Formation of single-crystal Si islands via continuous-scan Sequential Lateral Solidification

We have previously shown that single-crystal Si regions on glass substrates can be obtained by crystallizing as-deposited a-Si films using a specific version of the SLS process, referred to as dot-SLS Such single-crystal islands can, for instance, be used for manufacturing of high-performance TFTs that are expected to become increasingly more relevant in the future. In this paper, we demonstrate that the dot-SLS process can be implemented using a continuous-scan SLS scheme that enables the attainment of high crystallization rates that are desired for industrial applications. We will furthermore report on recent experimental findings regarding the nature of the defects that can be created during the process.