Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemi-cal vapor deposition

화학기상증착법에 의한 6H-SiC 기판상의 3C-SiC 이종박막 성장

  • 장성주 (동신대학교 대학원 물리학과) ;
  • 박주훈 (동신대학교 대학원 물리학과)
  • Published : 2003.12.01
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Abstract

The heteroepitaxial growth of crystalline 3C-SiC on 6H-SiC substrates using high purity silane ($SiH_4$) and prophane ($C_3H^8$) was carried out by thermal chemical vapor deposition, and growth characteristics were investigated in this study. In case that the flow ratio of C/Si and flow rate of $H_2$ were 4.0 and 5.0 slm, respectively, the growth rate of epilayers was about 1.8 $\mu$m/h at growth temperature of $1200^{\circ}C$. The Nomarski surface morphology, X-ray diffraction, Raman spectroscopy, and photoluninescence of grown epilayers were measured to investigate the crystallinity. In this study, the high quality of crystalline 3C-SiC heteropitaxial layers was observed at growth temperature of above $1150^{\circ}C$.

본 연구에서는 열화학기상증착법을 사용하여 6H-SiC 기판 위에 silane($SiH_4$)과 prophane($C_3H_8$)을 사용하여 3C-SiC 이종박막을 성장시키고 이의 성장 특성을 조사하였다. C/Si 유량 비율이 4.0, 운반기체의 유량은 5 slm이고 성장온도가 $1200^{\circ}C$인 경우의 박막성장율은 약 1.8 $\mu$m/h이었다. 성장박막의 Nomarski 표면형상, X-선 회절분광, Raman 산란 특성 및 광발광(PL) 특성 등을 측정하고 성장조건에 따른 결정성을 비교하였다. 이러한 평가를 통하여 성장온도 $1150^{\circ}C$ 이상에서 양질의 결정성 3C-SiC 이종박막이 성장점을 확인하였다.

Keywords

References

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