Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemi-cal vapor deposition
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장성주
(동신대학교 대학원 물리학과)
박주훈 (동신대학교 대학원 물리학과) |
1 |
Relative Raman intensities of the folded modes in SiC poytypes
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DOI |
2 |
A study for the CVD growth of 3C-SiC on SOI (Silicon on Insulator) substrates
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3 |
Chemical-vapor-deposition growth and characterization of epitaxial 3C-SiC films on SOI substrates with thin silicon top layers
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DOI ScienceOn |
4 |
Uniform SiC thin-film growth on Si by low pressure rapid thermal chemical vapor deposition
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DOI |
5 |
A study for the heteroepitaxial growth of SiC/Si by thermal CVD
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6 |
Growth characteristics of single-crystalline 6H-SiC homoepitaxial layers grown by a thermal CVD
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과학기술학회마을 |
7 |
Growth characteristics of 4H-SiC homoepitaxial Iayers grown by thermal CVD
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과학기술학회마을 |
8 |
Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates
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DOI |
9 |
Planar, ion implanted, high voltage 6H-SiC P-N junction diodes
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DOI ScienceOn |
10 |
Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source Precursors
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DOI ScienceOn |
11 |
Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers
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DOI |
12 |
Epitaxial growth of 3C-SiC on Si(111) from hexamethyldisilane
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DOI ScienceOn |
13 |
Site effect on the impurity levels in 4H, 6H. and 15R SiC
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DOI |
14 |
Prospects for device implementation of wide bandgap semiconductors
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DOI |
15 |
Initial stage for heteroepitaxy of 3C-SiC on the Si(001) surface in dimethylgermane source molecular beam epitaxy
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DOI ScienceOn |
16 |
Epitaxial growth of 3C-SiC films on 4 in diam (100) silican wafers by atmospheric pressure chemical vapor deposition
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DOI ScienceOn |
17 |
Silicon carbide turns on its power
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DOI |
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