• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.910-917
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• 2009

We have designed a new structures of Junction Field Effect Transistor(JFET) using SILVACO simulation to improve electrical properties and process reliability. The device structure and process conditions of Si control JFET(Si JFET) were determined to set cut off voltage and drain current(at Vg=0 V) to -0.46 V and $300\;{\mu}A$, respectively. Among many design parameters influencing the performance of the device, the drive-in time of p-type gate is presented most predominant effects. Therefore we newly designed SiGe JFET, in which SiGe layers were placed above and underneath of Si-channel. The presence of SiGe layer could lessen Boron into the n-type Si channel, so that it would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer could be explained in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.273-279
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• 2006

This study explored the possibility of porous Si (PS) formed by indirect electrode anodization used for effective isolation material for radio frequency integrated circuits (RFIC). We investigated the effect of current density and reaction time on the porosity size and depth, and X-ray diffraction of bulk Si and porous Si to evaluate the change in lattice parameter. Porosity size and depth usually increases with an increase in the current density and reaction time. PS increases the lattice parameter of Si compared to the bulk Si which causes the compressive stress of around 8 MPa. PS formed by the method is believed to be suitable for isolation material for RFIC because it is simple process as well as good compatibility to Si VLSI process.

• Journal of Information Technology Services
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• v.10 no.2
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• pp.141-162
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• 2011

The controls of Information Systems (IS) have been an more critical issue controls as the sophistication and integration of IS is more proceeded. ITGI (The Information Technology Governance Institute) of ISACA (Information Systems Audit and Control Association) has suggested COBIT (Control Objectives for Information and related Technology) and this has been widely recognized the evaluation model of IS controls. In COBIT, IS was evaluated in terms of process, information quality, and IT resources. This study used COBIT in order to suggest and empirically test an evaluation model of IS service. The data was collated from one major Chinese SI (Systems Integration) company in four domains of processes : planning and organization, acquisition and implementation, delivery and support, and monitoring. Seven factors are extracted using an exploratory factor analysis as follows : Overall IT planning process, technological assessment process in IT planning of IT, cost-benefit assessment process in IT planning, implementation process, support process, monitoring process, post-implementation evaluation process. The results of confirmatory analysis of three alternative measurement models indicated that the measurement model with one inherent or conceptual variable has greater model fitness than the other models. This study suggests the logical and general way to test and apply COBIT in evaluating IS services.

• Journal of Korea Foundry Society
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• v.15 no.4
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• pp.368-376
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• 1995

An Al-composite material was fabricated with using the rheocompocasting process and the microstructure of the Al-Cu/SiCp composite material was investigated depending on the stirring times and the amount of Ti additions. The distribution of SiC dispersion shows the good result at the stirring time of 30 min. The degree of microdistribution of the $Al_2Cu$ and SiCp is improved when the amount of Ti addition is increased. At the compositon of 0.3%Ti, the primary solid is the compound of $Al_3Ti$ and no exist of the SiCp and $Al_2Cu$ phase around the primary $Al_3Ti$. In the process of compositization, SiCp is found at the primary and final solid parts and is found at the final solid part after remelting. $Al_2Cu$ and SiCp are distributed around and outside of dendrite or independently after remelting, which is different from the process of compositization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.144-150
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• 2013

A New Ag-pastes were developed for integrating the high efficiency mono-Si solar cell. The pastes were the mixture of 84 wt% Ag, 2 wt% glass frit, 11 wt% solvent of buthyl cabitol acetate, and 3 wt% additives. After fabricating the Ag-pastes by using a 3-roll mill, they were coated on a $SiN_x$/n+/p- stacks of a commercial mono-Si solar cell. And the post-thermal process was also optimized by varying the process conditions of peak temperature. The optimized solar cell efficiency on a 6-inch mono-Si wafer was 18.28%, which was the one of the world best performances. It meaned that the newly developed Ag-paste could be adopted to fabricate a commercial bulk Si solar cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.724-728
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• 2004

This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. In this work, CHF$_3$ gas was used to form the polymer as a function of a side-wall for excellent anisotropy etching during the RIE process. The ranges of the etch rate were obtained from 60 $\AA$/min to 980 $\AA$/min according to the conditions such as working gas pressure, RF power, distance between electrodes and the $O_2$ addition ratio in working gas pressure. Under the condition such as 100 mTorr of working gas pressure, 200 W of RF power and 30 mm of the distance between electrodes, mesa structures with about 40 of the etch angle were formed, and the vertical structures could be improved with 50 % of $O_2$ addition ratio in reactive gas during the RIE process. As a result of the investigation, we know that it is possible to apply the RIE process of 3C-SiC using CHF$_3$ for the development of electronic parts and MEMS applications in harsh environments.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.26-31
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• 2023

We investigated the impact of NF₃ / H₂O remote plasma dry cleaning conditions on the SiO₂ etching rate at different preparation states during the fabrication of ultra-large-scale integration (ULSI) devices. This included consideration of factors like Si crystal orientation prior to oxidation and three-dimensional structures. The dry cleaning process were carried out varying the parameters of pressure, NF₃ flow rate, and H₂O flow rate. We found that the pressure had an effective role in controlling anisotropic etching when a thin SiO₂ layer was situated between Si₃N₄ and Si layers in a multilayer trench structure. Based on these observations, we would like to provide further guidelines for implementing the dry cleaning process in the fabrication of semiconductor devices having 3D structures.

• Journal of the Korean Society of Safety
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• v.22 no.4
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• pp.32-36
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• 2007

When the vacuum system for the process of $SiH_{4}$ gas used in the semiconductor and FPD field is partially vented from vacuum to atmospheric state, a fire often occurs due to auto-ignition of $SiH_{4}$ gas. In order to prevent the fire, the concentration of $SiH_{4}$ should be kept under LFL. This means that the higher capacity pump is needed to meet the process conditions as well as the condition that the concentration of $SiH_{4}$ should be kept under LFL. In this article, we conducted the injection of the dilution gas at the manifold between booster pump and dry pump compared with the typical method that the dilution gas was injected into inlet port of booster pump using computer simulation. According to the result, we can flow further more purge gas for safety without any change of the condition in the process chamber, which means that the higher capacity pump is not required for safety in some cases.

• Korean Journal of Materials Research
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• v.14 no.8
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• pp.573-578
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• 2004

Newly developed silicide materials for ULSI should have the appropriate electrical property of low resistant as well as process compatibility in conventional CMOS process. We prepared $NiCoSi_x$ silicides from 15 nm-Co/15 nm-Ni/Si structure and performed contact dry etch process to confirm the dry etch stability and compatibility of $NiCoSi_x$ layers. We dry etched the photoresist/SiO/silicide/silicon patterns with $CF_4\;and\;CHF_3$ gases with varying powers from 100 to 200 W, and pressures from 45 to 65 mTorr, respectively. Polysilicon and silicon active layers without silicide were etched $0\sim316{\AA}$ during over etch time of 3min, while silicon layers with proposed $NiCoSi_x$ silicide were not etched and showed stable surfaces. Our result implies that new $NiCoSi_x$ silicides may replace the conventional silicides due to contact etch process compatibility.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.137-141
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• 2007

$La_{2}O_{3}-TiO_{2}-SiO_{2}$ glass, a type that could not obtained so far by the conventional melting method, was prepared successfully using a sol gel process. Glass derived with the sol-gel process has compositions of $5La_{2}O_{3}-5TiO_{2}-90SiO_{2},\;5La_{2}O_{3}-10TiO_{2}-85SiO_{2}$, and $5La_{2}O_{3}-20TiO_{2}75SiO_{2}$. The UV-visible absorption edge of all glass compositions was below 400 nm. The measured density is in the range of 2.55-2.89, and was nearly identical to the calculated density and the refractive index of the glasses derived from the sol-gel ranges from 1.545 to 1.645. The molar additive coefficient of $TiO_{2}$ measured in this ternary system is lower than the calculated value, while the value of $La_{2}O_{3}$ is higher.