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http://dx.doi.org/10.5370/KIEE.2016.65.10.1697

The Effect of Sb2O3 Additive on the Electrical Properties of ZnO Varistor  

Kim, Yong-Hyuk (Dept. of Electrical Engineering, Gachon University)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.65, no.10, 2016 , pp. 1697-1701 More about this Journal
Abstract
The leakage conduction and critical voltage characteristic of ZnO ceramic were investigated as a function of $Sb_2O_3$ concentration. Leakage conduction in the ohmic region increased with increasing $Sb_2O_3$ concentration and was attributed to the potential barrier height. The nonlinear coefficient increased with an increasing amount of $Sb_2O_3$. It was found that increases in the apparent critical voltages were associated with the lowered donor concentration in the grain boundary of between two ZnO grains. And the decrease of donor concentration on doping with $Sb_2O_3$ additive was attributed to the lowered capacitance in the grain boundary layer.
Keywords
ZnO varistor; Grain boundary; Ohmic region; Non ohmic region; Critical voltage; Nonlinear coefficient;
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