• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.508-517
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• 2014

We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width ($W_{fin}$) and height ($H_{fin}$) of the fin as well as the channel doping concentration ($N_{ch}$). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제15권9호
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• pp.2000-2006
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• 2011

In this paper, the drain induced barrier lowering(DIBL) for doping distribution in the channel has been analyzed for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing because of adventages to be able to reduce the short channel effects(SCEs) to occur in convensional MOSFET. DIBL is SCE known as reduction of threshold voltage due to variation of energy band by high drain voltage. This DIBL has been analyzed for structural parameter and variation of channel doping profile for DGMOSFET. For this object, The analytical model of Poisson equation has been derived from Gaussian doping distribution for DGMOSFET. To verify potential and DIBL models based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and DIBL for DGMOSFET has been investigated using this models.

• Journal of the Korean Applied Science and Technology
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• 제30권2호
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• pp.356-361
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• 2013

Lead (II) ion selective poly(aniline) solid contact electrode based on Tetramethylthiuram monosulfide ionophore as a sulfur containing sensing material is successfully developed. The electrode exhibits good linear response of 25.6 mV / decade (at $20{\pm}0.2^{\circ}C$, r2=0.995) within the concentration range of $1.0{\times}10^{-1}{\sim}4.0{\times}10^{-7}$ M Pb (II). The composition of this electrode was Ionophore : PVC : dioctylphthalate : potassiumtetrakis(4-chlorophenyl)borate : Oleic acid = 5.0 : 20.0 : 25.0 : 4.0 : 5.0. When we consider the results of using different composition electrodes based on only one potassiumtetrakis(4-chlorophenyl)borate or Oleic acid liphophlic additive, poly(aniline) solid contact electrode based on Tetramethylthiuram monosulfide ionophore with potassiumtetrakis(4-chlorophenyl)borate and Oleic acid liphophlic additive had the best result in response characteristics. The electrode shows good selectivity for lead (II) ion in comparison with alkali, alkaline earth, transition and heavy metal ions. This electrode is suitable for use with aqueous solutions of pH 3.0 ~ 7.0 and their standard deviation in the measured emf differences was ${\pm}2.94$ mV at Tris buffered lead sample solution of $1.0{\times}10^{-2}$ M and ${\pm}2.82$ mV at Tris buffered lead sample solution of $1.0{\times}10^{-3}$ M. Their stabilization time was less than 710 s. and response time was less than 16 s.

• YAKHAK HOEJI
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• 제42권4호
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• pp.414-421
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• 1998

In order to compare the suppressive effect of quercetin and its glycosides, such as quercitrin (quercetin-3-rhamnoside), isoquercitrin (quercetin-3-glucoside), hyperin (querceti n-3-galactoside)and rutin (quercetin-3-rhamnosyl glucoside), on the genotocicity by benzo(a)pyrene(B(a)P), in vitro sister chromatid exchange(SCE) test using mouse spleen lymphocytes and in vivo micronucleus test using mouse peripheral blood were performed. B(a)P-induced SCEs in vitro were slightly decreased by the simultaneous treatment of quercetin and its glycosides, although there was no significant decrease. On the other hand, MNU induced micronucleated reticulocytes(MNRL7s) in vivo were significantly decreased with a dose-dependent manner in all compounds tested. However, there were no differences between quercetin aglycone and glycosides in the suppressive effects under experimental condition of this study. To elucidate, the action mechanism of quercetin aglycone and its glycosides against B(a)P-induced genotoxicity, the assay of DNA binding with B(a)P was studied. Quercetin aglycone and its glycosides inhibited B(a)P metabolism in the presence of S-9 mix and decreased the B(a)P/DNA binding in the calf thymus DNA with S-9 mix. These results suggest that antigenotoxicity of quercetin antiglycosides on B(a)P-induced genotoxicity is due to decrease of DNA binding with B(a)P through the inhibition of metabolism with B(a)P in the calf thymus DNA. Therefore, quercetin and its glycosides may act as an antigenotoxicity agent and may be useful as a chemopreventive agent of polycyclic aromaic hydrocarbons like B(a)P.

• Journal of Electrical Engineering and Technology
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• 제5권2호
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• pp.228-238
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• 2010

There is an increasing interest in research to help overcome the energy crisis that has been focused on energy storage applications in various parts of power systems. Energy storage systems are good at enhancing the reliability or improving the efficiency of a power system by creating a time gap between the generation and the consumption of power. As a contribution to the various applications of storage devices, this paper describes a novel algorithm that determines the power and storage capacity of selected energy storage devices in order to improve upon railroad system efficiency. The algorithm is also demonstrated by means of simulation studies for the Korean railroad lines now in service. A part of this novel algorithm includes the DC railroad powerflow algorithm that considers the mobility of railroad vehicles, which is necessary because the electric railroad system has a distinct distribution system where the location and power of vehicles are not fixed values. In order to derive a more accurate powerflow result, this algorithm has been designed to consider the rail voltage as well as the feeder voltage for calculating the vehicle voltage. By applying the resultant control scheme, the charging or discharging within a specific voltage boundary, energy savings and a substation voltage stabilization using storage devices are achieved at the same time.

• Journal of Preventive Medicine and Public Health
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• 제28권2호
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• pp.511-525
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• 1995

To elucidate some DNA adducts as a biological marker for workers of chromate pigment, the effects of chromium exposure on the formation of 8-hydroxydeoxyguanosine(8-OH-dG) and sister chromatid exchanges(SCEs) frequency in 38 workers of a pigment plant in Bucheon which utilized lead chromates, were examined. The chromium contents of venous blood and urine were measured as working environmental exposure level. The concentrations of 8-OH-dG in DNA isolated from lymphocytes were determined with high performance liquid chromatography and electrochemical detector and denoted as a molar ratio of 8-OH-dG to deoxyguanosine(dG). The SCEs frequency were analyzed in DNA isolated from lymphocytes. A significant correlation was found between creatinine adjusted urine chromium concentration and the molar ratio of 8-OH-dG to dG(r=0.47, p<0.01). After adjusting the current smoking habit, the correlation coefficient was increased(r=0.62, p<0.05). However, there was no significant correlation between the SCE frequency and chromium exposure. This significant results between molar ratio of 8-OH-dG to dG and chromium exposure are in good agreement with in vitro studies that support the importance of DNA adduct formation for the carcinogenic effect of chromium.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권1호
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제10권3호
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• pp.479-485
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• 2006

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin undoped Si channel for SCEs control, ale being validated for sub-20nm scaling. A novel analytical transport model for the subthreshold mode of DGMOSFETs is proposed in this paper. The model enables analysis of short channel effect such as the subthreshold swing(SS), the threshold voltage roil-off$({\Delta}V_{th})$ and the drain induced barrier lowering(DIBL). The proposed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. An approximative solution of the 2D Poisson equation is used for the distribution of electric potential, and Wentzel-Kramers-Brillouin approximation is used for the tunneling probability. The new model is used to investigate the subthreshold characteristics of a double gate MOSFET having the gate length in the nanometer range $(5-20{\sim}nm)$ with ultra thin gate oxide and channel thickness. The model is verified by comparing the subthreshold swing and the threshold voltage roll-off with 2D numerical simulations. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.