• Journal of the Korean Vacuum Society
• /
• v.2 no.4
• /
• pp.399-403
• /
• 1993

Si(111)7 $\times$ 7 위에 Mg를 흡착시켜 표면구조의 변화를 RHEED(Reflection High Energy Electron diffraction) 와 XPS(X-ray PhotoelectronSpectroscopy)를 이용하여 연구하였다. RT ~20$0^{\circ}C$까지의 기판온도에서 증착량의 증가에 따라 표면구조는 (7$\times$7)에서 diffused (1$\times$1) 그리고 (2 3 3 $\times$2√3√3-R30$^{\circ}$) 구조로 변화하였다. 또한, 기판온도를 증가시킴에 따라 (1$\times$1), three domain(3$\times$1) 등의 구조를 볼 수 있었고, 특히 , $450^{\circ}C$의 기판온도에서는 single domain (3$\times$1) 구조를 최초로 관측하였다. 이렇게 형성된 각 구조에 대한 Mg KLL과 Si2p의 XPS peak intensity ratio를 증착량의 증가에 따라 측정하여 각기 다른 온도에서의 Mg 성장에 대한 메카니즘을 제시하였다.

• Journal of the Korean Chemical Society
• /
• v.50 no.2
• /
• pp.137-140
• /
• 2006

In this report, Europium doped strontium barium gallium silicate ((Sr,Ba)2Ga2SiO7:Eu2+) phosphor has been synthesized by conventional solid-state method and investigated luminescent characteristic. Appropriate proportions of the raw materials were mixed in an agate mortar with acetone to obtain starting mixtures. Also, this phosphor was prepared by simple process under the reduction atmosphere (25% H2/75% N2). This phosphor can be applicated to the green phosphor for white LED because it has green emission band (513 nm), which emits efficiently under the 405nm excitation energy.

• Journal of the Korean Society for Heat Treatment
• /
• v.35 no.1
• /
• pp.8-19
• /
• 2022

The metallic implant materials are widely used in biomedical industries due to their specific mechanical strenth, corrosion registance, and superior biocompatability. These metallic materials, however, suffer from the stress-shielding effect and the generation of artifacts in the magnetic resonance imaging exam. In the present study, we develope a Zr-based alloys for the biomedical implant materials with low elastic modulus and low magnetic susceptibility. The Zr-7Si-xSn alloys were fabricated by an arc melting process. The elastic modulus was 24~31 GPa of the zirconium-based alloy. The average magnetic susceptibility value of the Zr-7Si-xSn alloy was 1.25 × 10^-8cm³g^-1. The average I_corr value of the Zr-7Si-xSn alloy was 0.2 ㎂/cm². The Sn added zirconium alloy, Zr-7Si-xSn, is very interested and attractive as a biomaterial that reduces the stress-shielding effect caused by the difference of elastic modulus between human bone and metallic implant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.236-238
• /
• 1997

A cellular power amplifier using an APCVD(Atmospheric Pressure Chemical Vapor Deposition)-grown SiGe base HBT of ETRI has been designed with a linear simulation CAD. The Si/SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0 GHz and a maximum oscillation frequency(f$_{max}$) of 16.1 GHz with a pad de-embedding A packaged power Si/SiGe HBT with an emitter area of 2$\times$8$\times$80${\mu}{\textrm}{m}$$^2$typically shows a f$_{T}$ of 4.7 GHz and a f$_{max}$ of 7.1 GHz at a collector current (Ic) of 115 mA. The power amplifier exhibits a Forward transmission coefficient(S21) of 13.5 dB, an input and an output reflection coefficients of -42 dB and -45 dB respectively. Up to now the III-V compound semiconductor devices hale dominated microwave applications, however a rapid progress in Si-based technology make the advent of the Si/SiGe HBT which is promising in low to even higher microwave range because of lower cost and relatively higher reproducibility of a Si-based process.ess.ess.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.7
• /
• pp.606-610
• /
• 2007

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC thin films, in which they were deposited on the oxidized Si substrate by APCVD method according to growth temperature. Since the phonon modes were not measured for $0.4{\mu}m$ thick 3C-SiC, $2.0{\mu}m$ thick 3C-SiC deposited on the oxidized Si at $1180^{\circ}C$, in which TO (transverse optical mode) and LO (longitudinal optical mode) phonon modes were appeared at 794.4 and $965.7cm^{-1}$, respectively. The broad FWHM (full width half maximum) can explain that the crystallinity of 3C-SiC deposited at $1180^{\circ}C$ becomes polycrystalline instead of disorder crystal. Additionally, the ratio of intensity $I_{LO}/I_{TO}{\approx}1.0$ of 3C-SiC indicates that the crystal disorder of $3C-SiC/SiO_2/Si$ is small. Compared poly $3C-SiC/SiO_2$ with $SiO_2/Si$ interfaces, $1122.6cm^{-1}$ phonon mode was measured which may belong to C-O bonding and two phonon modes, 1355.8 and $1596.8cm^{-1}$ related to D and G bands of C-C bonding in the Raman range of 200 to $2000cm^{-1}$.

• Korean Journal of Materials Research
• /
• v.14 no.5
• /
• pp.310-314
• /
• 2004

Mechanical alloying (MA) of Ti-50.0～66.7at%Si powders was carried out in a high-energy ball mill, and in situ thermal analysis was also made during MA. In order to classify the synthesis behavior of the powders with respect to at%Si, the synthesis behavior during MA was investigated by in situ thermal analysis and X-ray diffraction (XRD). In situ thermal analysis curves and XRD patterns of Ti-50.0～59.6at%Si powders showed that there were exothermic peaks during MA, indicating TiSi, $TiS_2$, and $Ti_{5}$ $Si_4$ phase formation by a rapid exothermic reaction of self-propagating high-temperature synthesis (SHS). Those of Ti-59.8～66.7 at%Si powders, however, showed that there were no peaks during MA, indicating any Ti silicide was not synthesised until MA 240 min. For Ti-50.0～59.6at%Si powders, the critical milling times for SHS increased from 34.5 min to 89.5 min and the temperature rise, $\Delta$T (=peak temperature-onset temperature) decreased form $26.2^{\circ}C$ to $17.1^{\circ}C$ as at%Si increased. The critical composition of Si for SHS reaction was found to be 59.6at% and the critical value of the negative heat of formation of Ti-59.6at%Si to be -1.48 kJ/g.

• Korean Journal of Materials Research
• /
• v.17 no.7
• /
• pp.358-360
• /
• 2007

Cobalt subtitution on NiSi is investigated by using an ab-initio calculation. Firstly, a relaxed NiSi structure is calculated and the calculated lattice parameters are compared with experimentally determined lattice parameters. The calculated values are smaller than the experimental values by about 2%. As the calculation is based on 0 K, and the experimental measurement is performed at room temperature, those values are in good agreement. Next, a Co atom substitutes a Ni and Si site, respectively, to evaluate the preferable site between them. Co prefers Ni site to Si site. The calculated total energy also indicates that the Co substitution to Ni site stabilizes the NiSi structure. Therefore, the thermal stability of NiSi with Co addition can be achieved by the structure stabilization of NiSi by Co substitution into Ni site of NiSi.

• Korean Journal of Materials Research
• /
• v.15 no.7
• /
• pp.480-485
• /
• 2005

Sc has been known to be an very effective ppt-hardening element in Al and Al alloys and also to be effective in modification of eutectic Si in hypoeutectic Al-Si alloys. The modification mechanism of Sc is different from that of the traditional modifier Sr in Al-Si alloys. In the present study the effects of Sc on the primary and eutectic Si in hypereutectic Al-Si alloys were investigated with evaluating the microstructures with OM, EPMA and EBSD methods. The results represent that Sc has only a small effect on primary Si when added less than $0.8wt\%$. However, when Sc addition leading to the precipitation of metallic Sc within primary Si reaches $1.6wt\%$, very coarse primary Si occurs.

• Journal of the Korean Society for Precision Engineering
• /
• v.16 no.11
• /
• pp.148-157
• /
• 1999

The objective of this study is to investigate the effect of three main chemical compositions(Mg, Zn, Si) on extrudability of 7xxx Al alloy with high tensile strength. A few Al alloys based on 7xxx alloys were metal mold cast with various weight*%) of Mg 0.3-1.2%, Zn 5.0-8.0% and Si 0.4-0.7%, to envestigate the effects of extrudability, as well as mechanical properties. To measure the extrudability of cast billets, maximum extrusion pressure and surface temperature at die exit before tearing occurs were obtained by experiment and simulation of thermo-viscoplastic F.E.M. Also the yield and tensile strength of extruded products were tested.

• Journal of the Korean Chemical Society
• /
• v.52 no.1
• /
• pp.47-51
• /
• 2008

A simple synthetic strategy is described for one-pot synthesis of 5,7-diaryl-4,4-dimethyl-4,5,6,7-tetrahydropyridino[3,4-d]-1,2,3-selenadiazoles (11-15) in the presence of NaHSO4.SiO2 as a heterogeneous catalyst in dry media under microwave irradiation.Key words: One-pot synthesis, 3,3-Dimethyl-2,6-diarylpiperidin-4-one; 1,2,3-Selenadiazoles; Selenium dioxide; NaHSO4.SiO2 Heterogeneous catalyst.