• Journal of the Korean Wood Science and Technology
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• v.51 no.6
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• pp.470-480
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• 2023

This study aimed to develop a sound-absorbing composite using sugarcane bagasse (SB) and coffee silver skin (CS) as raw materials. The composite boards were manufactured by bonding the fibers with Melamine Urea-Formaldehyde adhesive, ensuring a consistent thickness of 30 mm. Various densities were employed, namely 380, 450, and 520 kg/m³. The samples were fabricated with different fiber ratios, including SB100%, SB75% with CS25%, and SB50% with CS50%. The sound absorption coefficient (SAC) and noise reduction coefficient (NRC) were measured using the impedance tube method within a frequency range of 63-6,300 Hz. The experimental results revealed that the mixing ratio of CS exerted a notable influence on enhancing the SAC, while the density of the composite board exhibited a significant impact on increasing both the SAC and NRC. Among the densities tested, the optimal value was observed at 520 kg/m³, yielding a SAC value of 0.65 at a frequency of 1,000 Hz and an NRC value of 0.55 for the SB50-CS50 composite plate. These findings underscore the importance of considering the CS mixing ratio and composite board density when aiming to optimize sound absorption properties.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1697-1701
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• 2016

The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of $Sb_2O_3$ concentration. Leakage conduction in the ohmic region increased with increasing $Sb_2O_3$ concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of $Sb_2O_3$. It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with $Sb_2O_3$ additive was attributed to the lowered capacitance in the grain boundary layer.

• Journal of the Korean Electrochemical Society
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• v.23 no.1
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• pp.18-23
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• 2020

Antimony telluride (Sb_xTe_y) thin films were synthesized by an electrodeposition method with a control of applied potential at room temperature. Characterization of electrical and thermoelectric properties such as conductivity, Seebeck coefficient, and power factor (P.F.) were conducted as a function of the chemical composition of the electrodeposited films. Morphology of thin films were dense and uniform and the composition was tailored from 25 to 60 at.% of the Sb content by altering the applied potential from -0.13 to -0.27 V (vs. SCE). The conductivity of the films were ranged from 2 × 10^-4 ~ 5 × 10^-1 S/cm indicating their amorphous behavior. The meaured Seebeck coefficient of films were relatively high compared to that of bulk single cyrstal Sb_xTe_y due to their low carrier concentration. The variation of the Seebeck coefficient of the films was also related to the change of chemical composition, showing the power factor of ~10 ㎼/mK².

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.529-532
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• 2006

Sn-filled $Co_8Sb_{24}$ skutterudites were synthesized by the encapsulated induction melting process. Single ${\delta}-phase$ was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conductivity of the Sn-filled $Co_8Sb_{24}$. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled $Co_8Sb_{24}$ skutterudite is a highly degenerate semiconductor. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be $z{\leq}0.5$ in the $Sn_zCo_8Sb_{24}$ system.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.192-195
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• 2011

The electro-deposition of compound semiconductors has been attracting more attention because of its ability to rapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a costeffective manner (1). In particular, low band-gap $A_2B_3$-type chalcogenides, such as $Sb_2Te_3$ and $Bi_2Te_3$, have been extensively studied because of their potential applications in thermoelectric power generator and cooler and phase change memory. Thermoelectric $Sb_xTe_y$ films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different ratios of $TeO_2$ to $Sb_2O_3$. The stoichiometric $Sb_xTe_y$ films were obtained at an applied voltage of -0.15V vs. SCE using a solution consisting of 2.4 mM $TeO_2$, 0.8 mM $Sb_2O_3$, 33 mM tartaric acid, and 1M $HNO_3$. The stoichiometric $Sb_xTe_y$ films had the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentration and mobility of $5.8{\times}10^{18}/cm^3$ and $54.8\;cm^2/V{\cdot}s$, respectively. More negative applied potential yielded more Sb content in the deposited $Sb_xTe_y$ films. In addition, the hole concentration and mobility decreased with more negative deposition potential and finally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited $Sb_2Te_3$ thin film deposited at -0.15V vs. SCE at room temperature was approximately 118 ${\mu}V/K$ at room temperature, which is similar to bulk counterparts.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1396-1400
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• 1994

Electrical properties in the ZnO-Bi2O3-CoO-Zn7Sb2O12 system were investigated with Zn7Sb2O12 content (0.1~2 mol%). The increase of the Zn7Sb2O12 content inhibited the grain growth of ZnO, which showed a narrow grain size distribution of ZnO. The breakdown voltage (Vb) increased markedly with 1 mol% Zn7Sb2O12 addition due to the grain growth control behaviour of the Zn7Sb2O12 . The nonlinear I-V characteristic was significantly influenced by the Zn7Sb2O12 content (or Bi2O3/Zn7Sb2O12 ratio). Addition of 0.5 mol% Zn7Sb2O12 showed the highest nonlinear coefficient ($\alpha$) of 43. The leakage current in prebreakdown region was decreased with increasing Zn7Sb2O12 content.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.353-359
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• 2000

$(Bi_{0.15}Sb_{0.85})_2Te_3$ and $(Bi_{1-x}Sb_x)_2Te_3$ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the $Sb_2Te_3$ content. The $(Bi_{0.15}Sb_{0.85})_2Te_3$ film, deposited by DC sputtering at $300^{\circ}C$ with rotating the Corning glass substrate at 10 rpm, was fully crystallized to $(Bi,Sb)_2Te_3$ phase with c-axis preferred orientation. This $(Bi_{0.15}Sb_{0.85})_2Te_3$ film exhibited the Seebeck coefficient of 185 $\mu$V/K which was higher than the values of other $(Bi_{0.15}Sb_{0.85})_2Te_3$ films fabricated with different sputtering conditions. With increasing the $Sb_2Te_3$ content, the Seebeck coefficient and electrical resistivity of p-type $(Bi_{1-x}Sb_x)_2Te_3$ (0.77$\leq$x$\leq$1.0) film were lowered. Among p-type $(Bi_{1-x}Sb_x)_2Te_3$ films, a maximum power factor of $0.79{\times}10^{-3}W/K^2-m$ was obtained at (Bi_{0.05}Sb_{0.95})_2Te_3$ composition..

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.312-317
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• 2006

Binary skutterudite $CoSb_3$ compounds were prepared by the encapsulated induction melting (EIM) process, and their thermoelectric, microstructural and mechanical properties were examined. Single-phase ${\delta}-CoSb_3$ was successfully produced by the EIM and subsequent heat treatment at 773 K-873 K for 24 hours in vacuum. Seebeck coefficient increased with increasing heat treatment temperature up to 673 K, showing the positive signs in the range of measuring temperature. However, the samples heat-treated at 773 K-873 K showed negative Seebeck coefficient from room temperature to 400 K, while it showed positive signs above 400 K. Electrical resistivity decreased with increasing temperature, showing typical semiconducting conductivity. Thermal conductivity decreased drastically with increasing heat-treatment temperature. This is closely related with the phase transition to ${\delta}-CoSb_3$.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.542-545
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• 2011

Half-Heusler alloys are a potential thermoelectric material for use in high-temperature applications. In an attempt to produce half-Heusler thermoelectric materials with fine microstructures, TiCoSb was synthesized by the mechanical alloying of stoichiometric elemental powder compositions and then consolidated by vacuum hot pressing. The phase transformations during the mechanical alloying and hot consolidation process were investigated using XRD and SEM. A single-phase, half- Heusler allow was successfully produced by the mechanical alloying process, but a minor portion of the second phase of the CoSb formation was observed after the vacuum hot pressing. The thermoelectric properties as a function of the temperature were evaluated for the hot-pressed specimens. The Seebeck coefficients in the test range showed negative values, representing n-type conductivity, and the absolute value was found to be relatively low due to the existence of the second phase. It is shown that the electrical conductivity is relatively high and that the thermal conductivities are compatibly low in MA TiCoSb. The maximum ZT value was found to be relatively low in the test temperature range, possibly due to the lower Seebeck coefficient. The Hall mobility value appeared to be quite low, leading to the lower value of Seebeck coefficient. Thus, it is likely that the single phase produced by mechanical alloying process will show much higher ZT values after an excess Ti addition. It is also believed that further property enhancement can be obtained if appropriate dopants are selectively introduced into this MA TiCoSb System.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.41-45
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• 2004

P-type $Bi_{0.5}$$Sb_{1.5}$ $Te_3$ thin films were deposited by the flash evaporation technique, and their thermoelectric properties and electronic transport parameters were investigated. The effective mean free path model was adopted to examine the thickness effect on the thermoelectric properties. Annealing effects on the carrier concentration and mobility were also studied, and their variations were analyzed in conjunction with the antisite defects. Seebeck coefficient and electrical resistivity versus inverse thickness showed a linear relationship, and the effective mean free path was found to be 3150$\AA$. No phase transformation and composition change were observed after annealing treatment, but carrier mobility increased due to grain growth. Carrier concentration decreased considerably due to reduction of the antisite defects, so that electrical conductivity decreased and Seebeck coefficient increased. When annealed at 473 K for 1 hr, Seebeck coefficient and electrical conductivity were $160\mu$V/K and 610 $W^{-1}$ $cm^{ -1}$, respectively. Therefore, the thermoelectric quality factor were also enhanced to be $16\mu$W/cm $K^2$.>.