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The Characterization of Poly-Si Thin Film Transistor Crystallized by a New Alignment SLS Process  

Lee, Sang-Jin (LG.Philips LCD Inc. LG R&D Center, Member, KIDS)
Yang, Joon-Young (LG.Philips LCD Inc. LG R&D Center)
Hwang, Kwang-Sik (LG.Philips LCD Inc. LG R&D Center)
Yang, Myoung-Su (LG.Philips LCD Inc. LG R&D Center, Member, KIDS)
Kang, In-Byeong (LG.Philips LCD Inc. LG R&D Center, Member, KIDS)
Publication Information
Journal of Information Display / v.8, no.4, 2007 , pp. 15-18 More about this Journal
Abstract
In this paper, we investigated the SLS process to control grain boundary(GB) location in TFT channel region, and it has been found to be applicable for locating the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analysed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.
Keywords
Poly-Si; SLS crystallization; Grain boundary;
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