• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.8-11
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• 2007

The new technologies in mobile display developed in SEC are briefly reviewed. For a differentiation, SEC's LTPS line is based on SLS (Sequential Lateral Solidification) technology. In this paper, the characteristics of SEC's SLS in recent and future mobile displays were discussed. The microstructure produced by SLS crystallization is dependent on SLS process conditions such as mask design, laser energy density, and pulse duration time. The microstructure and TFT (Thin Film Transistor) performance are closely related. For an optimization of TFT performance, SLS process condition should be adjusted. Other fabrication processes except crystallization such as blocking layer, gate insulator deposition and cleaning also affect TFT performance. Optimized process condition and tailoring mask design can make it possible to produce high quality AMOLED devices. The TFT non-uniformity caused by laser energy density fluctuation could be successfully diminished by mixing technology.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1389-1393
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• 2007

Selective Laser Sintering (SLS) is currently recognized as a leading process in the new field of solid freeform fabrication (SFF). It is used to fabricate in a short time any 3 dimensional shapes by layer-by-layer sintering of polymer, ceramic or metal powder. To develop this SFF system, it needs effective laser scanning path, temperature and z-axis control for lamination. Therefore, in this study, through the application of control algorithm for sintering process have performed, temperature evaluation for sintering process has performed and the manufacturing sample using SLS process.

• Journal of Information Display
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• v.8 no.4
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• pp.15-18
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• 2007

In this paper, we investigated the SLS process to control grain boundary(GB) location in TFT channel region, and it has been found to be applicable for locating the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analysed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.3
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• pp.516-524
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• 2012

Selective Laser Sintering(SLS) system consists of various element technologies. Main components of the system include a position control system, a speed control system of the roller, and nitrogen atmosphere furtherance for the powdered sintering. Other systems which make the core of the SLS system are build room and the feed room for powder epitaxial, a temperature control system, and a scan path generator for the laser. The powder material for laser sintering is necessary to produce prototypes in Solid Freeform Fabrication(SFF) based on SLS process. This powder material is sintered in powder room using $CO_2$ laser after spreading evenly using roller to reproduce mold via SFF. This study addresses an SFF system by using the SLS process which applies single laser system to enable manufacturing of 3D shape. And to evaluate applicability of the single laser system, experiments were conducted with optimal fabricating process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.229-235
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• 2002

This paper presents the fabrication of polycrystalline thin film transistor(TFT) using sequential lateral solidification(SLS) of amorphous silicon. The fabricated SLS TFT showed high Performance suitable for active matrix liquid crystal display(AMLCD). The SLS process involves (1) a complete melting of selected area via irradiation through a patterned mask, and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the super lateral growth(SLG) distance so that lateral growth extended over a number of iterative steps. The SLS experiment was performed with 550$\AA$ a-Si using 308nm XeCl laser having $2\mu\textrm{m}$ width. Irradiated laser energy density is 310mJ/$\textrm{cm}^2$ and pulse duration time was 25ns. The translation distance was 0.6$\mu$m/pulse, 0.8$\mu$m/pulse respectively. As a result, a directly solidified grain was obtained. Thin film transistors (TFTs) were fabricated on the poly-Si film made by SLS process. The characteristics of fabricated SLS p -type poly-Si TFT device with 2$\mu\textrm{m}$ channel width and 2$\mu\textrm{m}$ channel length showed the mobility of 115.5$\textrm{cm}^2$/V.s, the threshold voltage of -1.78V, subthreshold slope of 0.29V/dec, $I_{off}$ current of 7$\times$10$^{-l4}$A at $V_{DS}$ =-0.1V and $I_{on}$ / $I_{off}$ ratio of 2.4$\times$10$^{7}$ at $V_{DS}$ =-0.1V. As a result, SLS TFT showed superior characteristics to conventional poly-Si TFTs with identical geometry.y.y.y.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.16-19
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• 2007

In this paper, we present work that has been carried out using the SLS process to control grain boundary(GB) location in TFT channel region and it is possible to locate the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analyzed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.509-512
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• 2006

In this paper, we proposed the novel device and process design to enhance the uniformity of low-temperature poly-Si TFTs fabricated by sequential lateral solidification (SLS). The proposed design schemes can avert the conventional two-shot SLS process-induced issues. Moreover, different design considerations between conventional excimer laser crystallization and the SLS process were also proposed and discussed.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1404-1409
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• 2007

Polymers for laser sintering were needed in order to fabricate the articles with the three-dimensional duplication equipment of SLS (selective laser sintering) process. The thermal properties, particle size, distribution, and shape of polymer powder had a close relation with the processibility of laser sintering. In this study, we prepared new polymer powders with uniform size and higher bulk density by wet process. Wet process consists of several finely-controlled steps such as dissolution, nucleation, propagation and crystallization. Several additives were added to improve the thermal, rheological, and flow properties.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.05a
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• pp.282-285
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• 2009

Selective laser sintering (SLS) is a fast growing process of rapid production fur metallic based parts. To restore damaged mold surface using SLS, single layer experiments of $20{\mu}m$ Fe-Cr powder was performed under various heat input. Process window of $20{\mu}m$ Fe-Cr powder provided feasible process parameters for the smooth regular surface. To estimate coherence between melted powder and basematal, tendency of hardness distribution has been observed. Hardness of melted zone and remelted zone was diversified from 5GPa to 6.5GPa. It is over 2 times compared of hardness of basemetal. Average surface roughness of each direction on surface of melted powder was measured. Experimental results show that the mold restoring process using SLS can be successfully applied in the mold repair industry.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.245-247
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• 2003

We have previously shown that single-crystal Si regions on glass substrates can be obtained by crystallizing as-deposited a-Si films using a specific version of the SLS process, referred to as dot-SLS Such single-crystal islands can, for instance, be used for manufacturing of high-performance TFTs that are expected to become increasingly more relevant in the future. In this paper, we demonstrate that the dot-SLS process can be implemented using a continuous-scan SLS scheme that enables the attainment of high crystallization rates that are desired for industrial applications. We will furthermore report on recent experimental findings regarding the nature of the defects that can be created during the process.