• 센서학회지
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• 제15권2호
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• pp.148-152
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• 2006

This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work, polysilazane liquide as a precursor was deposited on Si wafers by spin coating, microstructured and solidificated by UV lithography, and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules, hardness and tensile strength of the SiC microstructure implemented under optimum process condtions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated mulitlayer or 3D microstructures as well as its good mechanical properties.

• 한국기계가공학회지
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• 제16권5호
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• pp.40-46
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• 2017

A plasma gas control apparatus for semiconductor plasma etching processes securely holds a cathode for forming a plasma, confines the plasma during the plasma etching process, and discharges gas after etching. It is a key part of the etching process. With the advancement of semiconductor technology, there is increasing interest in parts for semiconductor manufacturing that directly affect wafers. Accordingly, in order to replace the plasma gas control device with a CVD-SiC material superior in mechanical properties to existing SiCs (Sintered-SiC, RB-SiC), a study on the grinding characteristics of CVD-SiC was carried out. It is confirmed that the optimal grinding condition was obtained when the result table feed rate was 2 m/min and the infeed depth was $5{\mu}m$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.392-393
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• 2006

This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work. polysilazane liquide as a precursor was deposited on Si wafers by spin coating. microstructured and solidificated by UV lithography. and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules. hardness and tensile strength of the SiC microstructure implemented under optimum process conditions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated multlayer or 3D microstructures as well as its good mechanical properties.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2000년도 춘계학술발표대회 논문집
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• pp.190-194
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• 2000

The fabrication process and thermal properties of 50∼76vo1% SiCp/Al metal matrix composites (MMCs) were investigated. The 50∼76vo1% SiCp/Al MMCs fabricated by pressure infiltration casting process showed that thermal conductivities were 85∼170W/mK and coefficient of thermal expansion (CTE) were ranged 10∼6ppm/K. Specially, the thermal conductivity and CTE of 71vo1%SiCp/Al MMCs were ranged l15∼156W/mK and 6∼7ppm/K, respectively, which showed a improved thermal properties than the conventional electronic packaging materials such as ceramics and metals.

• 한국분말재료학회지
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• 제3권4호
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• pp.260-265
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• 1996

Investigation on the extrusion of rapidly solidified Al-Si alloys was performed in order to develop an inexpensive production process of high strength parts. It is necessary to establish optimum process variables for the extruding condition through the experiments, because it is high cost and time consuming process. In this paper, the experimental results was compared to the finite element analysis for the extrusion of rapidly solidified Al-Si alloys. The results of this simulation helped to understand the distribution of relative density and effective stress for rapidly solidified Al-Si alloys during the extrusion process. This information is expected to assist in improving the extrusion operations of rapidly solidified Al-Si alloys.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.54-56
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• 2001

The $SiH_4$ soak step is widely used during the CVD Tungsten(W) plug deposition process on the Ti/TiN barrier metal to prevent the $WF_6$ attack to the underlayer metal. We tried to reduce or skip the time of $SiH_4$ soak process to optimize W-plug deposition process on Via. The electrical characteristics including Via resistance and the structure of W film are affected according to $SiH_4$ soak time. The elimination possibility of $SiH_4$ soak process was confirmed in the case of that the CVD W film grows on the stable Ti/TiN underlayer.

• 한국결정성장학회지
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• 제14권2호
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• pp.47-49
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• 2004

Gate protection $SiN_x$ as an alternative to a conventional re-oxidation process in Dynamic Random Access Memory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but also save the thermal budget due to the re-oxidation. The protection $SiN_x$ process is applied to the poly-Si gate, and its device performance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectric integrity show that etch damage-curing capability of protection $SiN_x$ is comparable to the re-oxidation process. In addition, the hot carrier immunity of the $SiN_x$ deposited gate is superior to that of re-oxidation processed gate.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 추계학술대회논문집
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• pp.329-332
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• 2004

Cast-forging process has a lot of advantages in terms of saving materials along with enhancement of mechanical properties. Therefore, this process has been taken as one of candidate process to manufacturing automotive suspension parts. Since most of cast-forging parts are made with using Al-Si alloys of high castability, the mechanical properties largely depends on the primary ${\alpha}$ and eutectic Si particles. During hot forging step these microstructural features evolve with strain increment. In the present study, the mechanical property evolution was investigated in terms of microstructual evolution with strain. Specially, fracture behavior of A356 alloy was studied to find out how to improve the mechanical properties.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.153-154
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• 2000

Large size poly-Si TFT-LCDs have been fabricated using p-channel thin film transistors for notebook PC application. We have designed and implemented the data sampling circuit and gate drivers that operate with low power consumption and high reliability. The gate driver has a redundant structure. We have realized the uniform and excellent display quality comparable to that of CMOS module. The reliability of panel is investigated and discussed by measuring the bias stability of transistors.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2000년도 추계학술발표대회 논문집
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• pp.58-62
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• 2000

The fabrication process and analysis of thermal properties of 50~76vo1% SiCp/Al metal matrix composites(MMCs) for heatsink materials in electronic packaging were investigated. The 50~76vo1% SiCp/Al MMCs fabricated by pressure infiltration casting process showed that thermal conductivities were 85~170W/mK and coefficient of thermal expansion(CTE) were ranged 10~6ppm1k. Specially, the thermal conductivity and CTE of 71vo1%SiCp/Al MMCs were ranged 115~156W/mK and 6~7ppm/K. respectively, which showed a improved thermal properties than the conventional electronic packaging materials such as ceramics and metals.