1 |
N. Jin, G. Quancheng, S. Guosheng, and L. Zhongli, 'The ICP etching technology of 3C-SiC films', J. Phys. Conf. Ser., Vol. 34, p. 511, 2006
DOI
ScienceOn
|
2 |
D. W. Feldman, J. H. Parker, Jr. W. J. Choyke, and L. Patrick, 'Phonon dispersion curves by raman scattering in SiC, ploytypes 3C, 4H, 6H, 15R, and 21R', Phys. Rev. B, Vol. 173, p. 787, 1968
DOI
|
3 |
A. Jorio, A. G. Souza Filho, V. W. Brar, A. K. Swan, M. S. Ulnu, B. B. Goldberg, A. Righi, J. H. Hafner, C. M. Lieber, R. Saito, G. Dresselhaus, and M. S. Dresselhaus, 'Polarized resonant raman study of isolated single-wall carbon nanotubes: symmetry selection rules, dipolar and multipolar antenna effects', Phys. Rev. B, Vol. 65, p. 1214021, 2002
|
4 |
D. Olego, M. Cardona, and P. Vogl, 'Pressure dependence of the optical phonons and transverse effective charge in 3C-SiC', Phys. Rev. B, Vol. 25, No. 6, p. 3878, 1982
DOI
|
5 |
W. L. Zhu, J. L. Zhu, S. Nishino, and G. Pezzotti, 'Spatially resolved raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations', Appl, Surf. Sci., Vol. 252, p. 2346, 2006
DOI
ScienceOn
|
6 |
F. Tuinstra and J. L. Koenig, 'Raman spectrum of graphite', J. Chem. Phys., Vol. 53, p. 1126, 1970
DOI
|
7 |
A. C. Ferrari and J. Robertson, 'Interpretation of Raman spectra of disordered and amorphous carbon', Phys. Rev. B, Vol. 61, p. 14095, 2000
DOI
ScienceOn
|
8 |
C. A. Zorman and M. Mehregany, 'Silicon carbide for MEMS and NEMS', Proc. IEEE, Vol. 2, p. 1109, 2002
|
9 |
P. M. Sarro, 'Silicon carbide as a new MEMS technology', Sensors & Actuators A, Vol. 82, p. 210, 2000
DOI
ScienceOn
|
10 |
L. Jiang, R. Cheung, J. Hedley, M. Hassan, A. J. Harris, J. S. Burdess, M. Mehregany, and C. A. Zorman, 'SiC Cantilever resonators with electrothermal actuation', Sensors & Actuators A, Vol. 128, p. 376, 2006
DOI
ScienceOn
|
11 |
M. Mehregany and C. A. Zorman, 'SiC MEMS:. Opportunities and challenges for applications in harsh. environments', Thin Solid Films, Vol. 355-356, p. 518, 1999
|
12 |
R. Hull, 'Properties of crystalline silicon', INSPEC, London, 1999
|
13 |
D. N. Talwar and J. C. Sherbondy, 'Thermal expansion coefficient of 3C-SiC', Appl, Phys. Lett., Vol. 67, No. 22, p. 3301, 1995
DOI
|
14 |
D. Gao, B. J. Wijesundara, C. Carraro, R. T. Howe, and R. Maboudian, 'Recent progress toward a manufacturable polycrystalline SiC surface micromachining technology', IEEE Sensors J., Vol. 4, No.4, p. 441, 2004
DOI
ScienceOn
|
15 |
S. H. Kim, C. E. Kim, and Y. J. Oh, 'Influence of buffer layer on the crystalline structure and dielectric property of thin film by sol - gel processing', J. of Mater. Sci. Lett., Vol. 16, No. 4, p. 257, 1997
DOI
ScienceOn
|
16 |
정귀상, 김강산, 한기봉, 'HMDS 단일 전구체를 이용한 다결정 3C-SiC 박막 성질', 전기전자재료학회논문지, 20권, 2호, p. 156, 2007
과학기술학회마을
DOI
|
17 |
G. V. Zaia, 'Epitaxial growth of Si and 3C-SiC by chemical vapor deposition', Technischen Uni., Ph.D. Thesis, 2002
|
18 |
H. Harima, 'Raman scattering characterization on SiC', Microelectron. Eng., Vol. 83, p. 126, 2006
DOI
ScienceOn
|
19 |
Z. C. Feng, J. Mascarenhas, W. J. Choyke, and J. A. Powell, 'Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100) Si', J. Appl. Phys., Vol. 64, p. 3176, 1988
DOI
|