• Journal of the Korean Vacuum Society
• /
• v.10 no.1
• /
• pp.27-30
• /
• 2001

Electromigration Phenomena in Al-1%Si thin film interconnections under DC and PDC conditions were investigated. Thin film interconnections with $SiO_2$ and PSG/$SiO_2$ dielectric passivation layer were formed by a standard photolithography process method and test line lengths were 100, 400, 800, 1200, and 1600 $\mu\textrm{m}$. The current density of $1.19\times10^7\textrm{A/cm}^2$ was stressed in Al-1%Si thin film interconnections under DC condition. The current density of $1.19\times10^7\textrm{A/cm}^2$ was also applied under PDC condition at the frequency of 1 Hz with the duty factor of 0.5. The electromigration resistance of PSG/SiO2 dielectric passivation test line was stronger than $SiO_2$ dielectric passivation test line. The lifetime under PDC was 2-4 times longer than DC condition. As the thin film interconnection line increased, the lifetime decreased and saturated over the critical length. Failure patterns by an electromigration were dominated by void-induced electrical open and hillock-induced electrical short.

• Journal of the Korean Ceramic Society
• /
• v.33 no.11
• /
• pp.1209-1216
• /
• 1996

MoSi2-Al2O3 composites were prepared by thermal explosion mode of self-propagating high temperature syn-thesis (SHS) using element powders of MoO3 Mo Si and Al. The combustion products of MoSi2 which have 10, 20, 30 and 40 wt% Al2O3 showed the molten state in the range of Mo to MoO3 6:1-9.5:1, 2:1-8:1, 1:1-5:1, and 1:1-3:1 (molar ratio) respectively. The combustion products which made least seperation the molten phase from the slag phase were in Mo/MoO3=9, 5:1, 8:1, 5:1 and 3:1 (molar ratio) respectively. Particles size of MoSi2 and Al2O3 in the combustion product were decreased as the molar ratio of Mo to MoO3 increase. By XRD analysis only MoSi2 and $\alpha$-Al2O3 peaks were identified in the combusion products, In case of MoSi2 containing 20wt% Al2O3 5.1wt% Al existed into MoSi2 grains and 30.7wt% Si and 7.7wt% Mo existed into Al2O3 grains. The relative density of MoSi2 containing 10, 20, 30 and 40 wt% Al2O3 were 82.7, 85.2, and 81.9% respectively. The fracture strength of MoSi2-Al2O3 composites increased with increasing Al2O3 and that of MoSi2-20wt% Al2O3 composite was 195 MPa.

• Journal of the Korean Vacuum Society
• /
• v.3 no.3
• /
• pp.275-279
• /
• 1994

Low Energy Electron Diffraction(LEED)와 Synchrotron Radiation Photoelectron Spe-ctroscopy (SRPES)를 이용하여 $Si(111)7{\times}7$ 표면위에 Mg의 흡착에 의한 초기계면과 실리사이드의 형성에 대하여 연구하였다. 기판온도를 상온으로 유지하는 경우 증착량의 증가에 따라 LEED pattern은 diffuse 7${\times}$7 diffuse 1${\times}$1, $2/3sqrt{3}{\times}2/3sqrt{3} R30^{\cdot}$ 구조로 변화하였다. $300^{\cdot}C$의 기판온도에서 관측되는 1${\times}$1 구조에 대한 surface sensitive Si 2p core level spectrum의 fitting 결과로부터 이 1${\times}$1구조는 적층성장한 Mg2Si 박막에 의한 구조임을 알수 있다. 그러나 이 1${\times}$1구조를 가진 Mg2Si 박막이 성장하지 못함을 예상할 수 있다. 그결과 Mg의 계속된 증착에도 불구하고 비정질의 Mgqkr막이 성장하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.509-512
• /
• 1999

Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

• Journal of the Korean Chemical Society
• /
• v.56 no.4
• /
• pp.448-458
• /
• 2012

In order to develop alloy resistance in aggressive sulphat ion, the corrosion behavior of metallic glasses $Ni_{92{\cdot}3}Si_{4.5}B_{32}$, $Ni_{82,3}Cr_7Fe_3Si_{4.5}B_{3.2}$ and $Ni_{75.5}Cr_{13}Fe_{4.2}Si_{4.5}B_{2.8}$ (at %) at different concentrations of $H_2SO_4$ solutions was examined by electrochemical methods and Scanning Electron Microscope (SEM) and X-ray Photoelectron Microscopy (XPS) analyses. The corrosion kinetics and passivation behavior was studied. A direct proportion was observed between the corrosion rate and acid concentration in the case of $Ni_{92{\cdot}3}Si_{4.5}B_{32}$ and $Ni_{75.5}Cr_{13}Fe_{4.2}Si_{4.5}B_{2.8}$ alloys. Critical concentration was observed in the case of $Ni_{82,3}Cr_7Fe_3Si_{4.5}B_{3.2}$ alloy. The influence of the alloying element is reflected in the increasing resistance of the protective film. XPS analysis confirms that the protection film on the $Ni_{92{\cdot}3}Si_{4.5}B_{32}$ alloy was NiS which is less protective than that formed on Cr containing alloys. The corrosion rate of $Ni_{82,3}Cr_7Fe_3Si_{4.5}B_{3.2}$ and $Ni_{75.5}Cr_{13}Fe_{4.2}Si_{4.5}B_{2.8}$. alloys containing 7% and 13% Cr are $7.90-26.1{\times}10^{-3}$ mm/y which is lower about 43-54 times of the alloy $Ni_{92{\cdot}3}Si_{4.5}B_{32}$ (free of Cr). The high resistance of $Ni_{75.5}Cr_{13}Fe_{4.2}Si_{4.5}B_{2.8}$ alloy at the very aggressive media may due to thicker passive film of $Cr_2O_3$ which hydrated to hydrated chromium oxyhydroxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.45-45
• /
• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Journal of the Korean institute of surface engineering
• /
• v.31 no.6
• /
• pp.345-358
• /
• 1998

The evolution of surface roughness and morphology in epitaxial Si and $Si_{0.7}Ge{0.3}$ alloys grown by UHV opm-beam sputter deposition onto nominally-singular, [100]-, and [110]-mi-scut Si(001) was investigated by stomic force microscopy and trasmission electron microscopy. The evolution of surface roughness of epitaxial Si films grown at $300^{\circ}C$ is inconsistent with conventional scaling and hyperscaling laws for kineti roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contraty to previous high-temperature growth results, the presence of steps during deposition at $300^{\circ}C$ increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughnesses on vicival substrates. Strain-induced surface roughening was found to dominate in $Si_{0.7}Ge{0.3}$ alloys grown on singular Si(001) substrates at $T_S\ge450^{\circ}C$ where the coherent islands are prererentially bounded along <100> directions and eshibt {105} facetting. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures ($T_s\le 250^{\circ}C$), film surfaces roughen kinetically, due to limited adatom diffusiviry, but at far lower rates than in the higher-temperature strain-induced regime. There is an intermediate growth temperature range, however, over which alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.26-28
• /
• 1996

A high power SiGe HBT has been fabricated using APCVD(Atmospheric Pressure Chemical Vapor Deposition) and its perfermanoe has been analysed. The composition of Ge in the SiGe base was graded from 0% at the emitter-base junction to 20% at the base-collector junction. As a base electrode, titanium disilicide(TiSi$_2$) was used to reduce the extrinsic base resistance. The SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0GHz and a maximun oscillation frequency(f$_{max}$) of 16.1GHz with a pad de-embedding. The packaged high power SiGe HBT with an emitter area of 2xBx80${\mu}{\textrm}{m}$$^2$typically shows a cutoff frequency of 4.7GHz and a maximun oscillation frequency of 7.1GHz at Ic of 115mA.A.A.

• Journal of the Korean institute of surface engineering
• /
• v.36 no.2
• /
• pp.122-127
• /
• 2003

Ti - Si - N hard films were deposited on SKD11 steel substrates by a hybrid deposition system, where TiN was deposited by AIP method while Si was incorporated by sputtering one. The microstructure of Ti-Si-N films was revealed to be a composite of TiN crystallites and amorphous Si3N4 by instrumental analyses. The highest hardness value of about 45 Gpa was obtained at the Si content of around 7.7 at.%. With increase of Si content, the size of TiN crystallites was reduced and their distribution was changed from aligned to randomly orientated states. Surface roughness of Ti-Si-N film also decreased with increase of Si content.

• Korean Journal of Materials Research
• /
• v.25 no.7
• /
• pp.352-357
• /
• 2015

To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.