• Journal of Preventive Medicine and Public Health
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• v.22 no.1 s.25
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• pp.116-124
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• 1989

To assay the cytogenetic toxicity of $NiCl_2,\;K_2Cr_2O_7CdCl_2,\;and\;HgCl_2$, the frequencies of sister chromatid exchanges(SCEs) and chromosomal aberrations were observed in the metaphase chromosomes of the human lymphocytes which were cultured with above materials. The frequencies of SCEs are dose-dependently increased by all materials in this experiment. Chromosomal aberrations, especially gap and break, are increased by the nickel and chromic compounds, while not significantly increased by the cadmium and mercurial compounds. This results indicate the dose dependent relationship between the frequencies of SCEs and the concentrations of the heavy metals, but the increasing rates of the SCEs induced by the heavy metals are less sensitive than other mutagens or carcinogens which were confirmed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.10
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• pp.2305-2309
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• 2010

In this paper, the variations of threshold voltage characteristics for ratio of channel length and thickness have been alanyzed for DG(Double Gate)MOSFET having top gate and bottom gate. Since the DGMOSFET has two gates, it has advantages that contollability of gate for current is nearly twice and SCE(Short Channel Effects) shrinks in nano devices. The channel length and thickness in MOSFET determines device size and extensively influences on SCEs. The threshold voltage roll-off, one of the SCEs, is large with decreasing channel length. The threshold voltage roll-off and drain induced barrier lowing have been analyzed with various ratio of channel length and thickness for DGMOSFET in this study.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.845-847
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• 2012

In this paper, the transport characteristics for doping concentration in the channel has been analyzed for DGMOSFET. The Possion equation is used to analytical. The DGMOSFET is extensively been studying because of advantages to be able to reduce the short channel effects(SCEs) to occur in conventional MOSFET. Since SCEs have been occurred in subthreshold region including threshold region, the analysis of transport characteristics in subthreshold region is very important. The threshold voltage roll-off and DIBL have been with various of doping concentration for DGMOSFET in this study.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.765-767
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• 2010

In this paper, the variations of threshold voltage characteristics for ratio of channel length and thickness have been alanyzed for DG(Double Gate)MOSFET having top gate and bottom gate. Since the DGMOSFET has two gates, it has advantages that contollability of gate for current is nearly twice and SCE(Short Channel Effects) shrinks in nano devices. The channel length and thickness in MOSFET determines device size and extensively influences on SCEs. The threshold voltage roll-off, one of the SCEs, is large with decreasing channel length. The threshold voltage roll-off has been analyzed with various ratio of channel length and thickness for DGMOSFET in this study.

• Korean Journal of Food Science and Technology
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• v.31 no.3
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• pp.823-830
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• 1999

The suppressing effects of crude extracts of three Korean teas, persimmon leaf tea extract (PLTE), green tea extract (GTE) and oolong tea extract (OTE), were studied on the induction of sister chromatid exchange (SCE) in cultured Chinese hamster ovary cells. When cells were treated with tea extract after mitomycin C (MMC) treatment, the frequency of MMC-induced SCEs were decreased at the high concentration $(1000\;{\mu}g/mL)$ of PLTE in the presence of S9 mix and at low concentrations $(20{\sim}80\;{\mu}g/mL)$ of PLTE in the absence of S9 mix, Whereas GTE and OTE showed suppressing effects on the MMC-induced SCEs at low concentrations $(10{\sim}20\;{\mu}g/mL)$ for OTE and $160\;{\mu}g/mL$ for GTE only in the presence of S9 mix. MMC-induced SCEs were decreased by post-treatment with each tea extracts with S9 mix in the G1 phase of the cell cycle. These results suggest that PLTE, GTE and OTE could have bio antimutagenic activities, and also suggest that PLTE might have unknown antimutagenic components which would be responsible for the inhibitory effect against direct acting mutagenicity.

• Journal of Preventive Medicine and Public Health
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• v.19 no.2 s.20
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• pp.244-251
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• 1986

Sister chromatid exchanges(SCEs) and cell cycle kinetics were proposed as a sensitive and quantitative assay for mutagenicity and cytotoxicity in short-term cultures of phytohema-gglutinin(PHA)-stimu1ated human 1ymphocytes. Therefore, this study was performed to investigate the relation between the cytotoxic effects and sister chromatid exchanges. The resultes are summarized as follows: 1) The frequency of SCEs per cell are $13.1{\pm}2.8$ in the lower concentration of $6.25{\times}10^{-9}M\;and\;75.8{\pm}8.2$ in the highest concentration of $1.00{\pm}10^{-7}M$. Mitotic index is decreased in the higher concentration of mitomycin C. The result indicates that mitomycin C led to a dose dependent increase in SCE frequency, but decease in mitotic index. 2) Chromosomal analysis was performed on metaphase cells that have divided one, two, and three or more times for cell cycle kinetics by fluorescence-plus-Giemsa(FPG) technique. According to the increased concentration of mitomycin C, the proportion of metaphase cells in the first are profoundly increased but the cells of third division are greatly decreased. 3) The frequency of SCEs per chromosome by chromosomal group are decreased gradually from A group to G group. But relationships between specific chromosomal group and SCE frequency are not found.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.7
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• pp.1537-1542
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• 2011

In this paper, the subthreshold characteristics have been analyzed for various oxide thickness of double gate MOSFET(DGMOSFET) using Poisson's equation with nonuniform doping distribution. The DGMOSFET is extensively been studying since it can shrink the short channel effects(SCEs) in nano device. The degradation of subthreshold swing(SS) known as SCEs has been presented using analytical for, of Poisson's equation with nonuniform doping distribution for DGMOSFET. The SS have been analyzed for, change of gate oxide thickness to be the most important structural parameters of DGMOSFET. To verify this potential and transport models of thus analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing has been analyzed using this models for DGMOSFET.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.1-7
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• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.8
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• pp.1764-1770
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• 2011

In this paper, the subthreshold swings for doping distribution in the channel have been analyzed in double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studying since it can lessen the short channel effects(SCEs) as next -generation nano device. The degradation of subthreshold swing(SS) known as SCEs has greatly influenced on application of digital devices, and has been analyzed for structural parameter and variation of channel doping profile in DGMOSFET. The analytical model of Poisson equation has been derived from nonuniform doping distribution for DGMOSFET. To verify potential and subthreshold swing model based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing for DGMOSFET has been analyzed using these models.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.377-387
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• 2012

An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation.