Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Growth of Blue Light Emitting InGaN/GaN MQWs by Metalorganic Chemical Vapor Deposition

유기금속화학기상증착법을 이용한 청색 발광 InGaN/GaN MQWs의 성장에 관한 연구

  • Kim, Dong-Joon (Department of Materials Science & Engineering and Center for Optoelectronic Materials Research, Kwangju Institute of Science & Technology) ;
  • Moon, Yong-Tae (Department of Materials Science & Engineering and Center for Optoelectronic Materials Research, Kwangju Institute of Science & Technology) ;
  • Song, Keun-Man (Department of Materials Science & Engineering and Center for Optoelectronic Materials Research, Kwangju Institute of Science & Technology) ;
  • Park, Seong-Ju (Department of Materials Science & Engineering and Center for Optoelectronic Materials Research, Kwangju Institute of Science & Technology)
  • 김동준 (光州科學技術院 新素材工學科) ;
  • 문용태 (光州科學技術院 新素材工學科) ;
  • 송근만 (光州科學技術院 新素材工學科) ;
  • 박성주 (光州科學技術院 新素材工學科)
  • Published : 2000.12.01
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Abstract

We investigated the growth of InGaN/GaN multiple quantum wells (MQWs) structures which emit blue light. The samples were grown in a low pressure metalorganic chemical vapor deposition system. We examined InGaN/GaN MQWs by varying growth temperatures and thicknesses of InGaN well and GaN barrier layers in MQWs. Especially, the thickness of GaN barrier in InGaN/GaN MQWs was found to severely affect the interfacial abruptness between InGaN well and GaN barrier layers. The higher order satellite peaks in the high resolution x-ray diffraction spectra and the high resolution cross sectional transmission electron microscope image of MQW structrues revealed that the interface between InGaN and GaN layers was very abrupt. Room-temperature photoluminescence spectra also showed a blue emission from InGaN/GaN MQWs at the wavelength of 463.5nm with a narrow full width at half maximum of 72.6meV.

저압 유기금속화학기상증착법을 이용하여 효율적인 청색 발광을 하는 InGaN/GaN multiple quantum wells(MQWs)을 성장시키고, InGaN/GaN MQWs의 광학적 및 계면 구조 특성을 고찰하였다. 보다 효율적인 청색 발광을 하는 InGaN/GaN MQWs을 성장시키기 위하여, MQWs의 성장온도 및 InGaN 우물층과 GaN 장벽층의 두께를 변화시켜 최적 조건을 확립하였다. 특히, GaN 장벽층의 두께 변화가 InGaN 우물층과 GaN 장벽층간 계면의 구조적 특성에 지대한 영향을 미침을 확인하였다. X-ray 회절분석결과와 고분해능의 투과전자현미경 사진 분석으로부터 MQW 구조의 InGaN 우물층과 GaN 장벽층간의 계면이 매우 급준함을 발견할 수 있었다. 또한, 상온 PL 스펙트럼에서 72.6meV의 매우 좁은 반치폭을 갖는 단일 피크가 463.5nm에서 확인되었다.

Keywords

References

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