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http://dx.doi.org/10.4313/JKEM.2007.20.7.606

Raman Scattering Characteristics on 3C-SiC Thin Films Deposited by APCVD Method  

Jeong, Jun-Ho (울산대학교 전기전자정보시스템공학부)
Chung, Gwiy-Sang (울산대학교 전기전자정보시스템공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.7, 2007 , pp. 606-610 More about this Journal
Abstract
This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC thin films, in which they were deposited on the oxidized Si substrate by APCVD method according to growth temperature. Since the phonon modes were not measured for $0.4{\mu}m$ thick 3C-SiC, $2.0{\mu}m$ thick 3C-SiC deposited on the oxidized Si at $1180^{\circ}C$, in which TO (transverse optical mode) and LO (longitudinal optical mode) phonon modes were appeared at 794.4 and $965.7cm^{-1}$, respectively. The broad FWHM (full width half maximum) can explain that the crystallinity of 3C-SiC deposited at $1180^{\circ}C$ becomes polycrystalline instead of disorder crystal. Additionally, the ratio of intensity $I_{LO}/I_{TO}{\approx}1.0$ of 3C-SiC indicates that the crystal disorder of $3C-SiC/SiO_2/Si$ is small. Compared poly $3C-SiC/SiO_2$ with $SiO_2/Si$ interfaces, $1122.6cm^{-1}$ phonon mode was measured which may belong to C-O bonding and two phonon modes, 1355.8 and $1596.8cm^{-1}$ related to D and G bands of C-C bonding in the Raman range of 200 to $2000cm^{-1}$.
Keywords
Raman spectra; Poly 3C-SiC; APCVD; Stress; M/NEMS;
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Times Cited By KSCI : 1  (Citation Analysis)
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