joints and the Sn planar bump joints exhibited an almost identical average contact resistance. With increasing a bonding stress from 32 MPa to 44MPa, the average contact resistances of the Cu-Sn mushroom bump joints and the Sn planar bump joints became reduced from $30m{\Omega}/bump$ to $25m{\Omega}/bump$ due to heavier plastic deformation of the bumps. The Cu-Sn mushroom bump joints exhibited a superior thermal cycling reliability to that of the Sn planar bump joints at a bonding stress of 32 MPa. While the contact resistance characteristics of the Cu-Sn mushroom bump joints were not deteriorated even after 1000 thermal cycles ranging between $-40^{\circ}C$ and $80^{\circ}C$, the contact resistance of the Sn planar bump joints substantially increased with thermal cycling.

• 마이크로전자및패키징학회지
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• 제21권4호
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• pp.97-103
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• 2014

다양한 무연솔더합금 가운데 Sn-58Bi solder는 저융점이며 상대적으로 높은 인장강도를 갖고 있지만 취성적이라는 단점을 갖고 있다. 이러한 Sn-58Bi 솔더의 기계적 강도를 보완하기 위해 epoxy를 함유한 Sn-58Bi 솔더가 연구되어져왔다. 본 연구는 Sn-58Bi 솔더와 Sn-58Bi 에폭시 복합솔더를 이용하여 PCB 기판에 접합한 후, 시효처리에 따른 솔더/기판 계면 미세구조와 기계적 특성변화를 연구하였다. OSP 표면처리된 PCB 기판에 솔더볼을 형성 한 후 85, 95, 105, $115^{\circ}C$에서 100~1000 시간동안 시효처리하였으며, 기계적 특성평가로 저속전단시험을 진행하였다. 시효 처리 시간 및 온도의 증가에 따라 Cu6Sn5 금속간화합물층은 성장하였으며 Sn-58Bi 솔더 금속간화합물층이 Sn-58Bi 에폭시 복합솔더보다 두꺼웠다. 전단시험 결과, Sn-58Bi 에폭시 복합솔더가 Sn-58Bi 솔더보다 약 2배 높은 전단강도 값을 나타냈으며 시효시간이 증가할수록 전단강도 값은 감소하였다.

• 한국재료학회지
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• 제10권11호
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• pp.770-777
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• 2000

기계적 합금화 공정으로 제조한 $1{\mu\textrm{m}}$ 이하 크기의 $Cu_6Sn_5$를 63Sn-37Pb 솔더합금에 첨가하여, $Cu_6Sn_5$ 첨가분율에 따른 미세구조와 기계적 성질을 Cu를 첨가한 솔더합금과 비교하였다. $Cu_6Sn_5$를 첨가한 솔더합금에 비해 Cu를 첨가한 솔더합금에서 첨가분율에 따른 $Cu_6Sn_5$ 함량의 증가와 크기 성장의 정도가 더욱 현저하게 발생하였다. Cu를 첨가한 솔더합금에 비해 $Cu_6Sn_5$를 첨가한 솔더합금에서 항복강도의 향상 정도는 저하하였으나, 더 높은 최대인장강도를 얻을 수 있었다. 1~9 vol%의 $Cu_6Sn_5$를 첨가함에 따란 63Sn-37Pb 솔더합금의 항복강도가 23 MPa에서 36MPa 정도로 증가하였으며, 1~9vol%의 Cu 첨가시에는 항복강도가 40 MPa로 향상되었다. 각기 5 vol%의 $Cu_6Sn_5$와 Cu를 첨가함에 따라 63Sn-37Pb 솔더합금의 인장강도가 34.7 MPa에서 45.3MPa and to 43.1 MPa로 향상되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.640-644
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• 2000

Sn-3.5Ag 무연합금을 Cu 및 Alloy42 리드프레임에 납땜접합(solder joint)하고 미세조직, 젖 음성, 전단강도, 시효효과를 측정하여 비교하였다. CU의 경우, 납땜의 Sn기지상안에 Ag$_3$Sn$_{5}$상이, 그리고 땜납/리드프레임의 경계면에는 1~2$\mu\textrm{m}$ 두께의 Cu$_{6}$Sn$_{5}$상이 형성되었다. Alloy42의 경우, 기지상내에는 낮은 밀도의 Ag$_3$Sn상만이, 그리고 계면에는 0.5~1.5$\mu\textrm{m}$ 두께의 FeSn$_2$이 형성되었다. 한편. Cu에 비해 Alloy42 리드프레임에서 전단강도는 낮았으며, 시효 시간에 따라 전단강도는 모두 감소하였다. 18$0^{\circ}C$에서 1주일간 시효처리 후, Cu 리드프레임에는 계면에 η-Cu$_{6}$Sn$_{5}$ 층이 15-20$\mu\textrm{m}$ 성장하였고, A11oy42 리드프레임에는 기지상내에 AgSn$_3$이 조대하게 성장하였으며, 계면에는 FeSn$_2$층만이 약 $1.5\mu\textrm{m}$로 성장하였다.성장하였다.