• 제목/요약/키워드: SI reaction

검색결과 2,028건 처리시간 0.029초

Fabrication of β-SiAlONs by a Reaction-Bonding Process Followed by Post-Sintering

  • Park, Young-Jo;Noh, Eun-Ah;Ko, Jae-Woong;Kim, Hai-Doo
    • 한국세라믹학회지
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    • 제46권5호
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    • pp.452-455
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    • 2009
  • A cost-effective route to synthesize $\beta$-SiAlONs from Si mixtures by reaction bonding followed by post-sintering was investigated. Three different z values, 0.45, 0.92 and 1.87, in $Si_{6-z}Al_zO_zN_{8-z}$ without excess liquid phase were selected to elucidate the mechanism of SiAlON formation and densification. For RBSN (reaction-bonded silicon nitride) specimens prior to post-sintering, nitridation rates of more than 90% were achieved by multistep heating to $1400^{\circ}C$ in flowing 5%$H_2$/95%$N_2$; residual Si was not detected by XRD analysis. An increase in density was acquired with increasing z values in post-sintered specimens, and this tendency was explained by the presence of higher amounts of transient liquid phase at larger z values. Measured z values from the synthesized $\beta$-SiAlONs were similar to the values calculated for the starting compositions. Slight deviations in z values between measurements and calculations were rationalized by a reasonable application of the characteristics of the nitriding and post-sintering processes.

수중충격파를 이용하여 충격고화와 반응합성으로 제조된 Ti5Si3 금속간 화합물의 표면코팅 층의 특성에 관한 연구 (Characteristics of the Surface Coating Layer of Ti5Si3 Intermetallic Compound Obtained by Shock Compaction and Reaction Synthesis Through Underwater Shock Compression)

  • 이상훈
    • 한국분말재료학회지
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    • 제15권2호
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    • pp.101-106
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    • 2008
  • The objective of the present study is to investigate the increase in the functional characteristics of a substrate by the formation of a thin coating layer. Thin coating layers of $Ti_5Si_3$ have high potential because $Ti_5Si_3$ exhibits high hardness. Shock induced reaction synthesis is an attractive fabrication technique to synthesize uniform coating layer by controlling the shock wave. Ti and Si powders to form $Ti_5Si_3$ using shock induced reaction synthesis, were mixed using high-energy ball mill into small scale. The positive effect of this technique is highly functional coating layer on the substrate due to ultra fine substructure, which improves the bonding strength. These materials are in great demand as heat resisting, structural and corrosion resistant materials. Thin $Ti_5Si_3$ coating layer was successfully recovered and showed high Vickers' hardness (Hv=1183). Characterization studies on microstructure revealed a fairly uniform distribution of powders with good interfacial integrity between the powders and the substrate.

Ethyl Silicate로부터 Silicon Nitride의 합성(II) : 실화반응에서 첨가제의 영향 (Synthesis of Silicon Nitride from Ethyl Silicate(II) : Effect of Additive on the Nitridation of Silicon Nitride)

  • 오일환;박금철
    • 한국세라믹학회지
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    • 제25권5호
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    • pp.561-569
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    • 1988
  • Mixtures of very small amounts of additive, carbon and silica(about 0.46${\mu}{\textrm}{m}$) which synthesized by the hydrolysis of ethyl silicate, the molar ratio of SiO2/C was fixed to 1/10, was nitrided at 145$0^{\circ}C$. It was considered that the optimum amount of additive to promote the nitridation reaction was below 2.0wt%. By the addition of additive, the nitridation reaction was promoted and formation of $\beta$-Si3N4 was promoted at 145$0^{\circ}C$ for 1hour, but, the nitridation reaction was decreased and the ratio of $\alpha$/$\beta$ of Si3N4, was increased at 145$0^{\circ}C$ for 5 hours. The crystal phase was $\alpha$ phase and the nitridation reaction was promoted and the particle size of silicon nitride was become smaller by the addition of $\alpha$-Si3N4, but silicon nitride of whisker-like form was produced by the addition of transition elements. There was a difference in the lattice constants of $\alpha$-Si3N4, but no difference in its of $\beta$-Si3N4 according to kinds of added substance and reaction time.

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반응소결 물라이트를 위한 \$alpha-Al_2O_3/SiO_2$ 복합분말의 합성 및 그 특성 (Synthesis of \$alpha-Al_2O_3/SiO_2$ Composite Powders for Reaction-Sintered Mullite and its Properties)

  • 김희수;이종국;김환
    • 한국세라믹학회지
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    • 제32권8호
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    • pp.909-914
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    • 1995
  • From alumina powder and TEOS, $\alpha$-Al2O3/SiO2 composite powder for reaction-sintered mullite was synthesized by heterogeneous coagulation and surface coating, and investigated the mullitization reaction and sintering behavor of these powders. In $\alpha$-Al2O3/SiO2 composite powder prepared by heterogeneous coagulation, each alumina particles were surrounded by silica particles of 50~60 nm in size. And the alumina particles in composite powder prepared by surface coating were coated by uniform silica layer with thickness of 50 nm. In both methods, mullitization reaction was completed at 1$650^{\circ}C$ for 3h, and specimen sintered above 145$0^{\circ}C$ was about 95% fo the theoretical relative density. Mullite grains formed from the reaction with composite powders showed spherical shape with a size of 1~2${\mu}{\textrm}{m}$.

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인산염계 $SiO_2$ 주형재와 치과주조용 Ti-Zr-(Cu)계 합금의 계면반응 (Surface Reaction between Phosphate bonded $SiO_2$ Investment and Ti-Zr-(Cu) based Alloys for Dental castings)

  • 주규지
    • 대한치과기공학회지
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    • 제27권1호
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    • pp.57-63
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    • 2005
  • Experimental Ti-13%Zr and Ti-13%Zr-5%Cu alloys were made in an argon-arc melting furnace. The grade 2 CP Ti was used to control. To investigate the surface reaction layers produced by the reaction with mold materials and the influence of the reaction layers on the hardness of castings, A phosphate bonded $SiO_2$ base investment was used as mold material, and microstructure observation and hardness test were performed. The surface reaction layers of Ti-13%Zr and Ti-13%Zr-5%Cu alloys were thinner than that of CP Ti had a clearly multiple structure. A difference of the hardness between surface and inner of the Ti-13%Zr and Ti-13%Zr-5%Cu alloys became less than that of CP Ti. From the results, it was found that the Ti-Zr-(Cu) based alloys were possible to cast with $SiO_2$ base investment without the great changes of mechanical properties of the castings.

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Co/내열금속/(100) Si 이중층 구조의 실리사이드화 (Silicidation of Co/M/(100) Si bilayer Structures)

  • 권영재;이종무;배대록;강호규
    • 한국세라믹학회지
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    • 제35권5호
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    • pp.505-511
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    • 1998
  • 단결정 Si 기판 위에 증착한 Co/Hf과 Co/Nb 이중층으로부터 형성된 Co 실리사이드의 성장기구에 대하여 조사하였다. 두 경우 모두 500$^{\circ}C$ 이상에서 CoSi2가 주로 형성되었으나 그 결정방위의 성장양상은 서로 달랐다. Co/Hf/(100)Si 구조에서는 Si 기판과 에피텍셜 관계를 갖는 결정립과 그렇지 않은 결정립이 서로 혼합되어 성장하였다. 그러나 Co/Nb/(100)Si에서는 처음부터 에피텍셜 관계를 갖지 않는 결정립들만이 형성되었다. 동일한 구조임에도 불구하고 이렇게 내열금속 중간층에 따라 성장된 실리사이드의 결정방위가 달라지는 것으 안정한 반응제어층의 형성 및 고온에서의 그 분해과정과 관련이 있었다. 여러 구성원소들로 이루어진 반응제어층이 고온까지 안정할 경우에는 Co의 확산이동을 균일하게 제어하여 실리사이드의 에피텍셜 성장이 가능하다.

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Pd-SiC 쇼트키 다이오드를 이용한 $CH_4$ 가스센서 ($CH_4$ Gas Sensor Utilizing Pd-SiC Schottky Diode)

  • 김창교;이주헌;이영환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.163-166
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    • 1998
  • The mechanism of methane sensing by Pd-SiC diode was investigated over the temperature range of 400~$600^{\circ}C$. The effects or methane gas reaction on the parameters such as barrier height, initial rate of methane gas reaction are investigated. The methane gas reaction kinetics on the device are also discussed. The physical and chemical mechanism responsible for methane detection are proposed. Analysis of steady-state reaction kinetics using I-V method confirmed that methane gas reaction processes are responsible for the barrier height change in the diode.

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Reduction Behavior of Self-Reducing Pellets of Chromite and Si Sludge with and without Carbon

  • Jung, Woo-Gwang;Hossain, Sakib Tanvir;Kim, Jong-Ho;Chang, Young-Chul
    • 한국재료학회지
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    • 제29권10호
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    • pp.592-602
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    • 2019
  • Feasibility is investigated for reduction of chromium ore by Si sludge with mixed silicothermic and carbothermic reaction. The reduction behavior of chromium ore using Si sludge is investigated precisely to determine the effects of carbon addition, reaction time, and reaction temperature. The pellets are dropped into the furnace after temperature stabilized. As the amount of C addition increases, the amounts of CO and $CO_2$ gas generation increase. After the dropping of the pellets, the pellets are heated and the reaction starts at about 1,573 K or higher. The pellets maintain their shape until 10 min after the drop, and then melted. As the holding time increased, the size of the reduced metal particles increased. The chromium ore is rapidly reduced by the Si sludge, and the slag penetrated into the chromium ore and reduction progressed inside. As the reduction temperature increased, the reaction initiation time is shortened and the reaction fraction of the reduction reaction increased. As the reaction temperature increased, agglomeration of reduced ferrochrome metal is promoted.

Y2O3 첨가 탄소 프리폼에 Si 용융 침투에 의해 제조한 반응 소결 탄화규소 (RBSC Prepared by Si Melt Infiltration into the Y2O3 Added Carbon Preform)

  • 장민호;조경식
    • 한국분말재료학회지
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    • 제28권1호
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    • pp.51-58
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    • 2021
  • The conversion of carbon preforms to dense SiC by liquid infiltration is a prospectively low-cost and reliable method of forming SiC-Si composites with complex shapes and high densities. Si powder was coated on top of a 2.0wt.% Y2O3-added carbon preform, and reaction bonded silicon carbide (RBSC) was prepared by infiltrating molten Si at 1,450℃ for 1-8 h. Reactive sintering of the Y2O3-free carbon preform caused Si to be pushed to one side, thereby forming cracking defects. However, when prepared from the Y2O3-added carbon preform, a SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C → SiC reaction at 1,450℃, 3C and 6H SiC phases, crystalline Si, and Y2O3 were generated based on XRD analysis, without the appearance of graphite. The RBSC prepared from the Y2O3-added carbon preform was densified by increasing the density and decreasing the porosity as the holding time increased at 1,450℃. Dense RBSC, which was reaction sintered at 1,450℃ for 4 h from the 2.0wt.% Y2O3-added carbon preform, had an apparent porosity of 0.11% and a relative density of 96.8%.

Ti-Si 계면의 얇은 산화막이 TiN/TiS$i_2$ 이중구조막 형성에 미치는 영향 (Effects of the thin SiO$_{2}$ film at the Ti-Si interface on the formation of TiN/TiS$i_2$ bilayer)

  • 이철진;성만영;성영권
    • 대한전기학회논문지
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    • 제45권2호
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    • pp.242-248
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    • 1996
  • The properties of TiN/TiSi$_{2}$ bilayer formed by a rapid thermal annealing is investigated when thin SiO$_{2}$ film exists at the Ti-Si interface. The competitive reaction for the TiN/TiSi_2 bilayer occurs above 600 .deg. C. The thickness of the TiSi$_{2}$ layer decreases with increasing SiO$_{2}$ film thickness and also decreases with increasing anneal temperture When the competitive reaction for the TiN/TiSi$_{2}$ bilayer is occured by rapid thermal annealing, the composition of TiN layer represents TiN$_{x}$O$_{y}$ due to the SiO$_{2}$ layer at the Ti-Si interface but the structures of the TiN and TiSi$_{2}$ layers were not changed.d.d.

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