• 한국결정성장학회지
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• 제13권6호
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• pp.290-296
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• 2003

본 연구에서는 열화학기상증착법을 사용하여 6H-SiC 기판 위에 silane($SiH_4$)과 prophane($C_3H_8$)을 사용하여 3C-SiC 이종박막을 성장시키고 이의 성장 특성을 조사하였다. C/Si 유량 비율이 4.0, 운반기체의 유량은 5 slm이고 성장온도가 $1200^{\circ}C$인 경우의 박막성장율은 약 1.8 $\mu$m/h이었다. 성장박막의 Nomarski 표면형상, X-선 회절분광, Raman 산란 특성 및 광발광(PL) 특성 등을 측정하고 성장조건에 따른 결정성을 비교하였다. 이러한 평가를 통하여 성장온도 $1150^{\circ}C$ 이상에서 양질의 결정성 3C-SiC 이종박막이 성장점을 확인하였다.

• 한국주조공학회지
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• 제33권6호
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• pp.233-241
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• 2013

Effect of Fe and Mn contents on the castability of Al-9wt%Si-xMg-yFe-zMn alloy has been studied. The alloy was composed of ${\alpha}$-Al phase, Al+eutectic Si phase, ${\beta}$-Al5FeSi compound and chinese script ${\alpha}$-$Al_{15}(Mn,Fe)_3Si_2$ compound. ${\beta}$-$Al_5FeSi$ and ${\alpha}$-$Al_{15}(Mn,Fe)_3Si_2$ compounds assumed to effect the fluidity and shrinkage behaviors of the alloy during solidification due to the crystallization of ${\alpha}$-$Al_{15}(Fe,Mn)_3Si_2$ and ${\beta}$-$Al_5FeSi$ compounds above eutectic temperature. As Fe and Mn contents of Al-9wt%Si-0.3wt%Mg system alloy increased from 0.15wt% to 0.6wt% and from 0.3wt% to 0.7wt%, fluidity of the alloy decreased by 5.7% and 3.3%, respectively. And as Mg content of Al-9wt%Si-0.45wt%Fe-0.5wt%Mn system alloy increased from 0.3wt% to 0.4wt%, fluidity of the alloy decreased by 8.6%. When Fe content of the alloy increased from 0.15wt% to 0.6wt%, macro shrinkage ratio decreased from 6.1% to 4.1%, and micro shrinkage ratio increased from 0.04% to 0.24%. Similarly, Mn content of the alloy increased from 0.3wt% to 0.7wt%, macro shrinkage ratio decreased from 6.0% to 4.5% and micro shrinkage ratio increased from 0.12% to 0.18%. Judging from the castability of the alloy, Al-9wt%Si-0.3wt%Mg alloy with low content of Fe and Mn, 0.1wt% Fe and 0.3wt% Mn, is recommendable.

• Korean Chemical Engineering Research
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• 제51권6호
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• pp.755-759
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• 2013

Bosch 공정의 식각 단계에서 Ar을 첨가하였을 때 Si의 식각특성을 관찰하기 위하여 식각 단계에서 $SF_6$ 플라즈마만 사용한 경우와 Ar 유속비율이 20%인 $SF_6$/Ar 플라즈마를 각각 사용하여 Si을 Bosch 공정으로 식각하였다. Bosch 공정의 식각 단계에서 $SF_6$ 플라즈마에 Ar 가스를 첨가하면 $Ar^+$ 이온에 의한 이온포격이 증가하였고 이는 Si 입자의 스퍼터링을 초래할 뿐 아니라 F 라디칼과 Si의 화학반응을 가속하였다. 그 결과 식각 단계에서 20%의 Ar이 첨가되어 Bosch 공정으로 수행된 Si의 식각속도는 Ar이 첨가되지 않은 경우보다 10% 이상 빨라졌고 식각프로파일도 더욱 비등방적이었다. 이 연구의 결과는 Bosch 공정으로 Si을 식각할 때 식각속도와 식각프로파일의 비등방성을 개선하는데 필요한 기초자료로 사용될 수 있을 것으로 판단된다.

• 한국주조공학회지
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• 제41권6호
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• pp.528-534
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• 2021

본 연구는 Al-Mg-Si 합금에서 Cu가 첨가 후 자연시효와 인공시효에 따른 제2상 석출 반응이 합금의 열확산도 및 경도에 미치는 영향을 연구하였다. 연구에 사용된 Al-0.4Mg-0.2Si 합금과 Cu를 0.6 wt%, 1.0wt% 추가한 Al-Mg-Si-Cu 합금을 각각 중력 주조로 제작하고 열확산도 경도를 측정하고 석출 반응을 확인하기 위해 열량 분석을 실시 하였다. Al-Mg-Si 합금에 첨가된 Cu는 Q'상 및 θ'상과 같은 강화상 형성에 참여하여 합금의 경도와 고온 열확산도를 향상시켰다. 한편, 자연시효 시간 증가는 Al-Mg-Si-Cu 합금의 열확산도에는 큰 영향을 미치지 않았으나, 경도를 하락시키는 것으로 확인되었다.

• 한국주조공학회지
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• 제10권3호
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• pp.225-234
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• 1990

Spheroidal graphite cast irons which are Fe-3%C-(4－6)%Si-(0－0.5)%Mo were studied to improve not only heat resistance but also mechanical properties. With increasing Mo content, the graphitization was decreased and carbide volume fraction was increased. The graphite spheroidization ratio was not decreased in Fe-3%C-6%Si-Mo system cast iron with increasing Mo content, but that was decreased in Fe-3%C-4%Si-Mo system and Fe-3%C-5%Si-Mo system cast irons. Hardness was increased with the Si and Mo contents. At constant Si content, tensile strength was increased with increasing Mo content, but that was decreased at 6%Si. In the experiment of oxidation, weight gain was decreased as the Si and/or Mo content increased, but increased at 1.5%Mo content.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.261-263
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• 1997

6H-SiC single crystals were successfully grown by the self-designed sublimation apparatus and the optimum growth condition was established. The grown SiC crystals were about 33mm in diameter and 10mm in length. Carrier concentration and doping type of undopped 6H-SiC wafer grown by sublimation method were 1016∼1017/㎤ and n-type Crystallinity of grown 6H-SiC wafer was better than of Acheson seed by data of Raman spectroscopy and Double Crystal XRD. We continue to characterize the grown 6H-SiC wafer in more detail and so we will grow the high-quality 6H-SiC single crystal wafer.

• 한국표면공학회지
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• 제34권2호
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• pp.135-141
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• 2001

Arc-melted Ti-6Al-4V, Ti-4Fe and Ti-(1,2) Si alloys were oxidized at 700, 800, 900 and $1000^{\circ}C$ in air. The oxidation resistance of Ti-4Fe was comparable to that of Ti-6Al-4V, while the oxidation resistance of Ti-(1,2) Si was superior to that of Ti-6Al-4V. Ti-2Si displayed the best oxidation resistance among the four alloys, but failed after oxidation at $1000^{\circ}C$ for 17h. The oxide scale formed on Ti-6Al-4V, Ti-4Fe and Ti-(1,2)Si consisted of ($TiO_2$ and a small amount of $Al_2$$O_3$), ($TiO_2$ and a small amount of dissolved iron), and ($TiO_2$ plus a small concentration of amorphous $SiO_2$), respectively. The oxide grains of the surface scale of the four alloys were generally fine and round.

• 한국진공학회지
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• 제7권3호
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• pp.195-200
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• 1998

본 연구에서는 강유전체 박막의 게이트 산화물로 사용한 $Pt/SrBi_2Ta_2O_9(SBT)/CeO_2/Si(MFS)$와 Pt/SBT/Si(MFS) 구조의 결정 구조 및 전기적 성질 의 차이를 연구하였다. XRD 및 SEM 측정 결과 SBT/$CeO_2$/Si박막은 약5nm정도의 $SiO_2$층 이 형성되었고 비교적 평탄한 계면의 미세구조를 가지는 반면, SBT/Si는 각각 약6nm와 7nm정도의 $SiO_2$층과 비정질 중간상층이 형성되었음을 알 수 있다. 즉 CeO2 박막을 완충층 으로 사용함으로써 SBT박막과 Si기판의 상호 반응을 적절히 억제할 수 있음을 확인하였다. Pt/SBT/$CeO_2/Pt/SiO_2$/와 Pt/SBT/Pt/$SiO_2$/Si구조에서 Polarization-Electric field(P-E) 특 성을 비교해 본 결과 CeO2박막의 첨가에 따라 잔류분극값은 감소하였고 항전계값은 증가하 였다. MFIS구조에서 memory window값은 항전계값과 직접적 관련이 있으므로 이러한 항 전계값의 증가는 MFIS구조에서의 memory window값이 증가할 수 있음을 나타낸다. Pt-SBT(140nm)/$CeO_2$(25nm)/Si구조에서 Capacitance-Voltage(C-V) 측정 결과로부터 동작 전압 4-6V에서 memory wondows가 1-2V정도로 나타났다. SBT박막의 두께가 증가할수록 memory window값은 증가하였는데 memory wondows가 1-2V정도로 나타났다. SBT박막의 두께가 증가할수록 memory window값은 증가하였는데 이는 SBT박막에 걸리는 전압강하가 증가하기 때문인 것으로 생각되어진다. Pt/SBT/$CeO_2$/Si의 누설전류는 10-8A/cm2정도였고 Pt/SBT/Si 구조에서는 약10-6A/cm2정도로 약간 높은 값을 나타내었다.

• 한국세라믹학회지
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• 제27권3호
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• pp.412-422
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• 1990

Porous SiC ceramics were proposed to be promising materials for high-temperature thermoelectric energy conversion. Throughthe thermoelectric property measurements and microstructure observations on the porous alpha SiC and the mixture of $\alpha$-and $\beta$-SiC, it was experimentally clarified that elimination of stacking faults and twin boundaries by grain growth is effective to increase the seebeck coefficient and increasing content of $\alpha$-SiC gives rise to lower electrical conductivity. Furthermore, the effects of additives on the thermoelectric properties of 6H-SiC ceramics were also studied. The electrical conductivity and the seebeck coefficient were measured at 35$0^{\circ}C$ to 105$0^{\circ}C$ in argon atmospehre. The thermoelectric conversion efficiency of $\alpha$-SiC ceramics was lower than that of $\beta$-SiC ceramics. The phase homogeneity would be needed to improve the seebeck coefficient and electrical conductivity decreased with increasing the content of $\alpha$-phase. In the case of B addition, XRD analysis showed that the phase transformation did not occur during sintering. On the other hand, AlN addiiton enhanced the reverse phase transformation from 6H-SiC to 4H-SiC, and this phenomenon had a great effect upon the electrical conductivity.

• 한국표면공학회지
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• 제37권6호
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• pp.319-325
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• 2004

Fe thin films containing Si particles were prepared on metallic substrates by electrodeposition method in sulfate solutions and the content of codeposited Si particles in the films was investigated as a function of applied current density, the content of Si particels in the solution, solution pH, solution temperature and concentration of $FeSO_4$$7H_2$O in the solution. The amount of Si codeposited in the film was not dependent on the applied current density, solution pH and solution temperature, while it was dependent on the content of Si particles in the solution and the concentration of $FeSO_4$$7H_2$O in the solution. The amount of Si codeposited in the film increased with increasing content of Si particles in the solution but reached a maximum value of about 6 wt% when the content of Si particles in the solution exceeds 100 g/l. On the other hand, the content of Si codeposited in the film increased up to about 17 wt% with decreasing concentration of $FeSO_4$$7H_2$O in the solution. These results would be applied to the fabrication of very thin Fe-6.5 wt% Si sheets for electrical applications.