• Journal of the Korean Society of Food Culture
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• v.22 no.2
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• pp.246-253
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• 2007

Mineral and volatile flavor compounds of Pimpinella brochycarpa N., a perennial Korean medicinal plant of the Umbelliferae family, were analyzed by inductively coupled plasma-atomic emission spectroscopy (ICP-AES) and simultaneous steam distillation extract (SDE)-gas chromatography mass spectrometry (GC/MS), head space solid phase micro-extraction (HS-SPME)-GC/MS. Mineral contents of the stalks and leaves were compared and the flavor patterns of the fresh and the shady air-dried samples were obtained by the electronic nose (EN) with 6 metal oxide sensors. Principal component analysis (PCA) was carried out using the data obtained from EN. The 1st principal values of the fresh samples have + values and the shady air-dried have - values. The essential oil extracted from the fresh and the shady air-dried by SDE method contain 58 and 31 flavor compounds. When HS-SPME method with CAR/PDMS fiber and PDMS fiber were used, 34 and 21 flavor compounds. The principal volatile components of Pimpinella brachycarpa N. were ${\alpha}$-selinene, germacrene D, and myrcene.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.11-17
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• 2000

We investigated the growth of InGaN/GaN multiple quantum wells (MQWs) structures which emit blue light. The samples were grown in a low pressure metalorganic chemical vapor deposition system. We examined InGaN/GaN MQWs by varying growth temperatures and thicknesses of InGaN well and GaN barrier layers in MQWs. Especially, the thickness of GaN barrier in InGaN/GaN MQWs was found to severely affect the interfacial abruptness between InGaN well and GaN barrier layers. The higher order satellite peaks in the high resolution x-ray diffraction spectra and the high resolution cross sectional transmission electron microscope image of MQW structrues revealed that the interface between InGaN and GaN layers was very abrupt. Room-temperature photoluminescence spectra also showed a blue emission from InGaN/GaN MQWs at the wavelength of 463.5nm with a narrow full width at half maximum of 72.6meV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.10-14
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• 2008

We synthesized GaN nanowires with high quality using the vapor phase epitaxy technique. The GaN nanowires were obtained at a temperature of $950^{\circ}C$. The Ar and $NH_3$ flow rates were 1000 sccm and 50 sccm, respectively. The shape of the GaN nanowires was confirmed through FESEM analysis. We were able to conclude that the GaN nanowires synthesized via vapor-solid (VLS) mechanism when the source was closed to the substrate. On the other side, the VS mechanism changed to vapor-liquid-solid (VLS) as the source and the substrate became more distant. Therefore, we can suggest that the large amount of Ga source from initial growth interrupt the role of catalyst on the substrate.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.96-97
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• 2015

확산을 이용한 표면 개질법인 Thermo-Reactive Diffusion(TRD) 기술 기반 2단 표면처리를 통해 고경도의 Nb(C,N) 코팅층을 고탄소 베어링강인 JIS-SUJ2강에 형성시켰다. 2단 표면처리는 암모니아 가스 질화와 분말 확산 코팅법으로 구성된 2step 열처리이다. 본 연구에서는 가스질화 화합물층의 두께가 코팅층 성장 거동에 어떤 영향을 미치는지 알아보기 위해서 $550^{\circ}C$에서 3, 6시간 암모니아 가스 분위기에서 가스질화를 실시하고, $900^{\circ}C$에서 3시간 분말 확산법을 통해 표면 코팅층을 형성하였다. 생성된 코팅층의 형상과 두께 측정을 광학현미경(OM) 과 주자전자현미경(SEM)을 통해 한 결과, 가스 질화는 약 10uu와 16um, 최종 코팅층은 약 정도 생성이 되었음을 확인하였다. 코팅층의 성분 분석은, EDS, FE-EPMA, XPS 분석을 통해서 실시하였다. EDS와 FE-EPMA 원소 mapping을 통해 모재에 비해 높은 농도의 Nb, C 그리고 N이 코팅층 내부에 존재함을 확인하였다. XPS분석의 결합에너지 peak를 통해 NbC, NbN 그리고 Nb-oxide가 생성이 되었음을 분석하였다. 생성된 코팅층의 경도는 low mode에서 10회 측정한 후 평균값을 내었고, 각각 Hv이었다.

• Journal of Pharmaceutical Investigation
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• v.9 no.4
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• pp.1-7
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• 1979

The analytical method of phenobarbital and mephobarbital in the pharmaceutical preparation were investigated by the partition chromatographic method. The influence of 13 kinds of excipients and various kinds of ingredients such as 8 kinds of antipyretics and 5 kinds of antacids on the partition chromatographic analysis of phenobarbital and mephobarbital in the preparation were investigated. The results were not affected by materials with the exception of caffeine, aspirin and sulpyrin.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.5
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• pp.17-26
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• 2021

It is challenging to estimate the fatigue life of construction equipment consisting of a welded joint using field structure test owing to the uncertainty of the S-N curve. IIW recommends different S-N curves for various welded joint types. However, there is no way to define an appropriate curve considering complex design shape and strain gauge characteristics. This paper proposes an equivalent S-N curve method based on the relationship between IIW effective notch stress and virtual stress using finite element analysis. Moreover, a case study was conducted for the excavator fuel tank. The proposed method is expected to enhance accuracy and consistency in calculating the fatigue life for the welded structure of construction equipment.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.21-21
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• 2014

$CrN/Al_2O_3/CrN$ 다층 코팅을 HIPIMS와 ALD간 하이브리드 코팅법을 통해 형성하였다. ALD를 통해 CrN 층에 도입한 $Al2O_3$층의 두께 및 위치가 $CrN/Al_2O_3/CrN$ 다층 코팅층의 미세구조, 표면 거칠기, 기계적 특성 및 화학적 특성에 미치는 영향에 대해 조사하였다. 전체 공정시간은 거의 변화시키지 않고도, ALD를 이용한 $Al2O_3$층의 삽입에 의하여 기계적/화학적 특성이 크게 개선될 수 있음을 확인하였으며, 개선된 특성에 대한 원인에 대해 조사하였다.

• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Journal of the Korean Chemical Society
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• v.38 no.10
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• pp.726-733
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• 1994

Supercritical fluid extraction (SFE) followed by gas chromatographic separation and mass spectrometric (MS) detection were used in rapid analysis of polycyclic aromatic hydrocarbons (PAH's) in air particulate material extracted for 30 min with 10 ml of supercritical $N_2O$ without another sample preparation step. Two samples, urban dust in Seoul area and a certified air particulate reference material 1649 supplied by the NBS (National Bureau of Standards), were processed for the purpose of evaluating extraction and analysis methods. As a result, the quantitative recovery of PAH's in the SFE method was relatively lower than conventional organic solvent extraction methods, but reproducibility was resonable, and analysis time was reduced remarkably. The method has proved to be suitable for monitoring of PAH's in air particulate material.

• Journal of the Korean Chemical Society
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• v.34 no.3
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• pp.260-266
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• 1990

The electrochemical behavior of N-methyl-2-amino-l-cyclopentene-l-dithiocarboxylic acid $(N-CH_3 acdc) and 2-amino-l-cyclopentene-l-dithiomethyl ester (S-CH_3 acdc) in DMF have been investigated by the use of polarography, cyclic voltammetry and coulometry. The dimer of N-CH_3 acdc is further oxidized at +0.98 V via 2-electron process to produce free sulfur atom and cyclization product. The ring formation between two dithio group occurs along with the elimination of one sulfur atom. The elimination of sulfur atom occurs via two electron oxidation process at + 0.98 V vs. Ag/AgCl electrode. However, the cyclization does not occur in the S-CH_3$ acdc.